A High Sensitivity Novel Gas Sensor for Ethanol Sensing Using Gate Stack Junction-less Gate-All-Around (GS-JL-GAA) MOSFET for Industrial Application

A High Sensitivity Novel Gas Sensor for Ethanol Sensing Using Gate Stack Junction-less Gate-All-Around (GS-JL-GAA) MOSFET for Industrial Application | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article A High Sensitivity Novel Gas Sensor for Ethanol Sensing Using Gate Stack Junction-less Gate-All-Around (GS-JL-GAA) MOSFET for Industrial Application Abhinav Gupta, Akanksha Gupta, Rishabh Awasthi, Manish Rai This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7645383/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Gas sensors have gain attention with the technological advancement as they are widely used in industries, health care, agriculture and environmental monitoring. The MOSFET based sensor are the mostly preferred in the sensing application due to their reduced power consumption, lower cost and higher sensitivity. The Nano wire with gate stacked gate all around configuration is estimated to dominate the modern on chip transistors with lower leakage current. The inhalation of ethanol vapor can cause several health risks i.e. respiratory irritation and intoxication. In this study, we have investigated a novel ethanol gas sensor using gate stack Junction-less Gate All Around (GS-JL-GAA) MOSFET with varying ethanol gas concentration as 1 ppm, 10 ppm, 50 ppm and 100 ppm. The operation of proposed gas sensor will be based on the change in the work function of palladium gate electrode with the variation in the concentration of ethanol gas. The ethanol vapor dehydrogenation takes place in presence of palladium catalyst at room temperature. Due to this the released hydrogen molecule forms a dipole at the palladium oxide interface and the work function of gate electrode alters. A rigorous simulation study on electrostatic, analog, radio frequency and linearity analysis of GS-JL-GAA MOSFET has been performed using ATLAS device simulator. It is observed that with the variation of ethanol gas concentration, the characteristics of GS-JL-GAA MOSFET varies. Further, the sensitivity of all these parameters has been investigated to access the impact of gas concentration on GS-JL-GAA MOSFET based gas sensor. The result reveals that the proposed gas sensor exhibits superiority in terms of sensitivity and improved sensor performance. Junction-less Gate All Around High-k Gas sensor Electrostatic performance Sensitivity Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7645383","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":551757277,"identity":"ce2d83c2-d029-485b-8877-6f8f96bc5b18","order_by":0,"name":"Abhinav 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Application","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":true,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Junction-less, Gate All Around, High-k, Gas sensor, Electrostatic performance, Sensitivity","lastPublishedDoi":"10.21203/rs.3.rs-7645383/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7645383/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eGas sensors have gain attention with the technological advancement as they are widely used in industries, health care, agriculture and environmental monitoring. The MOSFET based sensor are the mostly preferred in the sensing application due to their reduced power consumption, lower cost and higher sensitivity. The Nano wire with gate stacked gate all around configuration is estimated to dominate the modern on chip transistors with lower leakage current. The inhalation of ethanol vapor can cause several health risks i.e. respiratory irritation and intoxication. In this study, we have investigated a novel ethanol gas sensor using gate stack Junction-less Gate All Around (GS-JL-GAA) MOSFET with varying ethanol gas concentration as 1 ppm, 10 ppm, 50 ppm and 100 ppm. The operation of proposed gas sensor will be based on the change in the work function of palladium gate electrode with the variation in the concentration of ethanol gas. The ethanol vapor dehydrogenation takes place in presence of palladium catalyst at room temperature. Due to this the released hydrogen molecule forms a dipole at the palladium oxide interface and the work function of gate electrode alters. A rigorous simulation study on electrostatic, analog, radio frequency and linearity analysis of GS-JL-GAA MOSFET has been performed using ATLAS device simulator. It is observed that with the variation of ethanol gas concentration, the characteristics of GS-JL-GAA MOSFET varies. Further, the sensitivity of all these parameters has been investigated to access the impact of gas concentration on GS-JL-GAA MOSFET based gas sensor. The result reveals that the proposed gas sensor exhibits superiority in terms of sensitivity and improved sensor performance.\u003c/p\u003e\u003cp\u003e\u003c/p\u003e","manuscriptTitle":"A High Sensitivity Novel Gas Sensor for Ethanol Sensing Using Gate Stack Junction-less Gate-All-Around (GS-JL-GAA) MOSFET for Industrial Application","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-12-01 06:08:41","doi":"10.21203/rs.3.rs-7645383/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"c52fad9f-bd74-4242-b03f-fe160380538c","owner":[],"postedDate":"December 1st, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2025-12-26T06:39:01+00:00","versionOfRecord":[],"versionCreatedAt":"2025-12-01 06:08:41","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7645383","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7645383","identity":"rs-7645383","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}