Molecular beam epitaxial In2Te3 electronic devices

Molecular beam epitaxial In2Te3 electronic devices | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Molecular beam epitaxial In 2 Te 3 electronic devices Gyu-Chul Yi, Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, and 5 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4499568/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 22 Nov, 2024 Read the published version in NPG Asia Materials → Version 1 posted 8 You are reading this latest preprint version Abstract We report on electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In 2 Te 3 grown on hexagonal boron nitride ( h -BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to enhance surface coverage and large grain sizes for high-quality In 2 Te 3 . Scanning transmission electron microscopy (STEM) imaging demonstrated an atomically clean and abrupt interface between the In 2 Te 3 and h -BN substrates. The MBE-grown In 2 Te 3 FETs exhibited superior electrical properties compared to previously reported In 2 Te 3 FETs, including a mobility of 6.07 cm² V⁻¹ s⁻¹, a subthreshold swing close to 6 V dec⁻¹, and an impressive on/off ratio of about 10⁵. Furthermore, the Ti/In 2 Te 3 Schottky diodes exhibits a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV. Physical sciences/Materials science/Materials for devices/Electronic devices Physical sciences/Nanoscience and technology/Nanoscale devices/Electronic devices Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Introduction Recently, there has been increasing interest in the preparation and characterization of group III-VI chalcogenide semiconductor material-based electronic and optoelectronic device applications 1 – 11 . Among these materials, In 2 Te 3 stands out as a narrow-bandgap semiconductor with diverse applications in superconductors, optoelectronics, and electronic devices. For these applications, high-quality In 2 Te 3 thin films is necessary. However, achieving high-quality In 2 Te 3 films remains challenging despite employing methods like chemical vapor deposition (CVD) and pulsed laser deposition (PLD) 12 , 13 . The variable stoichiometries of indium telluride (e.g., In 2 Te 3 , InTe, In 4 Te 3 , In 7 Te 10 ) complicate composition control 11 , 12 , 14 , 15 , posing significant obstacles to the preparation of high-quality In 2 Te 3 films. Here, we employed molecular beam epitaxy (MBE) to achieve precise control over the composition and phase, enabling the production of high-quality In 2 Te 3 thin films. In this study, we report on the fabrication and characterization of MBE-grown In 2 Te 3 field-effect transistors (FETs) and Schottky diodes. Materials and Methods 1. In 2 Te 3 growth using MBE In 2 Te 3 thin films were grown on hexagonal boron nitride ( h -BN) substrates using a custom-built MBE (Fig. S1 ) system for the growth of (In x Ga 1−x ) 2 (Se y Te 1−y ) 3 materials. The chamber base pressure of the MBE system was in low level of 10 –9 Torr. h -BN layers were mechanical exfoliated onto a Si wafer covered with a 300 nm-thick SiO 2 for substrate preparation. High purity indium and tellurium fluxes were evaporated by Knudsen cells. Te/In beam flux ratio was 14–16 for the growth. Before 1st step growth, a thermal cleaning process was conducted for 20 minutes at 500°C under ultra-high vacuum (UHV) conditions before the growth of In 2 Te 3 . First, progress the 1st step growth was performed at 270°C for 4 minutes. After this, the indium Knudsen cell shutter was closed, and the substrate temperature was gradually increased to 570°C at a rate of 10°C per minute with tellurium flux. Next, the 2nd step growth was conducted at 570°C for 9 minutes, then the indium shutter indium Knudsen cell shutter was closed. Subsequently, the substrate temperature was decreased to room temperature at a rate of 10°C per minute with tellurium flux. Finally, the substrate shutter was closed at 500°C. 2. Optical characterizations A micro-Raman system was used to measure samples in ambient air at room temperature utilizing ~ 150 µW of 532 nm laser. To acquire the Raman spectra, the accumulation time 20s was used. 3. Surface morphological and structural characterizations For studying the surface morphology of In 2 Te 3 films on h -BN substrates, field-emission scanning electron microscopy (SEM) (ZEISS-SUPRA, SIGMA, MERLIN COMPACT), atomic force microscopy (AFM) (NX-10). A 200 kV CS corrected monochromated transmission electron microscopy (TEM) (Themis Z) was used for high-resolution scanning transmission electron microscopy (HR-STEM) imaging. 4. Device fabrication First, h -BN layers were placed on SiO 2 /Si wafer, this acts as the back gate dielectric materials and electrode, respectively. Then, MBE method was used to grow In 2 Te 3 on h -BN substrates. Using a e -beam evaporator, an array of aligner markers Ti/Au 10/30 nm were deposited. For ohmic contacts and Schottky contact, Pd/Au 10/30 nm, Ti/Au 10/30 nm were deposited by e -beam evaporator, respectively. The negative e -beam resist ma-N 2405 (microresist technology) layer was spin-coated (1000/4000 rpm 10/60 s). For patterning the ma-N 2405 layer, e -beam lithography was used. Then, the unwanted In 2 Te 3 films were etched by reactive ion etching using Cl 2 gas. The electrical measurements were carried out in a Keithley 4200 semiconductor analyzer, 2601A and 2400 source meters. Results and Discussion For studying growth behavior, we investigated the surface morphology of the In 2 Te 3 thin films at various growth temperatures, which ranged from 420°C to 570°C (Fig. 1 a). Facets were absent at a lower growth temperature of 420°C but became discernible as the temperature increased. The domain sizes expanding from several tens of nanometers (at 470°C) to several hundred nanometers (at 520°C), suggest that higher temperatures lead to larger terraces and smoother surfaces. However, no growth was observed at 570°C, which can make the uniform thin film difficult for electrical applications, primarily due to the lack of dangling bonds on h -BN, as previously reported 16 . We adopted a two-step growth strategy to address this issue, enhancing nucleation sites at lower temperatures before proceeding to higher temperatures for full-coverage film growth. Initially, at a