Structural, Optical and Electrical Properties of CdSe:Bi thin Films by Magnetron Co-sputtering

Structural, Optical and Electrical Properties of CdSe:Bi thin Films by Magnetron Co-sputtering | Authorea try { document.documentElement.classList.add('js'); } catch (e) { } var _gaq = _gaq || []; _gaq.push(['_setAccount', 'G-8VDV14Y67G']); _gaq.push(['_trackPageview']); (function() { var ga = document.createElement('script'); ga.type = 'text/javascript'; ga.async = true; ga.src = ('https:' == document.location.protocol ? 'https://ssl' : 'http://www') + '.google-analytics.com/ga.js'; var s = document.getElementsByTagName('script')[0]; s.parentNode.insertBefore(ga, s); })(); Skip to main content Preprints Collections Wiley Open Research IET Open Research Ecological Society of Japan All Collections About About Authorea FAQs Contact Us Quick Search anywhere Search for preprint articles, keywords, etc. Search Search ADVANCED SEARCH SCROLL This is a preprint and has not been peer reviewed. Data may be preliminary. 7 March 2025 V1 Latest version Share on Structural, Optical and Electrical Properties of CdSe:Bi thin Films by Magnetron Co-sputtering Authors : Yaoran Dou 0009-0003-7029-8690 , Xi-Lin Cui Jian jin , and Guang-Rui Gu [email protected] Authors Info & Affiliations https://doi.org/10.22541/au.174137597.73678168/v1 173 views 119 downloads Contents Abstract Introduction Experimental details Results and discussion Conclusions Supplementary Material References Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract Bi doped CdSe (CdSe:Bi) films were successfully deposited on glass and Si(111) substrates by radio frequency (RF) and direct current (DC) co-sputtering. The films were characterized by X-ray diffration (XRD), energy-dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), ultraviolet-visible-near-infrared (UV-Vis-NIR) spectroscopy and the hall effect tester (HET). The diffraction peaks associated with elemental Bi are not detected in the XRD patterns. However, the intensity of the diffraction peaks of CdSe:Bi films significantly increases. The EDX analysis confirms the presence of Bi in all samples. As the Bi content increases, the transmittance of the CdSe:Bi films gradually decreases and the optical band gap first decreases then increases. The resistivity of CdSe:Bi films decreases by 1 to 2 orders of magnitude compared to undoped CdSe films, suggesting that Bi doping significantly enhance the electrical properties of CdSe. Dou, Yao-Ran; Jin, Jian, Cui Xi-Lin; Gu, Guang-Rui* Dou. YR. Author 1, Jin. J, Cui XL. Author 2 Yanbian Univ, Coll Sci, Dept Phys, Yanji 133002, Peoples R China E-mail: [email protected] Gu. GR. Author 3 Yanbian Univ, Coll Sci, Dept Phys, Yanji 133002, Peoples R China Keywords: magnetron sputtering, resistivities, CdSe:Bi films, transmittance Abstract : Bi doped CdSe (CdSe:Bi) films were successfully deposited on glass and Si(111) substrates by radio frequency (RF) and direct current (DC) co-sputtering. The films were characterized by X-ray diffration (XRD), energy-dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), ultraviolet-visible-near-infrared (UV-Vis-NIR) spectroscopy and the hall effect tester (HET). The diffraction peaks associated with elemental Bi are not detected in the XRD patterns. However, the intensity of the diffraction peaks of CdSe:Bi films significantly increases. The EDX analysis confirms the presence of Bi in all samples. As the Bi content increases, the transmittance of the CdSe:Bi films gradually decreases and the optical band gap first decreases then increases. The resistivity of CdSe:Bi films decreases by 1 to 2 orders of magnitude compared to undoped CdSe films, suggesting that Bi doping significantly enhance the electrical properties of CdSe. Introduction Cadmium selenide (CdSe) belongs to II-VI semiconductor compound. Since CdSe has a direct bandgap of about 1.74 eV and high light absorbance and conductivity, which has attracted great interests for its potential application on optoelectronic devices. [1-3] CdSe thin films were widely employed in photodetector, sensor devices, light emitting diodes, solar cells, and other optoelectronic devices. [4-10] To improve the performance of CdSe films in