Comparative photoelectrochemical characteristics of heterostructure and composite films based on BiVO 4 andWO3

Abstract Films of heterostructure BiVO4/WO3, composite BiVO4 with WO3 and pure BiVO4 were obtained by electrochemical deposition. The analysis of the photoelectrochemical characteristics of such films showed that observed of changes in the photoelectrochemical parameters towards as the increase in photocurrent quantum yield and the decrease in overvoltage of oxygen evolution on the photoanode in the series of the pure BiVO4, heterojunction BiVO4/WO3 and composite BiVO4-WO3. The reason for such a positive effect in reducing the energy losses has associated with the decreases recombination of electrons and holes in the BiVO4 with WO3 composite as a result of the increase in the contact area of the two semiconductors BiVO4 with WO3 compared to the heterostructure. That to also contribute increase in the photoelectrocatalytic activity of the surface and the decrease in the electron transport resistance.