Mobility in 3D Dirac semimetal (Cd3As2): quantum kinetic approach. | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Mobility in 3D Dirac semimetal (Cd 3 As 2 ): quantum kinetic approach. Konstantin L. Kovalenko, Sergei I. Kozlovskiy, Nicolai N. Sharan This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-9689004/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract A theoretical model for calculating the low-field electron mobility in a three-dimensional (3D) Dirac semimetal is presented. Analytical expressions for mobility are obtained on base of quantum kinetic approach. The basic concept of quantum kinetic approach is the one-particle density matrix. Screened acoustic, polar optic phonons and ionized impurities are considered as scattering mechanisms. Results of mobility calculations are compared with known experimental data for cadmium arsenide (Cd 3 As 2 ). Temperature dependence of electron mobility in cadmium arsenide at T < 40 K mobility is determined by the scattering of electrons by ionized impurities. At higher temperatures, the mobility is determined by scattering of electrons by acoustic and polar optical phonons, with the contribution of polar optical phonons being relatively small. Comparison of the calculation results with experimental data allows us to determine the coupling constant for scattering of electrons by acoustic phonons \(\Xi\) and energy optic phonons \({E_{PO}}=8\) meV. The values of the coupling constant \(\Xi\) differ for low ( \({N_I}=6 \times {10^{14}}\,c{m^{ - 3}}\) ) and heavily ( \({N_I}=1.55 \times {10^{18}}\,c{m^{ - 3}}\) ) doped cadmium arsenide crystals and are approximately 10 eV and 80 eV, respectively. We assume that in this case renormalization \(\Xi\) occurs with an increase in the density of ionized impurities. Computational Physics three dimensional Dirac materials cadmium arsenide electron mobility acoustic and polar optic phonons ionized impurities Full Text Additional Declarations The authors declare no competing interests. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-9689004","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":638837284,"identity":"a6f92afa-64a7-49cb-8b51-22d8bc7443f6","order_by":0,"name":"Konstantin L. Kovalenko","email":"","orcid":"","institution":"V.E. Lashkaryov Institute of Semiconductor Physics","correspondingAuthor":false,"prefix":"","firstName":"Konstantin","middleName":"L.","lastName":"Kovalenko","suffix":""},{"id":638840894,"identity":"fb489e4b-b06c-4e5b-8492-c9ada9f46561","order_by":1,"name":"Sergei I. 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