Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET)

Abstract This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance. Attributes of the ETL, its thickness (tepi) and doping concentration (Nepi) are varied and their impact on device electrical parameters such as transfer characteristic, output performance, subthreshold swing (SS), and threshold voltage (VT) is highlighted. It is observed that both tepi and Nepi significantly influence the different electrical parameters of the ETL based TFET architecture.