Design and Performance Analysis of GaAs-based DG JL VTFET for Ammonia Gas Sensing

Design and Performance Analysis of GaAs-based DG JL VTFET for Ammonia Gas Sensing | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Design and Performance Analysis of GaAs-based DG JL VTFET for Ammonia Gas Sensing Md. Sajjad Hossain, Md.Zahid Hasan This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-6743003/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 22 Aug, 2025 Read the published version in Silicon → Version 1 posted 9 You are reading this latest preprint version Abstract This study explores a Double Gate (DG) Junctionless Vertical Layer FET (JLVTFET)structure designed with catalytic essence as gate connections and anatomized for ammonia gas sensing. The perpendicular double-sided gate structure ensures improved gate controllability compared to conventional TFETs for band-to-band tunneling (BTBT). Then GaAs are introduced in the channel, improving device sensitivity performance because of its rich drugs like high electron mobility and band gap compared to conventional semiconductors. Silicon P-type pockets are formed near the source region by adjusting the work function values. The n-channel JLVTFET is analyzed for ammonia gas sensing using Cobalt (Co) and Molybdenum (Mo) as gate materials. The characteristics of the proposed device structure focus on the electric field, surface potential, energy band diagram, and I d -V characteristics, considering the adsorption of gas molecules. The presence of gas on the gate metal alters the work function, leading to variations in the Off-current (I off ) On-current (I on ), and threshold voltage (V th ), which are considered sensitivity parameters for detecting ammonia gas molecules. Additionally, the channel length and dielectric materials are varied to analyze their impact on the device's sensitivity. A comparison of Silicon-based and GaAs-based DG JL VTFET gas detectors reveals that the GaAs-based device exhibits enhanced sensitivity and an improved on/off current ratio. Simulation results show that these improvements occur by varying the work function of catalytic metal gates, Cobalt and Molybdenum, by 50, 100, 150, and 200 meV. Vertical TFET(VTFET) Junction-less Gate stack BTBT Gas molecule adsorption sensitivity Ammonia gas sensing Band-to-band tunneling (BTBT) Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 22 Aug, 2025 Read the published version in Silicon → Version 1 posted Editorial decision: Revision requested 01 Jul, 2025 Reviews received at journal 01 Jul, 2025 Reviewers agreed at journal 30 Jun, 2025 Reviews received at journal 30 Jun, 2025 Reviewers agreed at journal 30 Jun, 2025 Reviewers invited by journal 29 Jun, 2025 Editor assigned by journal 29 Jun, 2025 Submission checks completed at journal 29 Jun, 2025 First submitted to journal 25 May, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-6743003","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":479241533,"identity":"859faa17-36ff-4662-9bf4-acade04dd431","order_by":0,"name":"Md. 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The perpendicular double-sided gate structure ensures improved gate controllability compared to conventional TFETs for band-to-band tunneling (BTBT). Then GaAs are introduced in the channel, improving device sensitivity performance because of its rich drugs like high electron mobility and band gap compared to conventional semiconductors. Silicon P-type pockets are formed near the source region by adjusting the work function values. The n-channel JLVTFET is analyzed for ammonia gas sensing using Cobalt (Co) and Molybdenum (Mo) as gate materials. The characteristics of the proposed device structure focus on the electric field, surface potential, energy band diagram, and I\u003csub\u003ed\u003c/sub\u003e-V characteristics, considering the adsorption of gas molecules.\u003c/p\u003e \u003cp\u003eThe presence of gas on the gate metal alters the work function, leading to variations in the Off-current (I\u003csub\u003eoff\u003c/sub\u003e) On-current (I\u003csub\u003eon\u003c/sub\u003e), and threshold voltage (V\u003csub\u003eth\u003c/sub\u003e), which are considered sensitivity parameters for detecting ammonia gas molecules. Additionally, the channel length and dielectric materials are varied to analyze their impact on the device's sensitivity.\u003c/p\u003e \u003cp\u003eA comparison of Silicon-based and GaAs-based DG JL VTFET gas detectors reveals that the GaAs-based device exhibits enhanced sensitivity and an improved on/off current ratio. 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