Combined Effects of TID Radiation and Electrical Stress on n-MOSFET Current Mirrors

The aim of this study is to present the combined effects of total ionizing dose (TID) radiation and electrical stress on the performance of n-MOSFET current mirrors. We propose a novel approach to analyze the complex interaction between these two factors by subjecting devices to different doses of TID and electrical stress. The results indicate that TID radiation gives rise to a threshold voltage shift and degradation in transconductance. Furthermore, we demonstrate that the combined effects of TID and electrical stress lead to a more significant degradation of current mirror characteristics than either stressor alone. These anomalies are explained as due mainly to charge trapping in the oxide layer. The work highlights the importance of considering both TID radiation and electrical stress in designing and qualifying high performance n-MOSFET current mirrors for radiation-hardened environments.