Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation

Copper indium gallium diselenide, Cu(In,Ga)Se2, thin-film of about 1.2 μm has been deposited on Mo coated soda lime glass by thermal co-evaporation of Cu, In, Ga, and Se sources. The thin film CIGS was characterized by energy dispersive spectroscopy (EDS) and identified the elemental composition of Cu, In, Ga and Se in the film. A CIGS device was completed by the successive deposition of multiple layers; SLG/Mo/CIGS/CdS/ZnO/ITO which yielded the efficiency of 11%. External spectroscopic ellipsometry (ex-situ SE) was performed on the completed device and the device analysis was performed. Starting with the parameterized complex dielectric functions of the individual component layers, SE analysis was performed using a step-wise procedure that ranks the fitting parameters according to their ability to reduce the mean square error (MSE) of the fit. The resulting layer thicknesses and dielectric functions were used to simulate the external quantum efficiency (EQE) of the device assuming complete active layer collection. Electronic losses were identified by comparison of simulated EQE with the measured EQE. The ultimate goal of this work is the optimization of narrow band-gap CIGS-related solar cells for the bottom layer in tandem devices.