Technological and Electrophysical Characteristics of Receiving Detectors Based on Si (Ge), Si (Li) and Si (Au) Structures With Scintilator Semiconductor

Technological and Electrophysical Characteristics of Receiving Detectors Based on Si (Ge), Si (Li) and Si (Au) Structures With Scintilator Semiconductor | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Technological and Electrophysical Characteristics of Receiving Detectors Based on Si (Ge), Si (Li) and Si (Au) Structures With Scintilator Semiconductor Radjapov S. A, Maripov I. This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4358160/v2 This work is licensed under a CC BY 4.0 License Status: Posted Version 2 posted You are reading this latest preprint version Show more versions Abstract The scientific significance of the research results is that new technological processes for the preparation of semiconductor detectors based on the Si(Li) p-i-n structure with nuclear radiation were identifed and their electrophysical characteristics were determined. These results are explained by the fact that they are of great importance in the practical application of various semiconductor devices. The practical significance of the research results is the development and implementation of Si(Li) p-i-n structural detectors based on semiconductor monocrystalline silicon. Hard Condensed-matter Physics detector silicon ionization gamma quantum spectrum charge electron crystal ionization chamber recombination electric field Full Text Additional Declarations The authors declare potential competing interests as follows: The scientific significance of the research results is that new technological processes for the preparation of semiconductor detectors based on the Si(Li) p-i-n structure with nuclear radiation were seen and their electrophysical characteristics were determined. Such results are explained by the fact that they are of great importance in the practical application of various semiconductor devices. The practical significance of the research results is the development and implementation of Si(Li) p-i-n structural detectors based on semiconductor monocrystalline silicon. Cite Share Download PDF Status: Posted Version 2 posted You are reading this latest preprint version Show more versions Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4358160","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":298271688,"identity":"37af3b50-7dae-4b89-b52f-7b69a39530c9","order_by":0,"name":"Radjapov S. 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