these applications, considerable research has focused on doping CdSe films in recent years. For example, the effect of varying indium (In) doping concentrations on CdSe thin films has been studied, with excellent optimal electrical properties observed when the In concentration was 1%. [11] In comparison to undoped CdSe, the bandgap of zinc (Zn)-doped CdSe decreased to 1.67 eV, enhancing its photovoltaic properties. [12] Undoped and Ni-Co-doped CdSe films were deposited on glass substrates using the chemical bath deposition (CBD) technique. The 4% Ni-4% Co dual-doped CdSe films exhibited the lowest optical bandgap and improved the efficiency of CdSe films for solar cell applications. [13] While a large number of studies have reported on undoped and metal-doped films, there are fewer studies on CdSe:Bi films. To improve the optoelectronic properties of CdSe thin films, Bi-doped CdSe films are prepared using radio frequency (RF) and direct current (DC) magnetron co-sputtering. In this work, we focus on the crystal structure, optical, and electrical properties of the films, aiming to achieve high transmittance and good electrical conductivity in the visible and near-infrared regions. Experimental details CdSe:Bi thin films were deposited on glass and Si(111) substrates (1 cm × 1 cm)at room temperature by radio frequency (RF) and direct current (DC) magnetron co-sputtering . The CdSe target (99.999%) was fixed on the RF magnetron device, while the Bi target (99.999%) was positioned on the DC magnetron device. To investigate the effect of Bi content, the RF power was maintained at 80 W, while the DC power was varied between 4 W and 10 W. The doping time was varied from 0 to 10 minutes in Ar (99.999%) ambient. The base pressure of the system was below 5 × 10⁴ Pa. The distance from the target to the substrate was 60 mm. The specific experimental parameters are shown in Table 1 . Table 1. Experimental parameters for the preparation of CdSe:Bi thin films Deposition parameters RF Power (W) DC Power (W) Sputtering pressure (Pa) Deposition temperature (K) Deposition time (min) Doping time (min) Varying the power 80 4- 10 1.6 300 30 10 Varying the time 4 0-2 The crystal structure of the films was characterized using an X-ray diffractometer (Shimadzu, XRD) and Cuα rays (λ = 1.5406Å). The optical transmission spectra of the films were recorded by using a UV-VIS-NIR spectrophotometer (Shimadzu, UV 3600) in the wavelength range of 300 to 2500 nm. The surface morphology and chemical composition of the films were characterized using a field emission scanning electron microscope (Hitachi UHR, SU 8010) and an energy dispersive X-ray spectrometer (EDX) connected to the field emission scanning electron microscope, respectively. Results and discussion Structural properties of CdSe:Bi thin films at different doping powers Figure 1 shows the XRD patterns of CdSe:Bi films at different doping powers. The patterns reveal that both undoped and Bi-doped films exhibit a unique diffraction peak near 25.4°, and all diffraction peaks correspond to the JCPDS card (#88-2346). The images demonstrate significant peak intensities, indicating that the samples are highly crystalline. With increasing doping power, the intensity of the CdSe:Bi (111) diffraction peaks decreases gradually suggesting that excessive Bi atoms aggregate at the grain boundaries, inhibiting the growth of the (111) phase. No diffraction peaks related to Bi are observed in the XRD patterns, this is due to Bi atoms substituting Cd atoms in the CdSe films, forming a solid solution, or doping at the grain boundaries of the CdSe films. [14] Figure 1. XRD images of CdSe:Bi thin films at different doping powers To further investigate the properties of CdSe:Bi thin films, Debye Scherrer’s formula, [15] Bragg’s law, and Williamson Smallman’s formula [16-18] were used to calculate the variations in grain size, lattice constants, lattice strain, and dislocation density of deposited CdSe :Bi thin films with different doping powers. Debye Scherrer’s formula: \(D=\frac{\text{Kλ}}{\beta\cos\theta}\) (1) Where D is the grain size, K is Scherrer’s constant (taken as 0.89), λ is the X-ray wavelength (taken as 1.54056 Å), β is the full width