low temperature, the 1st growth step aimed to secure nearly complete surface coverage. Following this, while gradually increasing the substrate temperature, the films were annealed under a tellurium flux for several minutes. This approach effectively addresses the challenges posed by the inert nature of h -BN at high temperatures, increasing nucleation sites and preventing film texturing. The effectiveness of this two-step growth approach is depicted in the surface morphologies of films grown at various 2nd step temperatures, illustrated in Fig. 1 b. Since films nucleated below this temperature kept island structures even after high temperature annealing, 270°C was chosen as the 1st step growth temperature. For the second step, higher temperatures of 550°C and 570°C led to a flat and uniform surface morphology. However, at temperatures around 590°C, surface coverage decreased, likely due to the re-evaporation of In 2 Te 3 films. Based on these observations, the optimal temperatures for the first and second steps were established at 270°C and 550–570°C, respectively. We employed AFM to obtain atomic-scale surface information on the In 2 Te 3 films. The AFM analysis revealed smooth terraces spanning an area of over 200 nm, indicative of a desirable growth behavior that produces atomically smooth films (Fig. 1 c). Additionally, the AFM image displayed well-defined crystal facets in each domain, with a root mean square (RMS) roughness of 1.4 nm. Atomic arrangement and interfacial quality of the In 2 Te 3 / h -BN were analyzed by HR-STEM. Cross-sectional HR-STEM imaging illustrates a clean interface between In 2 Te 3 and h -BN, free of any interfacial layers, cracks, or dislocations, with In 2 Te 3 exhibiting well-aligned growth directions parallel to the h -BN substrate (Fig. 2 a). The composition at the interface was determined by TEM-energy dispersive X-ray spectroscopy (EDS) mapping, revealing atomic percentages of 40.2% indium and 59.8% tellurium, consistent with the stoichiometric composition of In 2 Te 3 , as depicted in Fig. 2 b. Further stoichiometric characterization was conducted using Raman spectroscopy. As detailed in Fig. S1 , three prominent peaks were identified at 104, 125, and 142 cm − 1 . These peaks are characteristic of the In 2 Te 3 crystal symmetry, specifically corresponding to the A 1g and E g vibrational modes, respectively. These peaks highly correspond to the In 2 Te 3 . These results were consistent with Fig. 2 b. This precise control of composition underscores the benefits of utilizing MBE for maintaining a clean interface. As illustrated in Fig. 3 , we utilized these In 2 Te 3 thin films grown on h -BN for electronic device fabrication. Initially, Pd/Au bilayer contacts were deposited on In 2 Te 3 / h -BN using e-beam evaporation to form ohmic contacts. Subsequently, the channel was defined through reactive ion etching (RIE) with chlorine gas, employing a negative tone resist. The electrical characteristics of the back-gated In 2 Te 3 field-effect transistors (FETs) were evaluated by measuring the gate bias (V gs )-dependent current (I ds ) curve. Normally, the back-gated In 2 Te 3 FETs are on, and as V gs increases positively, Ids decreases. The threshold voltage is identified as V gs = − 10 V, at which point the device is turned off (Fig. 4 a). The output characteristics demonstrate that the back-gated In 2 Te 3 FETs function as typical p -channel FETs. Unlike conventional FETs, there is no I ds saturation observed, suggesting that traditional channel pinch-off and channel length modulation do not occur. The current gradually decreases as the gate voltage increases positively according to the V gs –I ds curves for V ds of 1 V (Fig. 4 a). These transfer characteristics indicate typical p -channel FETs behavior and operation in depletion mode. As V gs increases, the current drastically drops approximately 10 − 10 A beyond − 16 V which is the back-gated In 2 Te 3 FETs’ threshold voltage (V th ). A high I max /I min ratio of 10 5 was observed. Another important indicator of transistor performance is transconductance (g m = dI ds /dV gs ), which peaks at maximum values close to the subthreshold region at 28 nS µm − 1 when V ds was set to 1 V. The peak field-effect mobility, determined from the transconductance in the linear regime (V ds = 1 V), was measured to be 6.07 cm² V⁻¹ s⁻¹, which is higher than in previous works. The subthreshold swing was 6 V dec⁻¹, and the gate leakage current was 10⁻ 10 A (Fig. 4 b). Compared to other p -channel transistors fabricated using various methods and materials from the group III-VI chalcogenide family, our MBE-grown In 2 Te 3 demonstrates enhanced performance, making it more suitable for switching devices (Fig. 4 c). Furthermore, In 2 Te 3 Schottky diodes were fabricated for potential applications in logic circuits alongside FETs. To evaluate their electrical properties, the I–V characteristics of the Ti/In 2 Te 3 Schottky diodes were measured, forming a metal/semiconductor Schottky junction with a titanium (Ti) electrode (Fig. 5 a). The I–V characteristic curve of the Ti/In 2 Te 3 Schottky diodes shows a turn-on voltage of 1.34 V and a breakdown voltage of − 3 V (Fig. 5 b). The observed rectifying behavior is attributed to the formation of a Schottky contact between the low work function of titanium (4.33 eV) and the p-type semiconductor behavior of In 2 Te 3 . A typical I–V characteristics of a Schottky diodes, can be described by the following equation: \({I={I}_{s}\text{e}\text{x}\text{p}(qV/nk}_{B}T\) -1) where k B ​ is the Boltzmann constant, n is the ideality factor, T is the absolute temperature, and I s ​ is the saturation current of diodes. From the I–V curves, the rectifying ratio, ideality factor, and Schottky barrier height values were measured to be 514, 26.7, and 0.68 eV, respectively. These results demonstrated enhanced performance compared to previously reported In 2 Te 3 based Schottky diodes with lower reverse-bias leakage currents 17 . Such performance suggests that the diode can reliably function under reverse current flow, making it suitable for applications that demand minimal leakage, such as in high-frequency device applications. Conclusions We have successfully fabricated p -channel FETs and Schottky