Process dependent strain behaviour, fractal analysis, and bonding network of nc-Si(SiC) thin films

Abstract Nanocrystalline silicon embedded silicon carbide, nc-Si(SiC) thin films were deposited on p-type silicon substrates by using a thermal chemical vapor deposition (CVD) with different process temperatures varied from 700-1000oC. The SEM images reveal the Si particles are embedded with SiC thin films. The estimated lattice-strainof nc-Si(SiC) thin films from Williamson-Hall and Scherer formula was varied from 0.00227 to 0.00469 and 0.000855 to 0.00574 respectively. The Raman signature at the 1346.19 cm− 1, 1491.78 cm− 1 and 1570.94 cm− 1 bonding correspond to D, G-Si and G peaks respectively. The estimated band gap from Tauc’s plot of nc-Si(SiC) thin films are 3.17 to 2.87 eV respectively with increasing of process temperature. The observed crystalline size of nc-Si in nc-Si(SiC) is from 21 nm to 27 nm from 700 to 1000 oC respectively. The possible bonding network of core-orbital of Si(2p), C(1s), and O(1s) in the C: ZnO thin films have been discussed by deconvolution with the Origin 2018.