Enhanced RF/Analog Performances of Inverted T-shaped Stack Oxide GaAs FinFET

Enhanced RF/Analog Performances of Inverted T-shaped Stack Oxide GaAs FinFET | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Enhanced RF/Analog Performances of Inverted T-shaped Stack Oxide GaAs FinFET Aprajita Kumari, Rajashree Das This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7844736/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract This paper proposes a new FinFET device that has an inverted T shaped stack oxide with GaAs as a fin material. The device is designed in such a way that it has enhanced analog performances in terms of transconductance, intrinsic gain, total gate capacitance (Cgg). Primarily, the performance of the proposed FinFET is compared with the conventional Silicon based FinFET in terms of on current (I ON ), OFF current (I OFF ) and the Subthreshold Swing (SS). The proposed device is also analysed for a wide range of temperature to study the stability and reliability. The different electrical parameters are analysed by varying different dimensional parameters such as gate length, fin width and fin materials. These enhancements collectively contribute to substantial gains in RF and analog operation, enabling higher frequency response, superior gain performance, and improved power efficiency. Ag FinFET T shape gate dielectrics GaAs Ag Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7844736","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":554760309,"identity":"6e7fd36e-c6c8-4378-af88-1eba5839aa60","order_by":0,"name":"Aprajita 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The device is designed in such a way that it has enhanced analog performances in terms of transconductance, intrinsic gain, total gate capacitance (Cgg). Primarily, the performance of the proposed FinFET is compared with the conventional Silicon based FinFET in terms of on current (I\u003csub\u003eON\u003c/sub\u003e), OFF current (I\u003csub\u003eOFF\u003c/sub\u003e) and the Subthreshold Swing (SS). The proposed device is also analysed for a wide range of temperature to study the stability and reliability. The different electrical parameters are analysed by varying different dimensional parameters such as gate length, fin width and fin materials. 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