at half-maximum (FWHM), θ is the Bragg’s angle, and the lattice constants are calculated by using the following equations: \(d_{\text{hkl}}=\frac{a}{\sqrt{h^{2}+k^{2}+l^{2}}}\) (2) Where h, k, l are Miller indices, a is the lattice constant to be measured, and d is the crystal plane spacing. The lattice strain is obtained by substituting the lattice constant into the following equation: \(\varepsilon=\frac{\beta\cot\theta}{4}\) (3) Where β is the full width at half-maximum (FWHM), θ is the Bragg’s angle. [19] The dislocation density δ was calculated according to the Williamson Smallman formula. \(\delta=\frac{n}{D^{2}}\) (4) Where n = 1 is minimum dislocation density factor and D is the average microcrystal size. The specific data are presented in Table 2 , and the relationship curves between grain size, FWHM, and doping power are plotted, as shown in Figure 2 . It can be observed that as the doping power increases, the grain size gradually decreases from 66.02 nm to 55.94 nm. The decrease in grain size may be attributed to the increase in Bi content. As the doping power increases, the deposition rate also increases. A higher deposition rate leads to a decrease in the critical nucleation size and nucleation free energy. This is because the higher the deposition rate, the more nucleation sites on the substrate surface per unit time. [20] As a result, the grain size of the (111) phase significantly decreases with increasing Bi content. The specific trend can be observed in Figure 2. Table 2. Structural parameters of CdSe:Bi thin films at different doping powers DC power (W) 2θ (°) FWHM (°) Grainsize (nm) Average lattice constant (Å) Lattice strain (×10 -3 ) Dislocation density (nm -2 ) 0W 25.47 0.134 60.710 6.0510 2.59 2.7×10 -4 4W 25.51 0.122 66.020 6.0426 2.35 2.3×10 -4 6W 25.482 0.13 61.960 6.0497 2.51 2.6×10 -4 8W 25.491 0.137 58.791 6.0472 2.64 2.9×10 -4 10W 25.518 0.144 55.940 6.0411 2.78 3.2×10 -4 Figure 2 . Grain size and FWHM plots of CdSe:Bi thin films at different doping powers Figure 3. shows the EDX spectra of CdSe:Bi thin films at different doping powers. The spectra reveal the presence of Cd, Se, and Bi in the films, with no peaks corresponding to other elements, indicating high purity of the samples. At doping powers of 4W, 6W, 8W, and 10W, the relative concentrations of Bi atoms are 6.19 at.%, 8.74 at.%, 9.67 at.%, and 16.06 at.%, respectively. As the doping power increases, the concentration of Bi atoms rises, while the relative atomic concentrations of Cd and Se decrease, from 41.03 at.% to 39.04 at.% and 52.78 at.% to 44.9 at.%, respectively. It suggests that higher doping power results in greater incorporation of Bi into the films. Figure 3. EDX plots of CdSe:Bi thin films at different doping powers. (a) 4W; (b) 6W; (c) 8W; (d) 10W The surface morphology of the films was analyzed using field emission scanning electron microscopy (FESEM). Figure 4. displays the surface morphology of CdSe:Bi thin films at different doping powers. The image reveals numerous circular clusters formed as round particles on the film surface. As the grains of the CdSe films begin to merge after Bi doping, this phenomenon may be attributed to inhomogeneous nucleation occurring at high deposition rates, leading to cluster formation. [21] A similar phenomenon was observed in indium tin oxide (ITO) films, which exhibited a nanocluster morphology when deposited on glass substrates at low temperatures. [22] Figure 4. FESEM plots of CdSe:Bi thin films at different doping powers. (a) 4W; (b) 6W; (c) 8W; (d) 10W Optical properties of CdSe:Bi thin films at different doping powers Figure 5. shows the transmission (a) and absorbance (b) spectra of CdSe:Bi films prepared at different doping powers, the wavelength range of 200 nm to 2550 nm. In Figure 5(a), it can be observed that the transmission image curves of the films do not exhibit clear and smooth interference fringes, it indicates that the surface of the prepared films is not uniformly smooth, and the doping of Bi has an inverse effect on the transmittance of the films. The CdSe:Bi films exhibit near-complete opacity in the visible range (400 ~760 nm), with average transmittance in the infrared region (760 concentration