Focused Ion Beam Induced Platinum Deposition with a Low Temperature Cesium Ion Source

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Abstract

In addition to precise milling, the deposition of material at a specific location on a sample surface is a frequently used process of Focused Ion Beam (FIB) systems. Here we report on the deposition of platinum with a new kind of cesium FIB in which the cesium ions are produced by a low-temperature ion source. The platinum was deposited at different acceleration voltages and ion beam currents. The deposition rate, the material composition and specific resistance were examined and compared with layers deposited at comparable settings with a standard gallium FIB. The deposition rate is found to be linearly dependent on current density. The rate is comparable for Cs+ and Ga+ under similar conditions, but the deposit has lower Pt content for Cs+. The specificresistance of the deposit is found to be higher for Cs+ than for Ga+, and decreasing with increasing acceleration voltage.
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Materials

chemistry Medicinal and pharmaceutical chemistry Nano- and molecular-scale electronics Nano-biomaterials and bioscience Nanomagnetics Nanomaterials, thin films and nanointerfaces Nanomedicine Nanometrology and nanomechanics Nano-optics Nanopatterning, self-assembly and nanofabrication Nanostructures for energy and sensing applications Natural products chemistry Organo main group chemistry Other nanotechnology (unclassified) Other organic chemistry (unclassified) Photochemistry and photovoltaics Physical organic chemistry Supramolecular chemistry In addition to precise milling, the deposition of material at a specific location on a sample surface is a frequently used process of Focused Ion Beam (FIB) systems. Here we report on the deposition of platinum with a new kind of cesium FIB in which the cesium ions are produced by a low-temperature ion source. The platinum was deposited at different acceleration voltages and ion beam currents. The deposition rate, the material composition and specific resistance were examined and compared with layers deposited at comparable settings with a standard gallium FIB. The deposition rate is found to be linearly dependent on current density. The rate is comparable for Cs+ and Ga+ under similar conditions, but the deposit has lower Pt content for Cs+. The specificresistance of the deposit is found to be higher for Cs+ than for Ga+, and decreasing with increasing acceleration voltage.

Keywords

focused ion beam (FIB); FIB induced deposition (FIBID); cesium ion source; cold atom ion source When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information: Loeber, T. H.; Laegel, B.; Bakan Misirlioglu, F.; Sezen, M.; Vredenbregt, E. J. D.; Li, Y. Beilstein Arch. 2025, 202512. doi:10.3762/bxiv.2025.12.v1 Citation data can be downloaded as file using the "Download" button or used for copy/paste from the text window below. Citation data in RIS format can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Zotero. © 2025 Loeber et al.; licensee Beilstein-Institut. This is an open access work licensed under the terms of the Beilstein-Institut Open Access License Agreement (https://www.beilstein-archives.org/xiv/terms), which is identical to the Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0). The reuse of material under this license requires that the author(s), source and license are credited. Third-party material in this work could be subject to other licenses (typically indicated in the credit line), and in this case, users are required to obtain permission from the license holder to reuse the material.

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