diode based on MBE-grown In 2 Te 3 . The two-step growth strategy employed resulting in full-coverage, atomically smooth In 2 Te 3 films. Our In 2 Te 3 films grown on h -BN substrates has shown atomically clean interfaces by employing MBE for precise control over composition and phase. The electrical characteristics of the MBE-grown In 2 Te 3 FETs revealed a significant improvement, including enhanced mobility, reduced subthreshold swing, and a highly improved on/off ratio. Additionally, the I – V characteristics of the Ti/In 2 Te 3 Schottky diodes showed a low saturation current and higher barrier height, compared to previous In 2 Te 3 -based diodes. The high on-off ratio of the p -channel FETs and the low saturation current of the Schottky diodes increase the versatility and the potential for group III-VI chalcogenide-based integrated circuits. These characteristics make MBE-grown In 2 Te 3 FETs and Schottky didoes useful in logic devices. We believe that this approach to preparing high-quality group III-VI chalcogenide thin films can be promising for next-generation electronics. Declarations Conflict of interest The authors declare no competing interests. Acknowledgments This work was financially supported by National Research Foundation (NRF) of Korea (NRF-2021R1A5A1032996) and the Science Research Center (SRC) for Novel Epitaxial Quantum Architectures. This research was also supported by Basic Science Research Program through the NRF funded by the Ministry of Education (2021R1A6A1A10044154), NRF-2022R1A2C3007807, and NRF-2019M3D1A1079215. Additionally, we also acknowledge the Brain Korea 21-Plus Program, the Institute of Applied Physics (IAP). Research Institute of Advanced Materials (RIAM) at Seoul National University. References Si, M., Saha, A. 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Barrier Inhomogeneities of Al/p-In 2 Te 3 Thin Film Schottky Diodes. Article in Journal of Nano-and Electronic Physics 3, (2011). Additional Declarations (Not answered) Supplementary Files Supplementaryinformation.docx Figure S1. Schematic representation of MBE system. Figure S2. Raman spectrum of In 2 Te 3 grown on h -BN. Cite Share Download PDF Status: Published Journal Publication published 22 Nov, 2024 Read the published version in NPG Asia Materials → Version 1 posted Editorial decision: revise 12 Aug, 2024 Review # 1 received at journal 09 Jul, 2024 Reviewer # 2 agreed at journal 17 Jun, 2024 Reviewer # 1 agreed at journal 05 Jun, 2024 Reviewers invited by journal 05 Jun, 2024 Submission checks completed at journal 30 May, 2024 Editor assigned by journal 29 May, 2024 First submitted to journal 29 May, 2024 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4499568","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":311097872,"identity":"63333d1c-f6b1-4a5a-83f1-f05f7e27897f","order_by":0,"name":"Gyu-Chul 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01:00:08","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-4499568/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-4499568/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1038/s41427-024-00578-0","type":"published","date":"2024-11-22T05:00:00+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":59052511,"identity":"e8062c54-04d8-4a66-b8da-d6fa064166e4","added_by":"auto","created_at":"2024-06-25 20:16:18","extension":"png","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":1232807,"visible":true,"origin":"","legend":"\u003cp\u003eSurface morphology of MBE-grown In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3 \u003c/sub\u003ethin films on \u003cem\u003eh\u003c/em\u003e-BN layers (a) \u0026nbsp;SEM images of one-step grown films at different growth temperatures of 420, 470, 520, and 570 °C, respectively. (b)\u0026nbsp; SEM images of two-step grown films with initial deposition at 270 °C and 2nd step growth at 550, 570, and 590 °C, respectively. (c) AFM image of In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e grown on \u003cem\u003eh\u003c/em\u003e-BN. AFM line profile obtained across the red line in the main figure shown in the inset in (c). Scale bar for inset 200 nm.\u003c/p\u003e","description":"","filename":"Figure1.png","url":"https://assets-eu.researchsquare.com/files/rs-4499568/v1/b7ad09a340b1336772d196a9.png"},{"id":59052515,"identity":"61f638c8-3fc4-4b2a-8243-3b27ff1c8af5","added_by":"auto","created_at":"2024-06-25 20:16:18","extension":"png","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":531731,"visible":true,"origin":"","legend":"\u003cp\u003e(a) Cross-sectional HR-STEM image of the In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e/\u003cem\u003eh\u003c/em\u003e-BN heterointerface. The inset in (a) shows the low magnification STEM image in the main figure (b) Elemental mapping of In and Te using STEM–EDS. Scale bar for inset, 1 nm.\u003c/p\u003e","description":"","filename":"Figure2.png","url":"https://assets-eu.researchsquare.com/files/rs-4499568/v1/9f3b584ef597be3f695ef077.png"},{"id":59052510,"identity":"f8504245-1061-4981-95dd-36bbb7c24ce7","added_by":"auto","created_at":"2024-06-25 20:16:18","extension":"png","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":38210,"visible":true,"origin":"","legend":"\u003cp\u003eSchematic representation of fabrication process and cross-sectional schematic of the back-gated In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e FETs.\u003c/p\u003e","description":"","filename":"Figure3.png","url":"https://assets-eu.researchsquare.com/files/rs-4499568/v1/12ed118d3caee8f69923616f.png"},{"id":59052980,"identity":"a94797f0-fc35-4a62-8efb-61c71459524b","added_by":"auto","created_at":"2024-06-25 20:24:18","extension":"png","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":105640,"visible":true,"origin":"","legend":"\u003cp\u003e(a) output curve (b) transfer curve (c) benchmarking p-channel transistors based on group III-VI chalcogenide (field-effect mobility versus on/off ratio).