Thermal enhancement of GaN Schottky Diodes Annealed at 600 °C for High Power and High Temperature RF Applications

Thermal enhancement of GaN Schottky Diodes Annealed at 600 °C for High Power and High Temperature RF Applications | Authorea try { document.documentElement.classList.add('js'); } catch (e) { } var _gaq = _gaq || []; _gaq.push(['_setAccount', 'G-8VDV14Y67G']); _gaq.push(['_trackPageview']); (function() { var ga = document.createElement('script'); ga.type = 'text/javascript'; ga.async = true; ga.src = ('https:' == document.location.protocol ? 'https://ssl' : 'http://www') + '.google-analytics.com/ga.js'; var s = document.getElementsByTagName('script')[0]; s.parentNode.insertBefore(ga, s); })(); Skip to main content Preprints Collections Wiley Open Research IET Open Research Ecological Society of Japan All Collections About About Authorea FAQs Contact Us Quick Search anywhere Search for preprint articles, keywords, etc. Search Search ADVANCED SEARCH SCROLL Electronics Letters This is a preprint and has not been peer reviewed. Data may be preliminary. 13 March 2025 V1 Latest version Share on Thermal enhancement of GaN Schottky Diodes Annealed at 600 °C for High Power and High Temperature RF Applications Authors : Beatriz Orfao 0000-0003-4138-9537 [email protected] , Amir Al Abdallah 0000-0002-0935-031X , Hugo Bouillaud , Guillaume Ducournau , Yannick Roelens , Malek Zegaoui , and Mohammed Zaknoune Authors Info & Affiliations https://doi.org/10.22541/au.174184766.63157572/v1 336 views 291 downloads Contents Abstract Supplementary Material Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract In this paper, we report the investigation of the thermal enhancement and the behavior of GaN Schottky diodes grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates for RF power applications and their potential to operate under extreme temperature. The Schottky barrier diodes show a Schottky barrier height (ϕB) close to 0.93 eV and an ideality factor (η) near unity with 1.03. Pt/Au anodes annealed at 500°C and 600ºC show an improvement of the electrical characteristics and a breakdown voltage as high as 130 V for a drift layer thickness of 1 µm and doping of 10^16 cm-3. Supplementary Material File (electronics+letters+beatriz orfao.pdf) Download 869.34 KB Information & Authors Information Version history V1 Version 1 13 March 2025 Copyright This work is licensed under a Non Exclusive No Reuse License. Collection Electronics Letters Keywords frequency multipliers microfabrication rapid thermal processing schottky diodes semiconductor device breakdown wide band gap semiconductors Authors Affiliations Beatriz Orfao 0000-0003-4138-9537 [email protected] Institut d'Electronique de Microelectronique et de Nanotechnologie View all articles by this author Amir Al Abdallah 0000-0002-0935-031X Institut d'Electronique de Microelectronique et de Nanotechnologie View all articles by this author Hugo Bouillaud Institut d'Electronique de Microelectronique et de Nanotechnologie View all articles by this author Guillaume Ducournau Université de Lille View all articles by this author Yannick Roelens Universite de Lille View all articles by this author Malek Zegaoui Institut de Recherche sur les Composants Logiciels et Materiels pour l'Information et la Communication Avancee View all articles by this author Mohammed Zaknoune Institut d'Electronique de Microelectronique et de Nanotechnologie View all articles by this author Metrics & Citations Metrics Article Usage 336 views 291 downloads .FvxKWukQNSOunydq8rnd { width: 100px; } Citations Download citation Beatriz Orfao, Amir Al Abdallah, Hugo Bouillaud, et al. Thermal enhancement of GaN Schottky Diodes Annealed at 600 °C for High Power and High Temperature RF Applications. Authorea . 13 March 2025. DOI: https://doi.org/10.22541/au.174184766.63157572/v1 If you have the appropriate software installed, you can download article citation data to the citation manager of your choice. Simply select your manager software from the list below and click Download. For more information or tips please see 'Downloading to a citation manager' in the Help menu . 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