The Effect of Doping Thiourea In CdO Thin Films For Electronic Applications

Abstract Cadmium oxide (CdO) and Thiourea (Th) doped CdO thin films were deposited on soda lime glass (SLG) and crystalline p-type Si (100) substrates for various Th doping concentrations (0.3, 0.5, 0.7 at.%) using spin coating method. Some structural parameters such as the crystallite size, lattice constant, dislocation density (δ) and strain in the films were obtained from XRD analysis in which the polycrystalline structure with cubic nature and (111) prefential orientation was confirmed. CdO thin film has not shown any change in crystal phase after Th doping. The optical study emerged that the Th doping caused important changes in the transmittance, absorbance and reflectance spectra. A maximum optical transmittance (above 80%) have been obtained for 0.3% Th doped CdO thin films. Th doped CdO/p-Si heterojunctions exhibited low rectifying character and were not found to be the light sensitive.