\u003c/p\u003e","description":"","filename":"Figure4.png","url":"https://assets-eu.researchsquare.com/files/rs-4499568/v1/3385ed33bf36d5a481736783.png"},{"id":59052979,"identity":"7122e937-17ec-426b-a346-0f8bdfc4df34","added_by":"auto","created_at":"2024-06-25 20:24:18","extension":"png","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":51322,"visible":true,"origin":"","legend":"\u003cp\u003e(a) Cross-sectional schematic of Ti/In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Schottky diodes (b) Typical \u003cem\u003eI –V\u003c/em\u003e characteristic curve of a Ti/In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Schottky diodes. Inset shows \u003cem\u003elog I vs V \u003c/em\u003eplot. The \u003cem\u003eI–V\u003c/em\u003e characteristic curve shows rectifying behavior.\u003c/p\u003e","description":"","filename":"Figure5.png","url":"https://assets-eu.researchsquare.com/files/rs-4499568/v1/138a717f9a561249ace0fc00.png"},{"id":69610189,"identity":"989177c1-d77e-4850-a1ce-60743db6e58f","added_by":"auto","created_at":"2024-11-22 08:09:16","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":2440981,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-4499568/v1/fcb2192e-098a-482f-8ac9-7d1c0f36ca8e.pdf"},{"id":59052513,"identity":"cf0d8972-7438-4b5e-9da6-5c555a0f7852","added_by":"auto","created_at":"2024-06-25 20:16:18","extension":"docx","order_by":1,"title":"","display":"","copyAsset":false,"role":"supplement","size":270444,"visible":true,"origin":"","legend":"\u003cp\u003e\u003cstrong\u003eFigure S1\u003c/strong\u003e. Schematic representation of MBE system.\u003c/p\u003e\n\u003cp\u003e\u003cstrong\u003eFigure S2\u003c/strong\u003e. \u003cstrong\u003eRaman spectrum of In\u003c/strong\u003e\u003csub\u003e\u003cstrong\u003e2\u003c/strong\u003e\u003c/sub\u003e\u003cstrong\u003eTe\u003c/strong\u003e\u003csub\u003e\u003cstrong\u003e3\u003c/strong\u003e\u003c/sub\u003e\u003cstrong\u003e grown on \u003c/strong\u003e\u003cem\u003eh\u003c/em\u003e\u003cstrong\u003e-BN.\u003c/strong\u003e\u003c/p\u003e","description":"","filename":"Supplementaryinformation.docx","url":"https://assets-eu.researchsquare.com/files/rs-4499568/v1/5f33d550f313070b2bb47fca.docx"}],"financialInterests":"(Not answered)","formattedTitle":"\u003cb\u003eMolecular beam epitaxial In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e electronic devices\u003c/b\u003e","fulltext":[{"header":"Introduction","content":"\u003cp\u003eRecently, there has been increasing interest in the preparation and characterization of group III-VI chalcogenide semiconductor material-based electronic and optoelectronic device applications \u003csup\u003e\u003cspan additionalcitationids=\"CR2 CR3 CR4 CR5 CR6 CR7 CR8 CR9 CR10\" citationid=\"CR1\" class=\"CitationRef\"\u003e1\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR11\" class=\"CitationRef\"\u003e11\u003c/span\u003e\u003c/sup\u003e. Among these materials, In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e stands out as a narrow-bandgap semiconductor with diverse applications in superconductors, optoelectronics, and electronic devices. For these applications, high-quality In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e thin films is necessary. However, achieving high-quality In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films remains challenging despite employing methods like chemical vapor deposition (CVD) and pulsed laser deposition (PLD) \u003csup\u003e\u003cspan citationid=\"CR12\" class=\"CitationRef\"\u003e12\u003c/span\u003e,\u003cspan citationid=\"CR13\" class=\"CitationRef\"\u003e13\u003c/span\u003e\u003c/sup\u003e. The variable stoichiometries of indium telluride (e.g., In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e, InTe, In\u003csub\u003e4\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e, In\u003csub\u003e7\u003c/sub\u003eTe\u003csub\u003e10\u003c/sub\u003e) complicate composition control \u003csup\u003e\u003cspan citationid=\"CR11\" class=\"CitationRef\"\u003e11\u003c/span\u003e,\u003cspan citationid=\"CR12\" class=\"CitationRef\"\u003e12\u003c/span\u003e,\u003cspan citationid=\"CR14\" class=\"CitationRef\"\u003e14\u003c/span\u003e,\u003cspan citationid=\"CR15\" class=\"CitationRef\"\u003e15\u003c/span\u003e\u003c/sup\u003e, posing significant obstacles to the preparation of high-quality In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films.\u003c/p\u003e \u003cp\u003eHere, we employed molecular beam epitaxy (MBE) to achieve precise control over the composition and phase, enabling the production of high-quality In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e thin films. In this study, we report on the fabrication and characterization of MBE-grown In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e field-effect transistors (FETs) and Schottky diodes.\u003c/p\u003e"},{"header":"Materials and Methods","content":"\u003cdiv id=\"Sec3\" class=\"Section2\"\u003e\n\u003ch2\u003e1. In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e growth using MBE\u003c/h2\u003e\n\u003cp\u003eIn\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e thin films were grown on hexagonal boron nitride (\u003cem\u003eh\u003c/em\u003e-BN) substrates using a custom-built MBE (Fig. \u003cspan class=\"InternalRef\"\u003eS1\u003c/span\u003e) system for the growth of (In\u003csub\u003ex\u003c/sub\u003eGa\u003csub\u003e1\u0026minus;x\u003c/sub\u003e)\u003csub\u003e2\u003c/sub\u003e(Se\u003csub\u003ey\u003c/sub\u003eTe\u003csub\u003e1\u0026minus;y\u003c/sub\u003e)\u003csub\u003e3\u003c/sub\u003e materials. The chamber base pressure of the MBE system was in low level of 10\u003csup\u003e\u0026ndash;9\u003c/sup\u003e Torr. \u003cem\u003eh\u003c/em\u003e-BN layers were mechanical exfoliated onto a Si wafer covered with a 300 nm-thick SiO\u003csub\u003e2\u003c/sub\u003e for substrate preparation. High purity indium and tellurium fluxes were evaporated by Knudsen cells. Te/In beam flux ratio was 14\u0026ndash;16 for the growth. Before 1st step growth, a thermal cleaning process was conducted for 20 minutes at 500\u0026deg;C under ultra-high vacuum (UHV) conditions before the growth of In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e. First, progress the 1st step growth was performed at 270\u0026deg;C for 4 minutes. After this, the indium Knudsen cell shutter was closed, and the substrate temperature was gradually increased to 570\u0026deg;C at a rate of 10\u0026deg;C per minute with tellurium flux. Next, the 2nd step growth was conducted at 570\u0026deg;C for 9 minutes, then the indium shutter indium Knudsen cell shutter was closed. Subsequently, the substrate temperature was decreased to room temperature at a rate of 10\u0026deg;C per minute with tellurium flux. Finally, the substrate shutter was closed at 500\u0026deg;C.