Configurable Writing of Ferroelectric Nanostructure for the Nonvolatile Memory and Encryption
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Abstract
Traditional nonvolatile memory technology’s reliance on single-dimension encryption poses significant security vulnerabilities. Herein, we demonstrate a template-free electron beam lithography (EBL) technique for ferroelectric nanostructures with dose-controllable ferroelectric domain, and use them for the nonvolatile memory and encryption. The obtained ferroelectric nanostructure could function simultaneously as an electron-beam read-only-memory (EB-ROM) by electron beam irradiation and a ferroelectric random-access-memory (FeRAM) by external electric field. By using properly irradiated electron beam, stable metastable phases consisted of ferroelectric phase and relaxor ferroelectric phase are formed in the irradiated P(VDF-TrFE) nanostructure, which possesses outstanding memory characteristics, such as, 2-fold reduction of power consuming, and 2000-fold enhancement of domain switching rate. Meanwhile, the effect of the defects induced by electron-beam irradiation on ferroelectric domain is well revealed by dynamic Monte Carlo (MC) simulations. Our systematic study provides a new avenue for developing next-generation memory devices in the flexible electronic fields.
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Abstract
Traditional nonvolatile memory technology’s reliance on single-dimension encryption poses significant security vulnerabilities. Herein, we demonstrate a template-free electron beam lithography (EBL) technique for ferroelectric nanostructures with dose-controllable ferroelectric domain, and use them for the nonvolatile memory and encryption. The obtained ferroelectric nanostructure could function simultaneously as an electron-beam read-only-memory (EB-ROM) by electron beam irradiation and a ferroelectric random-access-memory (FeRAM) by external electric field. By using properly irradiated electron beam, stable metastable phases consisted of ferroelectric phase and relaxor ferroelectric phase are formed in the irradiated P(VDF-TrFE) nanostructure, which possesses outstanding memory characteristics, such as, 2-fold reduction of power consuming, and 2000-fold enhancement of domain switching rate. Meanwhile, the effect of the defects induced by electron-beam irradiation on ferroelectric domain is well revealed by dynamic Monte Carlo (MC) simulations. Our systematic study provides a new avenue for developing next-generation memory devices in the flexible electronic fields.
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Yingxin Chen, Yijing Nie, Huigui Fang, et al.
Configurable Writing of Ferroelectric Nanostructure for the Nonvolatile Memory and Encryption. Authorea. 22 September 2025.
DOI: https://doi.org/10.22541/au.175851374.49487619/v1
DOI: https://doi.org/10.22541/au.175851374.49487619/v1
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