Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide

Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide Linbo Shao, Xin Yang, Matthew Porter, Yuan Qin, Zineng Yang, Hehe Gong, and 5 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7402489/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract Cryogenic electronic circuits are essential for interfacing, control, and error correction for scalable quantum computing platforms operating at millikelvin temperatures, yet face stringent thermal constraints demanding ultra-low power operation. Neuromorphic devices and circuits, emulating the spiking behavior of biological neurons, offer a compelling solution for achieving energy-efficient electronics under these conditions. Here, we report the gate-controlled negative differential resistance (NDR) in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). This NDR effect, arising from impact ionization involving dual dopant levels in SiC MOSFET structures, achieves an unprecedented on/off current ratio of 107, the highest reported among NDR devices to date. Meanwhile, the behavior of NDR can be fully controlled by the gate voltage of the MOSFET. Leveraging this gate-controlled NDR, we demonstrate programmable cryogenic spiking neuromorphic circuits, including sensory, logic, and integrate-and-fire neurons, with functionality tuned by gate or drain voltages. The established foundry-level manufacturability of SiC devices underscores their significant potential for integration into scalable cryogenic platforms for advanced sensing, computing, and quantum information applications. Physical sciences/Engineering/Electrical and electronic engineering Physical sciences/Physics/Electronics, photonics and device physics/Electronic and spintronic devices Full Text Additional Declarations There is NO Competing Interest. Supplementary Files NDRsupplementary.pdf SUPPLEMENTARY INFORMATION Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7402489","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":515723184,"identity":"7698654b-e13a-45eb-b834-0e46fcd59611","order_by":0,"name":"Linbo 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