\u003c/p\u003e\n\u003c/div\u003e\n\u003cdiv id=\"Sec4\" class=\"Section2\"\u003e\n\u003ch2\u003e2. Optical characterizations\u003c/h2\u003e\n\u003cp\u003eA micro-Raman system was used to measure samples in ambient air at room temperature utilizing\u0026thinsp;~\u0026thinsp;150 \u0026micro;W of 532 nm laser. To acquire the Raman spectra, the accumulation time 20s was used.\u003c/p\u003e\n\u003cdiv id=\"Sec5\" class=\"Section3\"\u003e\n\u003ch2\u003e3. Surface morphological and structural characterizations\u003c/h2\u003e\n\u003cp\u003eFor studying the surface morphology of In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films on \u003cem\u003eh\u003c/em\u003e-BN substrates, field-emission scanning electron microscopy (SEM) (ZEISS-SUPRA, SIGMA, MERLIN COMPACT), atomic force microscopy (AFM) (NX-10). A 200 kV CS corrected monochromated transmission electron microscopy (TEM) (Themis Z) was used for high-resolution scanning transmission electron microscopy (HR-STEM) imaging.\u003c/p\u003e\n\u003c/div\u003e\n\u003c/div\u003e\n\u003ch3\u003e4. Device fabrication\u003c/h3\u003e\n\u003cp\u003eFirst, \u003cem\u003eh\u003c/em\u003e-BN layers were placed on SiO\u003csub\u003e2\u003c/sub\u003e/Si wafer, this acts as the back gate dielectric materials and electrode, respectively. Then, MBE method was used to grow In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e on \u003cem\u003eh\u003c/em\u003e-BN substrates. Using a \u003cem\u003ee\u003c/em\u003e-beam evaporator, an array of aligner markers Ti/Au 10/30 nm were deposited. For ohmic contacts and Schottky contact, Pd/Au 10/30 nm, Ti/Au 10/30 nm were deposited by \u003cem\u003ee\u003c/em\u003e-beam evaporator, respectively. The negative \u003cem\u003ee\u003c/em\u003e-beam resist ma-N 2405 (microresist technology) layer was spin-coated (1000/4000 rpm 10/60 s). For patterning the ma-N 2405 layer, \u003cem\u003ee\u003c/em\u003e-beam lithography was used. Then, the unwanted In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films were etched by reactive ion etching using Cl\u003csub\u003e2\u003c/sub\u003e gas. The electrical measurements were carried out in a Keithley 4200 semiconductor analyzer, 2601A and 2400 source meters.\u003c/p\u003e"},{"header":"Results and Discussion","content":"\u003cp\u003eFor studying growth behavior, we investigated the surface morphology of the In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e thin films at various growth temperatures, which ranged from 420\u0026deg;C to 570\u0026deg;C (Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e1\u003c/span\u003ea). Facets were absent at a lower growth temperature of 420\u0026deg;C but became discernible as the temperature increased. The domain sizes expanding from several tens of nanometers (at 470\u0026deg;C) to several hundred nanometers (at 520\u0026deg;C), suggest that higher temperatures lead to larger terraces and smoother surfaces. However, no growth was observed at 570\u0026deg;C, which can make the uniform thin film difficult for electrical applications, primarily due to the lack of dangling bonds on \u003cem\u003eh\u003c/em\u003e-BN, as previously reported \u003csup\u003e\u003cspan citationid=\"CR16\" class=\"CitationRef\"\u003e16\u003c/span\u003e\u003c/sup\u003e.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eWe adopted a two-step growth strategy to address this issue, enhancing nucleation sites at lower temperatures before proceeding to higher temperatures for full-coverage film growth. Initially, at a low temperature, the 1st growth step aimed to secure nearly complete surface coverage. Following this, while gradually increasing the substrate temperature, the films were annealed under a tellurium flux for several minutes. This approach effectively addresses the challenges posed by the inert nature of \u003cem\u003eh\u003c/em\u003e-BN at high temperatures, increasing nucleation sites and preventing film texturing. The effectiveness of this two-step growth approach is depicted in the surface morphologies of films grown at various 2nd step temperatures, illustrated in Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e1\u003c/span\u003eb. Since films nucleated below this temperature kept island structures even after high temperature annealing, 270\u0026deg;C was chosen as the 1st step growth temperature. For the second step, higher temperatures of 550\u0026deg;C and 570\u0026deg;C led to a flat and uniform surface morphology. However, at temperatures around 590\u0026deg;C, surface coverage decreased, likely due to the re-evaporation of In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films. Based on these observations, the optimal temperatures for the first and second steps were established at 270\u0026deg;C and 550\u0026ndash;570\u0026deg;C, respectively.\u003c/p\u003e \u003cp\u003eWe employed AFM to obtain atomic-scale surface information on the In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films. The AFM analysis revealed smooth terraces spanning an area of over 200 nm, indicative of a desirable growth behavior that produces atomically smooth films (Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e1\u003c/span\u003ec). Additionally, the AFM image displayed well-defined crystal facets in each domain, with a root mean square (RMS) roughness of 1.4 nm.