Electrical Carrier Transport in Thin Silicon Layers Heavy Doped With Antimony

Electrical Carrier Transport in Thin Silicon Layers Heavy Doped With Antimony | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Electrical Carrier Transport in Thin Silicon Layers Heavy Doped With Antimony Alexander K. Fedotov, Victoria I. Golovchuk, Julia A. Fedotova, and 6 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4957878/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract In the present paper we report upon the influence of heavy doping of thin Si layers with Sb on the carrier transport in the temperature range 2 < T < 300 K and magnetic field induction (B) up to 9 T. Temperature and magnetic field dependencies of the longitudinal (ρxx(T,B)/σxx(T,B)) and transversal Hall (ρxy(T,B)/σxy(T,B)) components of tensor resistivity/conductivity were measured in the samples prepared by epitaxial technology and containing Sb atoms with densities near the concentration of Mott transition 1.05×1024 ≤NSb ≤ 4.0×1024 m-3. The use of normal contributions to ρxx(T,B)/σxx(T,B) and ρxy(T,B)/σxy(T,B) made it possible to estimate the concentrations and mobilities of charge carriers (electrons) depending on Sb content NSb, concentrations of localized surface states (LSS) 1×1018 ≤NS ≤5.6×1019 m-2 and disorder parameter 1 ≤ kFl ≤ 60 of Si layers, where kF and l being the wave vector and the mean free path of electrons, respectively. It was found that the relative longitudinal MRxx(T,B) = Δρxx(T,B)/ρxx(T,0) and the transversal MRxу(T,B) = Δρxу(T,B)/ρxy(T,0) magnetoresistive effects were significantly dependent both on the type of samples (NSb below or beyond the Mott transition) and on the presence/absence of LSS in them (for locked samples with the lowest NS covered with undoped Si layer or unlocked samples with the highest NS, respectively). In unlocked (with a great content of LSS) semiconductor-type samples, the values of MRxx(T,B) and MRxу(T,B) were positive at all temperatures (which is mainly due to the Lorentzian motion of electrons in a magnetic field). In the locked semiconductor type sample and in the unlocked metal-like sample, MRxx(T,B) and MRxу(T,B) became negative either in the entire region 2 < T < 30 K (locked) or only below 7 K (unlocked) . In this case, the normal longitudinal component of the conductivity tensor in zero and non-zero magnetic field included contributions from quantum corrections to Drude carrier transport (interference and the effect of electron-electron interaction and spin-dependent contributions with times of wave functions phase breaking of electrons tφ of the order of 2 - 100 picoseconds and coherent lengths (Thouless lengths) of ~ 20 - 400 nm) and the anomalous one including different types of spin-dependent effects (due to spin-orbit and spin-spin interactions, as well as intrinsic or asymmetric skew scatterings of free electron spins on paramagnetic Sb ions). Physical sciences/Nanoscience and technology Physical sciences/Physics Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4957878","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":364045964,"identity":"eb2bef9e-1c1f-44f4-9451-35202fe7caaa","order_by":0,"name":"Alexander K. Fedotov","email":"","orcid":"","institution":"Institute for Nuclear Problems of Belarusian State University","correspondingAuthor":false,"prefix":"","firstName":"Alexander","middleName":"K.","lastName":"Fedotov","suffix":""},{"id":364045965,"identity":"1cfa2485-6681-4d55-84ba-9b91d2479f5b","order_by":1,"name":"Victoria I. 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Temperature and magnetic field dependencies of the longitudinal (ρxx(T,B)/σxx(T,B)) and transversal Hall (ρxy(T,B)/σxy(T,B)) components of tensor resistivity/conductivity were measured in the samples prepared by epitaxial technology and containing Sb atoms with densities near the concentration of Mott transition 1.05×1024 ≤NSb ≤ 4.0×1024 m-3. The use of normal contributions to ρxx(T,B)/σxx(T,B) and ρxy(T,B)/σxy(T,B) made it possible to estimate the concentrations and mobilities of charge carriers (electrons) depending on Sb content NSb, concentrations of localized surface states (LSS) 1×1018 ≤NS ≤5.6×1019 m-2 and disorder parameter 1 ≤ kFl ≤ 60 of Si\u003cSb\u003e layers, where kF and l being the wave vector and the mean free path of electrons, respectively. It was found that the relative longitudinal MRxx(T,B) = Δρxx(T,B)/ρxx(T,0) and the transversal MRxу(T,B) = Δρxу(T,B)/ρxy(T,0) magnetoresistive effects were significantly dependent both on the type of samples (NSb below or beyond the Mott transition) and on the presence/absence of LSS in them (for locked samples with the lowest NS covered with undoped Si layer or unlocked samples with the highest NS, respectively). In unlocked (with a great content of LSS) semiconductor-type samples, the values of MRxx(T,B) and MRxу(T,B) were positive at all temperatures (which is mainly due to the Lorentzian motion of electrons in a magnetic field). In the locked semiconductor type sample and in the unlocked metal-like sample, MRxx(T,B) and MRxу(T,B) became negative either in the entire region 2 \u003c T \u003c 30 K (locked) or only below 7 K (unlocked) . In this case, the normal longitudinal component of the conductivity tensor in zero and non-zero magnetic field included contributions from quantum corrections to Drude carrier transport (interference and the effect of electron-electron interaction and spin-dependent contributions with times of wave functions phase breaking of electrons tφ of the order of 2 - 100 picoseconds and coherent lengths (Thouless lengths) of ~ 20 - 400 nm) and the anomalous one including different types of spin-dependent effects (due to spin-orbit and spin-spin interactions, as well as intrinsic or asymmetric skew scatterings of free electron spins on paramagnetic Sb ions).","manuscriptTitle":"Electrical Carrier Transport in Thin Silicon Layers Heavy Doped With Antimony","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2024-10-10 06:52:13","doi":"10.21203/rs.3.rs-4957878/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"0aef2872-fb3e-4e39-8b5a-b36efcd9d704","owner":[],"postedDate":"October 10th, 2024","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":38769372,"name":"Physical sciences/Nanoscience and technology"},{"id":38769373,"name":"Physical sciences/Physics"}],"tags":[],"updatedAt":"2024-11-29T09:53:37+00:00","versionOfRecord":[],"versionCreatedAt":"2024-10-10 06:52:13","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-4957878","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-4957878","identity":"rs-4957878","version":["v1"]},"buildId":"qtupq5eGEP_6zYnWcrvyt","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}