increases, the absorption edge of the CdSe:Bi films shifts to longer wavelengths (redshift). According to the Burstein-Moss effect, [23] this redshift suggests a decrease in the optical bandgap. Figure 5. (b) shows that absorbance increases with higher Bi doping concentrations, This indicates that the probability of photogenerated carriers also rises as the Bi concentration increases. [24] Figure 5. Transmittance (a) and absorbance (b) profiles of CdSe:Bi thin films at different doping powers The optical properties of the CdSe:Bi films were characterized through optical absorption and transmission measurements. The absorption coefficient can be derived from the transmission spectra using the following equation [25] : \(\alpha=\frac{1}{t}\ln\frac{1}{T}\) (5) where t is the film thickness and T is the transmittance of the deposited film. The optical bandgap is expressed by Tauc relation. [26] \(\alpha h\nu=A{(h\nu-E_{g})}^{\frac{1}{2}}\) (6) where A is a constant, hv is the photon energy. Figure 6. shows the relationship curves between (αhv)² and hv .The bandgap energy of the CdSe:Bi thin film is estimated by extrapolating to the linear part of the curve to the photon energy axis, as shown in Figure6. the band gap increases from 1.728 eV to 1.77 eV as the doping concentration increases from 6. 19 at.% to 16.06 at.%, This may be the rapid sputtering rate of the Bi target, which results in an excessively high Bi doping concentration in the sample. Figure 6. Tauc curves of CdSe:Bi thin films deposited at different doping power Electrical Characterization of CdSe:Bi Thin Films at Different Doping Power The resistivity and carrier concentration of the films were measured using a Hall effect tester. As shown in Figure 7. , the resistivity of the films shows an increasing trend, varying from 6.06 × 10⁻³ Ω·cm to 4.25 × 10⁻³ Ω·cm. The resistivity is minimized at a doping power of 4W, where the resistivity is 6.06 × 10⁻³ Ω·cm, and the carrier concentration is 7.82 × 10¹⁷ /cm⁻³. Compared to undoped CdSe films, the resistivity of CdSe:Bi films is significantly reduced, while the carrier concentration is notably increased. This indicates that a small amount of Bi doping in CdSe films can improve the electrical properties of the films. The resistivity of CdSe:Bi films doped with different concentrations of Bi is increase from 6.06×10 -3 Ω·cm to 4.25×10 -3 Ω·cm. This may be attributed to the decrease in crystallinity and grain size because produces more grain boundaries. grain boundaries act as carrier capture sites, thus decreasing the carrier mobility. Helmer et al [27] and Ekpe et al [28] have reported that higher RF power leads to many defects which inhibit the electron motion, and result in an increase in resistivity. Figure 7. Resistivity and carrier density plots of CdSe:Bi films at different doping powers Structural properties of CdSe:Bi thin films with different doping times Figure 8. shows the XRD patterns of CdSe:Bi films prepared at different doping times. The undoped CdSe film shows the only diffraction peak near 25.4°, which corresponds to the (111) face, and the peak position stays the same and the intensity is enhanced. When Bi is doped into the CdSe films, all the samples match with the JCPDS card (#88-2346). The intensity of the diffraction peaks in the Bi-doped samples is significantly higher than that of the undoped samples. It indicates a small amount of Bi can improve the crystallinity of CdSe films. In the XRD patterns, no diffraction peaks about the element Bi are found. Figure 8. XRD patterns of CdSe:Bi films at different doping times Figure 9. (a-c) shows the EDX patterns of CdSe:Bi films at different doping times. the curves of atomic concentration with doping time were plotted, as shown in Figure10. The doping times of 0.5 min, 1 min, and 2 min for the Bi target corresponded to 1.24 at.%, 1.29 at.%, and 6.19 at.%, respectively. The relative atomic concentrations of Cd atoms and Se atoms show a gradual decreasing trend with increasing sputtering time, The atomic concentrations decrease from 41.73 at.% to 41.03 at.% and 57.03 at.% to 52.78 at.