\u003c/p\u003e \u003cp\u003eAtomic arrangement and interfacial quality of the In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e/\u003cem\u003eh\u003c/em\u003e-BN were analyzed by HR-STEM. Cross-sectional HR-STEM imaging illustrates a clean interface between In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e and \u003cem\u003eh\u003c/em\u003e-BN, free of any interfacial layers, cracks, or dislocations, with In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e exhibiting well-aligned growth directions parallel to the \u003cem\u003eh\u003c/em\u003e-BN substrate (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e2\u003c/span\u003ea). The composition at the interface was determined by TEM-energy dispersive X-ray spectroscopy (EDS) mapping, revealing atomic percentages of 40.2% indium and 59.8% tellurium, consistent with the stoichiometric composition of In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e, as depicted in Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e2\u003c/span\u003eb. Further stoichiometric characterization was conducted using Raman spectroscopy. As detailed in Fig. \u003cspan refid=\"MOESM1\" class=\"InternalRef\"\u003eS1\u003c/span\u003e, three prominent peaks were identified at 104, 125, and 142 cm\u003csup\u003e\u0026minus;\u0026thinsp;1\u003c/sup\u003e. These peaks are characteristic of the In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e crystal symmetry, specifically corresponding to the A\u003csub\u003e1g\u003c/sub\u003e and E\u003csub\u003eg\u003c/sub\u003e vibrational modes, respectively. These peaks highly correspond to the In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e. These results were consistent with Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e2\u003c/span\u003eb. This precise control of composition underscores the benefits of utilizing MBE for maintaining a clean interface.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eAs illustrated in Fig.\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e3\u003c/span\u003e, we utilized these In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e thin films grown on \u003cem\u003eh\u003c/em\u003e-BN for electronic device fabrication. Initially, Pd/Au bilayer contacts were deposited on In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e/\u003cem\u003eh\u003c/em\u003e-BN using e-beam evaporation to form ohmic contacts. Subsequently, the channel was defined through reactive ion etching (RIE) with chlorine gas, employing a negative tone resist.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eThe electrical characteristics of the back-gated In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e field-effect transistors (FETs) were evaluated by measuring the gate bias (V\u003csub\u003egs\u003c/sub\u003e)-dependent current (I\u003csub\u003eds\u003c/sub\u003e) curve. Normally, the back-gated In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e FETs are on, and as V\u003csub\u003egs\u003c/sub\u003e increases positively, Ids decreases. The threshold voltage is identified as V\u003csub\u003egs\u003c/sub\u003e\u0026thinsp;=\u0026thinsp;\u0026minus;\u0026thinsp;10 V, at which point the device is turned off (Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e4\u003c/span\u003ea). The output characteristics demonstrate that the back-gated In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e FETs function as typical \u003cem\u003ep\u003c/em\u003e-channel FETs. Unlike conventional FETs, there is no I\u003csub\u003eds\u003c/sub\u003e saturation observed, suggesting that traditional channel pinch-off and channel length modulation do not occur. The current gradually decreases as the gate voltage increases positively according to the \u003cem\u003eV\u003c/em\u003e\u003csub\u003e\u003cem\u003egs\u003c/em\u003e\u003c/sub\u003e\u003cem\u003e\u0026ndash;I\u003c/em\u003e\u003csub\u003e\u003cem\u003eds\u003c/em\u003e\u003c/sub\u003e curves for V\u003csub\u003eds\u003c/sub\u003e of 1 V (Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e4\u003c/span\u003ea). These transfer characteristics indicate typical \u003cem\u003ep\u003c/em\u003e-channel FETs behavior and operation in depletion mode. As V\u003csub\u003egs\u003c/sub\u003e increases, the current drastically drops approximately 10\u003csup\u003e\u0026minus;\u0026thinsp;10\u003c/sup\u003e A beyond \u0026minus;\u0026thinsp;16 V which is the back-gated In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e FETs\u0026rsquo; threshold voltage (V\u003csub\u003eth\u003c/sub\u003e). A high I\u003csub\u003emax\u003c/sub\u003e/I\u003csub\u003emin\u003c/sub\u003e ratio of 10\u003csup\u003e5\u003c/sup\u003e was observed.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eAnother important indicator of transistor performance is transconductance (g\u003csub\u003em\u003c/sub\u003e = dI\u003csub\u003eds\u003c/sub\u003e/dV\u003csub\u003egs\u003c/sub\u003e), which peaks at maximum values close to the subthreshold region at 28 nS \u0026micro;m\u003csup\u003e\u0026minus;\u0026thinsp;1\u003c/sup\u003e when V\u003csub\u003eds\u003c/sub\u003e was set to 1 V. The peak field-effect mobility, determined from the transconductance in the linear regime (V\u003csub\u003eds\u003c/sub\u003e = 1 V), was measured to be 6.07 cm\u0026sup2; V⁻\u0026sup1; s⁻\u0026sup1;, which is higher than in previous works. The subthreshold swing was 6 V dec⁻\u0026sup1;, and the gate leakage current was 10⁻\u003csup\u003e\u003cspan citationid=\"CR10\" class=\"CitationRef\"\u003e10\u003c/span\u003e\u003c/sup\u003eA (Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e4\u003c/span\u003eb). Compared to other \u003cem\u003ep\u003c/em\u003e-channel transistors fabricated using various methods and materials from the group III-VI chalcogenide family, our MBE-grown In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e demonstrates enhanced performance, making it more suitable for switching devices (Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e4\u003c/span\u003ec).\u003c/p\u003e \u003cp\u003eFurthermore, In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Schottky diodes were fabricated for potential applications in logic circuits alongside FETs. To evaluate their electrical properties, the \u003cem\u003eI\u0026ndash;V\u003c/em\u003e characteristics of the Ti/In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Schottky diodes were measured, forming a metal/semiconductor Schottky junction with a titanium (Ti) electrode (Fig.\u0026nbsp;\u003cspan refid=\"Fig6\" class=\"InternalRef\"\u003e5\u003c/span\u003ea). The \u003cem\u003eI\u0026ndash;V\u003c/em\u003e characteristic curve of the Ti/In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Schottky diodes shows a turn-on voltage of 1.34 V and a breakdown voltage of \u0026minus;\u0026thinsp;3 V (Fig.