Electric Hall Effect and Quantum Electric Hall Effect

Electric Hall Effect and Quantum Electric Hall Effect | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Electric Hall Effect and Quantum Electric Hall Effect Yugui Yao, Chaoxi Cui, Run-Wu Zhang, Yuhui Qiu, Yilin Han, Zhi-Ming Yu This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-6316681/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Exploring new Hall effect is always a fascinating research topic. The ordinary Hall effect and the quantum Hall effect, initially discovered in two-dimensional (2D) non-magnetic systems, are the phenomena that a trans verse current is generated when a system carrying an electron current is placed in a magnetic field perpendicular to the currents. In this work, we propose the electric counterparts of these two Hall effects, termed as electric Hall effect (EHE) and quantum electric Hall effect (QEHE). The EHE and QEHE emerge in 2D magnetic sys tems, where the transverse current is generated by applying an electric gate-field instead of a magnetic field. We present a symmetry requirement for intrinsic EHE and QEHE. With a weak gate-field, we establish an analytical expression of the intrinsic EHE coefficient. We show that it is determined by intrinsic band geometric quan tities: Berry curvature and its polarizability which consists of both intraband and interband layer polarization. Via first-principles calculations, we investigate the EHE in the monolayer Ca(FeN)2, where significant EHE coefficient is observed around band crossings. Furthermore, we demonstrate that the QEHE can appear in the semiconductor monolayer BaMn2S3, of which the Hall conductivity exhibits steps that take on the quantized values 0 and ±1 in the unit of e2 /h by varying the gate-field within the experimentally achievable range. Due to the great tunability of the electric gate-field, the EHE and QEHE proposed here can be easily controlled and should have more potential applications. Physical sciences/Physics/Condensed-matter physics/Electronic properties and materials Physical sciences/Physics/Condensed-matter physics/Quantum Hall Full Text Additional Declarations There is NO Competing Interest. Supplementary Files SM.pdf Supplemental material for “Electric Hall Effect and Quantum Electric Hall Effect” Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-6316681","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":441215037,"identity":"36addfd8-e8b3-41ed-94a3-df01cfd8483e","order_by":0,"name":"Yugui 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