Efficient and Self-Powered MoSSe/GeP p-n Diode Enabled by Perovskite Lead-Free Quantum Dots

Efficient and Self-Powered MoSSe/GeP p-n Diode Enabled by Perovskite Lead-Free Quantum Dots | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Efficient and Self-Powered MoSSe/GeP p-n Diode Enabled by Perovskite Lead-Free Quantum Dots ASIM MUHAMMAD, Pervez Muhammad Hamza, Rehmat Arslan, Kyung Ho Kim, and 7 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-8880499/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 9 You are reading this latest preprint version Abstract A residue-free interface and strong light-matter coupling are critical for high-performance 2D photodetectors. Here, a MoSSe/GeP heterostructure is fabricated using Elvacite pickup transfer, enabling a clean van der Waals junction and contamination-free electrical contacts. Structural (AFM) and spectroscopic (Raman and Raman mapping) analyses collectively demonstrate high crystalline quality, uniform layer thickness, and a chemically sharp interface, firmly establishing GeP and Janus MoSSe as complementary p- and n-type semiconductors. The pristine p-n junction device exhibits strong rectification (2.2 × 10 3 at V g = − 40 V). After sensitization with lead-free perovskite quantum dots ( λ em ≈ 510 nm), the QD-MoSSe/GeP heterostructure exhibits a pronounced built-in field-driven photocurrent of approximately 0.25 µA at zero bias, confirming efficient interfacial separation. QD integration enhances responsivity, detectivity, and EQE from 1.64 × 10 4 A W -1 , 3.55 × 10 13 Jones, and 2.36 × 10 4 % to 4.05 × 10 4 A W -1 , 7.6 × 10 13 Jones, and 1.41 × 10 5 %, respectively, at 455 nm, 5.53 mW cm -2 , and V ds = 1.5 V. Photoexcitation in the quantum-dot layer enables charge transfer into the MoSSe channel, while long-lived trapped charges induce electrostatic gating, leading to pronounced photogating-assisted gain. In addition, under zero-bias operation, the QD-sensitized device achieves an EQE of 8.4 × 10 2 %, responsivity of 8.75 A W -1 , and detectivity of 0.56 × 10 10 Jones, confirming self-powered functionality. These enhancements arise from spectral resonance with QD emission, efficient QD-to-MoSSe charge transfer, and reduced recombination. This study demonstrates that clean pickup assembly combined with QD sensitization provides a scalable pathway toward high-sensitivity, broadband (365–940 nm), and stable 2D optoelectronic devices. Hybrid architecture QD integration van der Waals heterostructure Photogating mechanism Self-powered operation Broadband response Full Text Additional Declarations No competing interests reported. Supplementary Files SupplementryInformation20260214.docx Cite Share Download PDF Status: Under Review Version 1 posted Editorial decision: Revision requested 30 Mar, 2026 Reviews received at journal 30 Mar, 2026 Reviews received at journal 17 Mar, 2026 Reviewers agreed at journal 25 Feb, 2026 Reviewers agreed at journal 25 Feb, 2026 Reviewers invited by journal 25 Feb, 2026 Editor assigned by journal 19 Feb, 2026 Submission checks completed at journal 18 Feb, 2026 First submitted to journal 14 Feb, 2026 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-8880499","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":597205262,"identity":"580d605a-a855-425b-b94d-060047c62142","order_by":0,"name":"ASIM MUHAMMAD","email":"","orcid":"","institution":"Sejong University","correspondingAuthor":false,"prefix":"","firstName":"ASIM","middleName":"","lastName":"MUHAMMAD","suffix":""},{"id":597205263,"identity":"db49640f-1a38-42ad-b991-6074f746443e","order_by":1,"name":"Pervez Muhammad Hamza","email":"","orcid":"","institution":"Sejong 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Dots","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"advanced-composites-and-hybrid-materials","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"achm","sideBox":"Learn more about [Advanced Composites and Hybrid Materials](https://link.springer.com/journal/42114)","snPcode":"42114","submissionUrl":"https://submission.nature.com/new-submission/42114/3","title":"Advanced Composites and Hybrid Materials","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"Hybrid architecture, QD integration, van der Waals heterostructure, Photogating mechanism, Self-powered operation, Broadband response","lastPublishedDoi":"10.21203/rs.3.rs-8880499/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-8880499/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eA residue-free interface and strong light-matter coupling are critical for high-performance 2D photodetectors. Here, a MoSSe/GeP heterostructure is fabricated using Elvacite