\u0026nbsp;\u003cspan refid=\"Fig6\" class=\"InternalRef\"\u003e5\u003c/span\u003eb). The observed rectifying behavior is attributed to the formation of a Schottky contact between the low work function of titanium (4.33 eV) and the p-type semiconductor behavior of In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e. A typical \u003cem\u003eI\u0026ndash;V\u003c/em\u003e characteristics of a Schottky diodes, can be described by the following equation:\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003e \u003cspan class=\"InlineEquation\"\u003e \u003cspan class=\"mathinline\"\u003e\\({I={I}_{s}\\text{e}\\text{x}\\text{p}(qV/nk}_{B}T\\)\u003c/span\u003e \u003c/span\u003e-1)\u003c/p\u003e \u003cp\u003ewhere k\u003csub\u003eB\u003c/sub\u003e​ is the Boltzmann constant, n is the ideality factor, T is the absolute temperature, and I\u003csub\u003es\u003c/sub\u003e​ is the saturation current of diodes. From the \u003cem\u003eI\u0026ndash;V\u003c/em\u003e curves, the rectifying ratio, ideality factor, and Schottky barrier height values were measured to be 514, 26.7, and 0.68 eV, respectively. These results demonstrated enhanced performance compared to previously reported In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e based Schottky diodes with lower reverse-bias leakage currents\u003csup\u003e\u003cspan citationid=\"CR17\" class=\"CitationRef\"\u003e17\u003c/span\u003e\u003c/sup\u003e. Such performance suggests that the diode can reliably function under reverse current flow, making it suitable for applications that demand minimal leakage, such as in high-frequency device applications.\u003c/p\u003e"},{"header":"Conclusions","content":"\u003cp\u003eWe have successfully fabricated \u003cem\u003ep\u003c/em\u003e-channel FETs and Schottky diode based on MBE-grown In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e. The two-step growth strategy employed resulting in full-coverage, atomically smooth In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films. Our In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films grown on \u003cem\u003eh\u003c/em\u003e-BN substrates has shown atomically clean interfaces by employing MBE for precise control over composition and phase. The electrical characteristics of the MBE-grown In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e FETs revealed a significant improvement, including enhanced mobility, reduced subthreshold swing, and a highly improved on/off ratio. Additionally, the \u003cem\u003eI\u003c/em\u003e\u0026ndash;\u003cem\u003eV\u003c/em\u003e characteristics of the Ti/In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Schottky diodes showed a low saturation current and higher barrier height, compared to previous In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e-based diodes. The high on-off ratio of the \u003cem\u003ep\u003c/em\u003e-channel FETs and the low saturation current of the Schottky diodes increase the versatility and the potential for group III-VI chalcogenide-based integrated circuits. These characteristics make MBE-grown In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e FETs and Schottky didoes useful in logic devices. We believe that this approach to preparing high-quality group III-VI chalcogenide thin films can be promising for next-generation electronics.\u003c/p\u003e"},{"header":"Declarations","content":"\u003cp\u003e \u003ch2\u003eConflict of interest\u003c/h2\u003e \u003cp\u003eThe authors declare no competing interests.\u003c/p\u003e \u003c/p\u003e\u003ch2\u003eAcknowledgments\u003c/h2\u003e \u003cp\u003eThis work was financially supported by National Research Foundation (NRF) of Korea (NRF-2021R1A5A1032996) and the Science Research Center (SRC) for Novel Epitaxial Quantum Architectures. This research was also supported by Basic Science Research Program through the NRF funded by the Ministry of Education (2021R1A6A1A10044154), NRF-2022R1A2C3007807, and NRF-2019M3D1A1079215. Additionally, we also acknowledge the Brain Korea 21-Plus Program, the Institute of Applied Physics (IAP). Research Institute of Advanced Materials (RIAM) at Seoul National University.\u003c/p\u003e"},{"header":"References","content":"\u003col\u003e\u003cli\u003e\u003cspan\u003eSi, M., Saha, A. K., Gao, S., Qiu, G., Qin, J., Duan, Y., Jian, J., Niu, C., Wang, H., Wu, W., Gupta, S. K. \u0026amp; Ye, P. D. A ferroelectric semiconductor field-effect transistor. (1928). doi:\u003cspan class=\"ExternalRef\"\u003e\u003cspan class=\"RefSource\"\u003e10.1038/s41928-019-0338-7\u003c/span\u003e\u003cspan address=\"10.1038/s41928-019-0338-7\" targettype=\"DOI\" class=\"RefTarget\"\u003e\u003c/span\u003e\u003c/span\u003e\u003c/span\u003e\u003c/li\u003e \u003cli\u003e\u003cspan\u003eSucharitakul, S., Goble, N. 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Thermoelectric properties of polycrystalline and  Articles You May Be Interested In Anisotropic optical and thermoelectric properties of In\u003csub\u003e4\u003c/sub\u003eSe\u003csub\u003e3\u003c/sub\u003e and In\u003csub\u003e4\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Thermoelectric properties of bipolar diffusion effect on In\u003csub\u003e4\u003c/sub\u003eSe\u003csub\u003e3\u0026thinsp;\u0026ndash;\u0026thinsp;x\u003c/sub\u003eTe\u003csub\u003ex\u003c/sub\u003e compounds. \u003cem\u003eAppl. Phys. Lett\u003c/em\u003e 96, 162108 (2010).\u003c/span\u003e\u003c/li\u003e \u003cli\u003e\u003cspan\u003eZhang, S., Zhang, J., Liu, B., Jia, X., Wang, G. \u0026amp; Chang, H. Large area growth of few-layer In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e films by chemical vapor deposition and its magnetoresistance properties. doi:\u003cspan class=\"ExternalRef\"\u003e\u003cspan class=\"RefSource\"\u003e10.1038/s41598-019-47520-x\u003c/span\u003e\u003cspan address=\"10.1038/s41598-019-47520-x\" targettype=\"DOI\" class=\"RefTarget\"\u003e\u003c/span\u003e\u003c/span\u003e\u003c/span\u003e\u003c/li\u003e \u003cli\u003e\u003cspan\u003eHuangfu, Y., Qin, B., Lu, P., Zhang, Q., Li, W., Liang, J., Liang, Z., Liu, J., Liu, M., Lin, X., Li, X., Saeed, M. Z., Zhang, Z., Li, J., Li, B. \u0026amp; Duan, X. Low Temperature Synthesis of 2D p-Type α-In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e with Fast and Broadband Photodetection. Small 2309620 (2024). doi:\u003cspan class=\"ExternalRef\"\u003e\u003cspan class=\"RefSource\"\u003e10.1002/SMLL.202309620\u003c/span\u003e\u003cspan address=\"10.1002/SMLL.202309620\" targettype=\"DOI\" class=\"RefTarget\"\u003e\u003c/span\u003e\u003c/span\u003e\u003c/span\u003e\u003c/li\u003e \u003cli\u003e\u003cspan\u003eLee, S., Kwon, Y. K., Kim, M. \u0026amp; Yi, G. C. Novel Polytype of III\u0026ndash;VI Metal Chalcogenides Nano Crystals Realized in Epitaxially Grown InTe. Small 2308925 (2024). doi:\u003cspan class=\"ExternalRef\"\u003e\u003cspan class=\"RefSource\"\u003e10.1002/SMLL.202308925\u003c/span\u003e\u003cspan address=\"10.1002/SMLL.202308925\" targettype=\"DOI\" class=\"RefTarget\"\u003e\u003c/span\u003e\u003c/span\u003e\u003c/span\u003e\u003c/li\u003e \u003cli\u003e\u003cspan\u003eDeiseroth, H. J. \u0026amp; M\u0026uuml;ller, H. D. Crystal structures of heptagallium decatelluride, Ga\u003csub\u003e7\u003c/sub\u003eTe\u003csub\u003e10\u003c/sub\u003e and heptaindium decatelluride, In\u003csub\u003e7\u003c/sub\u003eTe\u003csub\u003e10\u003c/sub\u003e. Zeitschrift fur Kristallographie - New Crystal Structures 210, 57\u0026ndash;58 (1995).