A comparative estimation on the property’s performance and applications of ZnO thin fabricated via ALD

In this study we investigated the material properties of ZnO thin film of ≈ 300 nm thickness, grown on glass and silicon substrates by using atomic layer deposition (ALD) technique. Structural characterization was carried out using incident X-ray diffraction pattern. The microstructural evolution was accompanied by the grain size measurement. A key element of this study was to prove that it is practically impossible to attribute the optical energy gap E g and the refractive index n dependence to any typical thin film material because these parameters depend on the deposition condition and the program used for determination. Two different values (3.32 and 3.36 eV) for the optical energy gap E g , and (2.29–2.27) for the refractive index, have been reported and analyzed for ZnO thin film due to the type of behavior of absorbance, transmittance and reflectance. The dielectric characteristics and the AC conductivity were also measured at temperature ranging from (303–413 K 0 ) and at frequency range of (1 K Hz to 1 MH). The data of the AC conductivity was analyzed by the universal power law. It was found that the corelated barrier hopping model (CBH) model is the predominate conduction mechanism. This article contains recent advances in the modified ZnO metal oxide prepared by (ALD), for efficient approach for sensor device fabrication depending mainly on the estimated parameters.