%, respectively. Figure 9. EDX plots of CdSe:Bi films at different doping times. (a) 0.5min; (b) 1min; (c) 2min Figure 10. Variation of elemental content of CdSe:Bi thin films at different doping times Combined with the XRD data of different doping times in Figure 8, the data were processed using Jade 6.0 software, and the grain size, lattice constants, and lattice strains were calculated by the equations above, and the specific data are shown in Table 3. It can be seen that the grain size decreases from 68.84 nm to 68.24 nm with the increase in Bi doping concentration. The film has the maximum grain size when the doping concentration is 12.4 at.%. Combined with previous studies it is found that higher Bi doping concentration leads to a significant decrease in the crystallinity of the film. Figure 11. shows the FESEM image of Bi doped CdSe films at different doping times. Table 3. Structural parameters of CdSe:Bi films at different doping times Sputtering time (min) 2θ (°) FWHM (°) Grain size (nm) Average lattice constant (Å) Lattice strain Dislocation density 0 25.47 0.134 60.71 6.0510 2.59×10 3 2.7×10 4 0.5 25.49 0.117 68.841 6.0478 2.26×10 3 2.1×10 4 1 25.355 0.117 68.823 6.0768 2.27×10 3 2.1×10 4 2 25.364 0.118 68.24 6.0772 2.29×10 3 2.2×10 4 Figure 11. FESEM of CdSe:Bi thin films at different doping times. (a) 0.5min; (b) 1min; (c) 2min; (d) 0min Optical properties of CdSe:Bi films at different doping times Figure 12. shows the optical transmittance and absorbance images of CdSe:Bi thin films at different doping times. As shown in Figure12. (a) It is observed that the transmittance of the film decreases as the doping concentration increases, which may be attributed to scattering losses on the film surface due to the higher Bi concentration. [29] Figure 12. (b) shows a plot of absorbance versus wavelength for both undoped and Bi-doped CdSe films. It exhibits that the typical characteristics of II-VI semiconductor compounds is absorbance following an exponential trend. [30] In the higher wavelength region the absorption is lower for all films and in the lower wavelength region there is a sudden increase in the absorption. Figure 12. Transmittance (a) and absorbance (b) profiles of CdSe:Bi films at different doping times The values of hv and (αhv) 2 are obtained from Figure 12. and Tauc’s relational equation, the plots based on these values are generated, the bandgap values are obtained through extrapolation, as shown in Figure 13. The variation chart of the optical band gap of CdSe:Bi thin films at different doping times. As shown in Figure 14. It can be seen that with the increase in doping concentration the band gap decreases from 1.737 eV to 1.711 eV. The change in band gap is due to the difference in ionic radius, the ionic radius of Bi 3+ is 108 pm but the ionic radius of Cd 3+ is 97 pm. Bi doping narrows the bandgap, thereby facilitating electronic transitions. Figure 13. Plot of ( αhv ) 2 versus photon energy hv for CdSe:Bi thin films at different doping times Figure 14. optical band gap of CdSe:Bi thin films at different doping times as a function of Bi doping time Electrical properties of CdSe:Bi thin films at different doping times The resistivity, carrier concentration of the film was measured using a Hall effect meter. As shown in Figure 15. it can be seen that the resistivity of the film shows a trend of decreasing and then increasing. and varies within the range of 3.24 × 10 -2 Ω·cm - 4.4 × 10 - 1 Ω·cm, and the resistivity appears to have a minimum of 3.24 when the dopant concentration is 1.29 at.%, followed by a slight increase, but overall this resistivity is significantly lower than the undoped sample. This decrease in resistivity with increasing Bi concentration can be explained by the increase in the number of free charge carriers in the doped atoms Bi [31]. Combined with the previous resistivity data, it can be found that the resistivity decreases and then increases during the increase of Bi doping concentration from 1.24 at.% to 16.06 at.%. The lowest resistivity of the sample prepared at a doping concentration of 6. 19 at.