The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory

The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory Cheol Seong Hwang, Hyeon Woo Park, Won-Tae Koo, Dong Ik Suh, Seungyong Byun, and 10 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5463376/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract The capacitance behavior of the ultra-thin ferroelectric/dielectric (FE/DE) stacked devices in the nanoscale cylindrical structure deviated from the negative capacitance (NC) state to unpredicted other states. This work confirmed that the ultra-thin (2.0–3.0 nm) FE Hf 0.33 Zr 0.67 O 2 layer could have a positive capacitance, infinite capacitance, or NC by controlling the thickness of the stacked DE Al 2 O 3 layer thickness (1.0–3.0 nm). Detailed analytical model and numerical simulation based on phase-field modeling, considering the FE polarization bound charge compensation by the injected/trapped interfacial carriers and the geometry effect of the cylinder, precisely identified the change of the inhomogeneous stray field energy, which played a crucial role in determining the capacitance state. Further analysis of the models revealed that the capacitance variation is strongly correlated to the extent of the initial polarization charge compensation of the ferroelectric domains. This work provides guidelines for developing the next-generation capacitors in dynamic random access memory. Physical sciences/Materials science/Materials for devices/Electronic devices Physical sciences/Nanoscience and technology/Nanoscale devices/Electronic devices DRAM capacitor negative capacitance infinite capacitance charge injection phase-field modeling Full Text Additional Declarations There is NO Competing Interest. Supplementary Files PCICNCNMSI.docx The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-5463376","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":389022499,"identity":"caa2da60-2d29-48d6-bd26-fa1dcfe5c8f4","order_by":0,"name":"Cheol Seong 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