Overlapped Gate-Source/Drain H-shaped TFET: Proposal, Design and Linearity Analysis

Abstract In this paper, the proposed design of H-shaped TFET has been discussed. This design is providing a high Ion/Ioff ratio with better Ion. HfO2 is used for better tunneling current. With this device, Different parameters such as unit parameter, analogue parameter, and linearity parameter have been studied and investigated the output of the H-TFET. As unit parameters, the electric field, electric potential, energy band diagram, and non-local band-to-band tunneling rate (BTBT) have all been observed. Second and third-order harmonics distortion (HD2, HD3), third-order current intercept point (IIP3), third-order intermodulation distortions (IMD3), and second and third-order voltage intercept point (VIP2, VIP3) are evaluated as linearity parameters that characterize the device's distortions and linearity. We obtained Ion\({\text{=1.6×}10}^{-4}\) A/µm, Ioff=2.1\({\text{×}10}^{-19}\) A/µm, Ion /Ioff=7.6\({\text{×}10}^{14}\),threshold voltage Vt=0.3449 V. © 2017 Elsevier Inc. All rights reserved.