% and give the best electrical performance. Figure 15. Resistivity and carrier concentration of CdSe:Bi films at different doping times Conclusions In this paper, CdSe:Bi thin films were prepared on Si and glass substrates by RF and DC magnetron co-sputtering at different sputtering power and sputtering time. It is found that the crystallinity of the films is related to the concentration of Bi doping, and quantitative Bi doping improves the crystallinity of CdSe thin films. when the concentration of doping is too high, the crystallinity of the films will be significantly reduced; With the increase of the doping concentration, the grain size of the films decreases from 68.841 nm to 55.94 nm. In the visible region, the films are almost opaque, and In the near infrared region, the optical transmission is not less than 50%, and the optical band gap decreases from 68.841 nm to 55.94 nm. less than 50% and the optical band gap increases from 1.74 eV to 1.77 eV. The resistivity varies in the range of 0.006Ω·cm-0.425Ω·cm. The doping concentration of 6. 19at% gives the best electrical performance with resistivity of 0.006Ω·cm. The study in this paper shows that the electrical performance of CdSe:Bi films is better than that of undoped CdSe films. Received: ((will be filled in by the editorial staff)) Revised: ((will be filled in by the editorial staff)) Published online: ((will be filled in by the editorial staff)) Dou. Yao-Ran; Jin. Jian, Cui. Xi-Lin; Gu. Guang-Rui* Supplementary Material File (image11.emf) Download 40.87 KB File (image19.emf) Download 28.63 KB File (image20.emf) Download 58.34 KB File (image5.emf) Download 74.45 KB File (image6.emf) Download 67.54 KB File (image7.emf) Download 69.52 KB File (image8.emf) Download 55.95 KB File (image9.emf) Download 232.29 KB References 1. LI C X, WANG F G,CHEN Y L. Characterization of sputtered CdSe thin films as the window layer for CdTe solar cells. Materials Science in Semiconductor Processing. 2018 , 83 , 89-95. Google Scholar 2. EL-MENYAWY E M, AZABA A. Optical, electrical and photoelectrical properties of nanocrystalline cadmium selenide films for photosensor applications. Optik . 2018 , 168 , 217-227. Google Scholar 3. MATHURI S, RAMAMURTHI K, RAMESH B R. Influence of deposition distance and substrate Temperature on the CdSe thin films deposited by electron beam evaporation technique[J].Thin Solid Films. 2017 , 625 , 138-147. Google Scholar 4. Patil V T, Attarde R R, Toda Y R. Synthesis And Characterization of Google Scholar 5. Nanostructured Vacuum Evaporated Bi Doped CdSe Thin Films. IOSR J. Appl. Phys. 2016 , 8(5) , 35-41 Google Scholar 6. Heo K, Lee H, Kim T. Structural control of photoconductive CdSe nanostructures through a Bi-assisted VLS process. Materials Letters. 2016 , 182 , 129-133. Google Scholar 7. Santhosh T C M, Bangera K V, Shivakumar G K. Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications. Materials Science in Semiconductor Processing . 2017 , 68 , 114-117. Google Scholar 8. Rosly H N, Rahman K S, Harif N. Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering. Superlattices and Microstructures. 2020 , 148 , 106716. Google Scholar 9. Sharma K, Al-Kabbi A S, Saini G S S. Indium doping induced modification of the structural, optical and electrical properties of nanocrystalline CdSe thin films. Journal of alloys and compounds. 2013 , 564 ,42-48. Google Scholar 10. Alasvand A, Kafashan H. Comprehensive physical studies on nanostructured Zn-doped CdSe thin films. Journal of Alloys and Compounds. 2019 , 789 , 108-118. Google Scholar 11. Abdulwahab A M, Asma’a Ahmed A L A, Ahmed A A A. Influence of Ni-Co dual doping on structural and optical properties of CdSe thin films prepared by chemical bath deposition method. Optik . 2021 , 236 , 166659. Google Scholar 12. Sharma K, Al-Kabbi A S, Saini G S S. Indium doping induced modification of the structural, optical and electrical properties of nanocrystalline CdSe thin films. Journal of alloys and compounds. 2013 , 564 , 42-48. Google Scholar 13. Alasvand A, Kafashan H. Comprehensive physical studies on nanostructured Zn-doped CdSe thin films. Journal of Alloys and Compounds. 2019 , 789 , 108-118. Google Scholar 14. Zhao G, Zhang T, Zhang T. Electrical and optical properties of titanium nitride coatings prepared by atmospheric pressure chemical vapor deposition. Journal of non-crystalline solids. 