Direct thermal resistance measurment of a single ripplocation in graphite

Direct thermal resistance measurment of a single ripplocation in graphite | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Direct thermal resistance measurment of a single ripplocation in graphite Tianqi Bai, Tao Zhang, Songfeng Pei, Ruilin Mao, Fachen Liu, Jiade Li, and 6 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7433026/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Lattice defects in crystalline materials play a critical role in tuning thermal transport, with their properties being highly sensitive to atomic structure. However, characterizing such structure-property relationships is hampered by the challenges in directly measuring thermal properties at the single-defect level. Here, we use in-situ electron energy loss spectroscopy in scanning transmission electron microscopy (STEM–EELS) to characterize ripplocation boundaries (RBs)—unique kink-like topological defects inlayered crystalline solids (LCS) —revealing their atomic-scale lattice dynamic features and quantifying local thermal resistance. We find that the interlayer alternating strain field within ~ 5 nm of RBs broadens the phonon bands of out-of-plane and transverse acoustic modes, leading to enhanced phonon scattering and thereby a ~ three- to five-fold increase in local thermal resistance relative to defect-free regions. The obtained typical thermal resistance of ripplocations ranges from 4.69×10 − 11 to 8.06×10 − 11 m 2 K W − 1 , exhibiting monotonic dependence on bending angles. These findings establish a quantitative link among ripplocation atomic configurations, phonon features and thermal resistance, providing critical guidelines for defect thermal engineering in LCS. The in-situ characterization paradigm also paves the way for probing single defect thermal properties at the atomic scale. Nanoscience graphite ripplocation in-situ thermal resistance Full Text Additional Declarations The authors declare no competing interests. Supplementary Files SupplementaryInformation.docx Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7433026","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":504128102,"identity":"1a22b8a0-dbec-47cb-b2d4-9e21c0946c57","order_by":0,"name":"Tianqi Bai","email":"","orcid":"","institution":"","correspondingAuthor":false,"prefix":"","firstName":"Tianqi","middleName":"","lastName":"Bai","suffix":""},{"id":504128103,"identity":"338bf733-f771-4494-88c3-638c096e26e2","order_by":1,"name":"Tao 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However, characterizing such structure-property relationships is hampered by the challenges in directly measuring thermal properties at the single-defect level. Here, we use \u003cem\u003ein-situ\u003c/em\u003e electron energy loss spectroscopy in scanning transmission electron microscopy (STEM–EELS) to characterize ripplocation boundaries (RBs)—unique kink-like topological defects inlayered crystalline solids (LCS) —revealing their atomic-scale lattice dynamic features and quantifying local thermal resistance. We find that the interlayer alternating strain field within ~ 5 nm of RBs broadens the phonon bands of out-of-plane and transverse acoustic modes, leading to enhanced phonon scattering and thereby a ~ three- to five-fold increase in local thermal resistance relative to defect-free regions. 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