pickup transfer, enabling a clean van der Waals junction and contamination-free electrical contacts. Structural (AFM) and spectroscopic (Raman and Raman mapping) analyses collectively demonstrate high crystalline quality, uniform layer thickness, and a chemically sharp interface, firmly establishing GeP and Janus MoSSe as complementary p- and n-type semiconductors. The pristine p-n junction device exhibits strong rectification (2.2 \u0026times; 10\u003csup\u003e3\u003c/sup\u003e at \u003cem\u003eV\u003c/em\u003e\u003csub\u003e\u003cem\u003eg\u003c/em\u003e\u003c/sub\u003e\u0026thinsp;=\u0026thinsp;\u0026minus;\u0026thinsp;40 V). After sensitization with lead-free perovskite quantum dots (\u003cem\u003eλ\u003c/em\u003e\u003csub\u003e\u003cem\u003eem\u003c/em\u003e\u003c/sub\u003e\u0026thinsp;\u0026asymp;\u0026thinsp;510 nm), the QD-MoSSe/GeP heterostructure exhibits a pronounced built-in field-driven photocurrent of approximately 0.25 \u0026micro;A at zero bias, confirming efficient interfacial separation. QD integration enhances responsivity, detectivity, and \u003cem\u003eEQE\u003c/em\u003e from 1.64 \u0026times; 10\u003csup\u003e4\u003c/sup\u003e A W\u003csup\u003e-1\u003c/sup\u003e, 3.55 \u0026times; 10\u003csup\u003e13\u003c/sup\u003e Jones, and 2.36 \u0026times; 10\u003csup\u003e4\u003c/sup\u003e% to 4.05 \u0026times; 10\u003csup\u003e4\u003c/sup\u003e A W\u003csup\u003e-1\u003c/sup\u003e, 7.6 \u0026times; 10\u003csup\u003e13\u003c/sup\u003e Jones, and 1.41 \u0026times; 10\u003csup\u003e5\u003c/sup\u003e%, respectively, at 455 nm, 5.53 mW cm\u003csup\u003e-2\u003c/sup\u003e, and \u003cem\u003eV\u003c/em\u003e\u003csub\u003e\u003cem\u003eds\u003c/em\u003e\u003c/sub\u003e = 1.5 V. Photoexcitation in the quantum-dot layer enables charge transfer into the MoSSe channel, while long-lived trapped charges induce electrostatic gating, leading to pronounced photogating-assisted gain. In addition, under zero-bias operation, the QD-sensitized device achieves an \u003cem\u003eEQE\u003c/em\u003e of 8.4 \u0026times; 10\u003csup\u003e2\u003c/sup\u003e%, responsivity of 8.75 A W\u003csup\u003e-1\u003c/sup\u003e, and detectivity of 0.56 \u0026times; 10\u003csup\u003e10\u003c/sup\u003e Jones, confirming self-powered functionality. These enhancements arise from spectral resonance with QD emission, efficient QD-to-MoSSe charge transfer, and reduced recombination. This study demonstrates that clean pickup assembly combined with QD sensitization provides a scalable pathway toward high-sensitivity, broadband (365\u0026ndash;940 nm), and stable 2D optoelectronic devices.\u003c/p\u003e","manuscriptTitle":"Efficient and Self-Powered MoSSe/GeP p-n Diode Enabled by Perovskite Lead-Free Quantum Dots","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2026-02-27 07:12:06","doi":"10.21203/rs.3.rs-8880499/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"Revision requested","date":"2026-03-30T11:20:04+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2026-03-30T09:42:14+00:00","index":"hide","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2026-03-18T03:50:57+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"224673596993437499791090716146455253188","date":"2026-02-26T00:18:40+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"259404417292978934291516738654362170715","date":"2026-02-25T15:33:44+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2026-02-25T10:35:43+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2026-02-20T01:50:18+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2026-02-18T10:21:42+00:00","index":"","fulltext":""},{"type":"submitted","content":"Advanced Composites and Hybrid Materials","date":"2026-02-14T13:53:08+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"advanced-composites-and-hybrid-materials","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"achm","sideBox":"Learn more about [Advanced Composites and Hybrid Materials](https://link.springer.com/journal/42114)","snPcode":"42114","submissionUrl":"https://submission.nature.com/new-submission/42114/3","title":"Advanced Composites and Hybrid Materials","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"2a294d8a-fcba-415b-89bc-cb0a93e77e51","owner":[],"postedDate":"February 27th, 2026","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[],"tags":[],"updatedAt":"2026-05-15T11:53:09+00:00","versionOfRecord":[],"versionCreatedAt":"2026-02-27 07:12:06","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-8880499","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-8880499","identity":"rs-8880499","version":["v1"]},"buildId":"XKTyCvWXoU3ODBz1xrDgd","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}