Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process

Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process Andrii Sokolov, Xutong Wu, Conor Power, Mike Asker, Panagiotis Giounanlis, and 8 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7011435/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 23 Nov, 2025 Read the published version in Scientific Reports → Version 1 posted 8 You are reading this latest preprint version Abstract Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this article, we present our results on a calibrated model of a commercial nanostructure using the simulation tool Quantum TCAD, along with our experimental verification of all model predictions. We demonstrate here that quantum dots can be formed in the device channel by applying a combination of a common-mode voltage to the source and drain and a back gate voltage. Moreover, in this approach, the amount of quantum dots can be controlled and modified. Also, we report our results on an effective detuning of the energy levels in the quantum dots by varying the barrier gate voltages. Given the need and importance of scaling to larger numbers of qubits, we demonstrate here the feasibility of simulating and improving the design of quantum dot devices before their fabrication based on a commercial process. Physical sciences/Engineering Physical sciences/Materials science Physical sciences/Nanoscience and technology Physical sciences/Physics Full Text Additional Declarations No competing interests reported. Supplementary Files CommonModeControlSUPP.pdf Cite Share Download PDF Status: Published Journal Publication published 23 Nov, 2025 Read the published version in Scientific Reports → Version 1 posted Editorial decision: Revision requested 17 Sep, 2025 Reviews received at journal 24 Jul, 2025 Reviewers agreed at journal 15 Jul, 2025 Reviewers invited by journal 10 Jul, 2025 Editor invited by journal 07 Jul, 2025 Editor assigned by journal 07 Jul, 2025 Submission checks completed at journal 04 Jul, 2025 First submitted to journal 30 Jun, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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