\u003c/span\u003e\u003c/li\u003e \u003cli\u003e\u003cspan\u003ePark, J. Y., Lee, G. H., Jo, J., Cheng, A. K., Yoon, H., Watanabe, K., Taniguchi, T., Kim, M., Kim, P. \u0026amp; Yi, G. C. Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi\u003csub\u003e2\u003c/sub\u003eSe\u003csub\u003e3\u003c/sub\u003e thin films on hexagonal boron nitride. \u003cem\u003e2d Mater\u003c/em\u003e 3, (2016).\u003c/span\u003e\u003c/li\u003e \u003cli\u003e\u003cspan\u003eDonepudi, L., Sachdeva, R., Patel, P. B., Desai, R. R., Lakshminarayana, D., Panchal, C. J., Desai, M. S. \u0026amp; Padha, N. Barrier Inhomogeneities of Al/p-In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Thin Film Schottky Diodes. Article in Journal of Nano-and Electronic Physics 3, (2011).\u003c/span\u003e\u003c/li\u003e\u003c/ol\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":true,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":false,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"npg-asia-materials","isNatureJournal":false,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"am","sideBox":"Learn more about [NPG Asia Materials](http://www.nature.com/am/)","snPcode":"41427","submissionUrl":"https://mts-am.nature.com/cgi-bin/main.plex","title":"NPG Asia Materials","twitterHandle":"@asiamaterials","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature AJ","inReviewEnabled":true,"inReviewRevisionsEnabled":true},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-4499568/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-4499568/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eWe report on electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e grown on hexagonal boron nitride (\u003cem\u003eh\u003c/em\u003e-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to enhance surface coverage and large grain sizes for high-quality In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e. Scanning transmission electron microscopy (STEM) imaging demonstrated an atomically clean and abrupt interface between the In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e and \u003cem\u003eh\u003c/em\u003e-BN substrates. The MBE-grown In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e FETs exhibited superior electrical properties compared to previously reported In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e FETs, including a mobility of 6.07 cm\u0026sup2; V⁻\u0026sup1; s⁻\u0026sup1;, a subthreshold swing close to 6 V dec⁻\u0026sup1;, and an impressive on/off ratio of about 10⁵. Furthermore, the Ti/In\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e3\u003c/sub\u003e Schottky diodes exhibits a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV.\u003c/p\u003e","manuscriptTitle":"Molecular beam epitaxial In2Te3 electronic devices","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2024-06-25 20:16:13","doi":"10.21203/rs.3.rs-4499568/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"revise","date":"2024-08-12T09:10:23+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"This content is not available.","date":"2024-07-09T12:18:26+00:00","index":1,"fulltext":"This content is not available."},{"type":"reviewerAgreed","content":"This content is not available.","date":"2024-06-18T00:50:09+00:00","index":2,"fulltext":"This content is not available."},{"type":"reviewerAgreed","content":"This content is not available.","date":"2024-06-06T02:37:16+00:00","index":1,"fulltext":"This content is not available."},{"type":"reviewersInvited","content":"","date":"2024-06-06T00:27:57+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2024-05-30T13:55:40+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2024-05-30T00:55:32+00:00","index":"","fulltext":""},{"type":"submitted","content":"NPG Asia Materials","date":"2024-05-30T00:55:31+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"npg-asia-materials","isNatureJournal":false,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"am","sideBox":"Learn more about [NPG Asia Materials](http://www.nature.com/am/)","snPcode":"41427","submissionUrl":"https://mts-am.nature.com/cgi-bin/main.plex","title":"NPG Asia Materials","twitterHandle":"@asiamaterials","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature AJ","inReviewEnabled":true,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"0618ef66-366a-45e0-864a-0e94afd7e160","owner":[],"postedDate":"June 25th, 2024","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"published-in-journal","subjectAreas":[{"id":33425280,"name":"Physical sciences/Materials science/Materials for devices/Electronic devices"},{"id":33425281,"name":"Physical sciences/Nanoscience and technology/Nanoscale devices/Electronic devices"}],"tags":[],"updatedAt":"2024-11-22T08:08:25+00:00","versionOfRecord":{"articleIdentity":"rs-4499568","link":"https://doi.org/10.1038/s41427-024-00578-0","journal":{"identity":"npg-asia-materials","isVorOnly":false,"title":"NPG Asia Materials"},"publishedOn":"2024-11-22 05:00:00","publishedOnDateReadable":"November 22nd, 2024"},"versionCreatedAt":"2024-06-25 20:16:13","video":"","vorDoi":"10.1038/s41427-024-00578-0","vorDoiUrl":"https://doi.org/10.1038/s41427-024-00578-0","workflowStages":[]},"version":"v1","identity":"rs-4499568","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-4499568","identity":"rs-4499568","version":["v1"]},"buildId":"qtupq5eGEP_6zYnWcrvyt","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}