2008 , 354(12-13) , 1272-1275. Google Scholar 15. Abdulwahab A M, Asma’a Ahmed A L A, Ahmed A A A. Influence of Ni-Co dual doping on structural and optical properties of CdSe thin films prepared by chemical bath deposition method. Optik. 2021 , 236 , 166659. Google Scholar 16. Sahu P K, Das R, Lalwani R. Incorporation of tin in nanocrystalline CdSe thin films: a detailed study of optoelectronic and microstructural properties. Applied Physics A. 2018 , 124(10) , 1-13. Google Scholar 17. Salavati-Niasari M, Davar F. Shape selective hydrothermal synthesis of tin sulfide nanoflowers based on nanosheets in the presence of thioglycolic acid. Journal of alloys and compounds. 2010 , 492(1-2) , 570-575. Google Scholar 18. Anwar S, Pattanaik M, Mishra B K. Effect of deposition time on lead selenide thermoelectric thin films prepared by chemical bath deposition technique. Materials Science in Semiconductor Processing. 2015 , 34 , 45-51. Google Scholar 19. Snyder R L. X-ray Characterization of Materials . 1999 . Google Scholar 20. Bao Z, Yang X, Li B. The study of CdSe thin film prepared by pulsed laser deposition for CdSe/CdTe solar cell. Journal of Materials Science: Materials in Electronics. 2016 , 27(7). 7233-7239. Google Scholar 21. Li N, Li D, Zhen Z, Zhang R, Mu R, Xu Z. Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition. Materials Today Communications . 2023 , 36 . Google Scholar 22. Wei H, Zhang L, Liu Z. Spontaneous growth of indium nanostructures. Journal of crystal growth. 2006 , 297(2) , 300-305. Google Scholar 23. Pammi S V N, Jung H J, Yoon S G. Low-temperature nanocluster deposition (NCD) for improvement of the structural, electrical, and optical properties of ITO thin films. IEEE transactions on nanotechnology . 2011 , 10(5) , 1059-1065. Google Scholar 24. Hymavathi B, Rajesh K B and Subba R T. Investigations on Physical Properties of Nanostructured Cr doped CdO Thin Films Prepared by DC Reactive Magnetron Sputtering. Mater. Today, 2017 , 4 , 7867-7874 Google Scholar 25. Patil K R, Paranjape D V, Sathaye S D. A process for preparation of Q-CdSe thin films by liquid-liquid interface reaction technique. Materials Letters , 2000 , 46(2-3) , 81-85. Google Scholar 26. Benmoussa M, Ibnouelghazi E, Bennouna A and Ameziane E L. Structural, electrical and optical properties of sputtered vanadium pentoxide thin films. Thin Solid Films , 1995 , 265: 22-28. Google Scholar 27. SINDHUA HS, MAIDURBSR, PATILPS. Nonlinear optical and optical power limiting studies of Zn 1-x Mn x O thin films prepared by spray pyrolysis . Optik. 2019 , 182 , 671-681. Google Scholar 28. Helmer J C, Wickersham C E. Pressure effects in planar magnetron sputter deposition. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1986, 4(3) , 408-412. Google Scholar 29. Ekpe S D, Dew S K. Energy deposition at the substrate in a magnetron sputtering system. Reactive Sputter Deposition. Springer, Berlin, Heidelberg. 2008 , 229-254. Google Scholar 30. Santhosh T C M, Bangera K V, Shivakumar G K. Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications. Materials Science in Semiconductor Processing. 2017 , 68 , 114-117. Google Scholar 31. Pawar S A, Devan R S, Patil D S. Improved solar cell performance of chemosynthesized cadmium selenide pebbles. Electro chimica Acta. 2013 , 98 , 244-254. Google Scholar 32. Structural, Optical and Electrical Properties of CdSe:Bi thin Films by Magnetron Co-sputtering Google Scholar Information & Authors Information Version history V1 Version 1 07 March 2025 Copyright This work is licensed under a Non Exclusive No Reuse License. Keywords cdse:bi films magnetron sputtering resistivities transmittance Authors Affiliations Yaoran Dou 0009-0003-7029-8690 Yanbian University View all articles by this author Xi-Lin Cui Jian jin Yanbian University View all articles by this author Guang-Rui Gu [email protected] Yanbian University View all articles by this author Metrics & Citations Metrics Article Usage 173 views 119 downloads .FvxKWukQNSOunydq8rnd { width: 100px; } Citations Download citation Yaoran Dou, Xi-Lin Cui Jian jin, Guang-Rui Gu. Structural, Optical and Electrical Properties of CdSe:Bi thin Films by Magnetron Co-sputtering. Authorea . 07 March 2025. 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