Device post-annealing with superficially Ag-modified absorber for high-efficiency Cd-free Cu2ZnSnS4 solar cells

Device post-annealing with superficially Ag-modified absorber for high-efficiency Cd-free Cu2ZnSnS4 solar cells | Authorea try { document.documentElement.classList.add('js'); } catch (e) { } var _gaq = _gaq || []; _gaq.push(['_setAccount', 'G-8VDV14Y67G']); _gaq.push(['_trackPageview']); (function() { var ga = document.createElement('script'); ga.type = 'text/javascript'; ga.async = true; ga.src = ('https:' == document.location.protocol ? 'https://ssl' : 'http://www') + '.google-analytics.com/ga.js'; var s = document.getElementsByTagName('script')[0]; s.parentNode.insertBefore(ga, s); })(); Skip to main content Preprints Collections Wiley Open Research IET Open Research Ecological Society of Japan All Collections About About Authorea FAQs Contact Us Quick Search anywhere Search for preprint articles, keywords, etc. Search Search ADVANCED SEARCH SCROLL This is a preprint and has not been peer reviewed. Data may be preliminary. 25 July 2025 V1 Latest version Share on Device post-annealing with superficially Ag-modified absorber for high-efficiency Cd-free Cu2ZnSnS4 solar cells Authors : Xiaojie Yuan 0000-0001-8299-4050 , Jialiang Huang , Jianjun Li , Kaiwen Sun , Ao Wang , and Xiaojing Hao 0000-0003-1973-2060 [email protected] Authors Info & Affiliations https://doi.org/10.22541/au.175346283.39162781/v1 267 views 169 downloads Contents Abstract Supplementary Material Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract Cation substitution is a promising research direction for further improving device performance of Cu2ZnSnS4 (CZTS) solar cells by mitigating recombination loss at deep-level defects. Herein, a superficial Ag2ZnSnS4 (AZTS) modification process on pre-sulfurized co-sputtered CZTS precursor is employed for reducing the interfacial deep-level defects in CZTS and fabricating single-layer absorber and increasing the minority carrier lifetime. Results show that the open-circuit voltage and short-circuit current density of CZTS are increased after the modification, though the FF is decreased due to a reduced carrier density of CZTS and degraded junction electric field. With post- device air annealing process, the poor junction quality of the AZTS-modified CZTS can be recovered without introduction of extra interfacial deep-level defects. An encouraging efficiency of 10.50% with a remarkably high short-circuit current density of 22.9 mA cm-2 is achieve with anti-reflecting coating. This study demonstrates a unique method for reducing interfacial and bulk recombination loss while improving the junction quality of CZTS, which can help in designing strategies for improving the VOC and FF of CZTS. Supplementary Material File (figure 1.wmf) Download 4.51 MB File (figure 2.wmf) Download 8.90 MB File (figure 3.wmf) Download 9.05 MB File (figure 4.wmf) Download 1.31 MB File (figure 5.wmf) Download 325.45 KB File (figure 6.wmf) Download 636.25 KB File (figure 7.wmf) Download 105.00 KB File (manuscript.pdf) Download 370.31 KB Information & Authors Information Version history V1 Version 1 25 July 2025 Copyright This work is licensed under a Non Exclusive No Reuse License. Keywords carrier collection defect engineering device annealing grain growth kesterite solar cells Authors Affiliations Xiaojie Yuan 0000-0001-8299-4050 University of New South Wales - Kensington Campus View all articles by this author Jialiang Huang University of New South Wales View all articles by this author Jianjun Li University of New South Wales - Kensington Campus View all articles by this author Kaiwen Sun University of New South Wales View all articles by this author Ao Wang University of New South Wales View all articles by this author Xiaojing Hao 0000-0003-1973-2060 [email protected] University of New South Wales View all articles by this author Metrics & Citations Metrics Article Usage 267 views 169 downloads .FvxKWukQNSOunydq8rnd { width: 100px; } Citations Download citation Xiaojie Yuan, Jialiang Huang, Jianjun Li, et al. Device post-annealing with superficially Ag-modified absorber for high-efficiency Cd-free Cu2ZnSnS4 solar cells. Authorea . 25 July 2025. DOI: https://doi.org/10.22541/au.175346283.39162781/v1 If you have the appropriate software installed, you can download article citation data to the citation manager of your choice. Simply select your manager software from the list below and click Download. For more information or tips please see 'Downloading to a citation manager' in the Help menu . Format Please select one from the list RIS (ProCite, Reference Manager) EndNote BibTex Medlars RefWorks Direct import Tips for downloading citations document.getElementById('citMgrHelpLink').addEventListener('click', function() { popupHelp(this.href); return false; }); $(".js__slcInclude").on("change", function(e){ if ($(this).val() == 'refworks') $('#direct').prop("checked", false); $('#direct').prop("disabled", ($(this).val() == 'refworks')); }); View Options View options PDF View PDF Figures Tables Media Share Share Share article link Copy Link Copied! Copying failed. 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