Effect of Si on the performance of amorphous In-Zn-O thin film transistor and logic circuits application Tunability of the performance of SIZO TFT by controlling Si content in IZO system

Effect of Si on the performance of amorphous In-Zn-O thin film transistor and logic circuits application Tunability of the performance of SIZO TFT by controlling Si content in IZO system | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Effect of Si on the performance of amorphous In-Zn-O thin film transistor and logic circuits application Tunability of the performance of SIZO TFT by controlling Si content in IZO system Sunjin Lee, Tae Ho Kim, Sang Ji Kim, Sang Yeol Lee This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-6344514/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 27 Jun, 2025 Read the published version in Silicon → Version 1 posted 7 You are reading this latest preprint version Abstract The effect of silicon (Si) content in the indium-zinc-oxide (IZO) system on the electrical characteristics of thin-film transistors (TFTs) has been investigated depending on various Si ratios. The SiInZnO (SIZO) TFTs exhibited excellent performance, with field-effect mobility exceeding 28cm2V-1s-1, a subthreshold slope of 0.506 V-decade-1, and an on/off current ratio over 108. As Si content increased, the number of defect states decreased, resulting in enhanced threshold voltage stability and reduced subgap states, improving both mobility and bias stability. Amorphous Oxide Semiconductor(AOS) electrical properties are affected by oxygen vacancies(Vo) in the channel layer. These findings suggest that SIZO TFTs are promising for next-generation flexible electronics. NOT, NAND, and NOR logic circuits have been implemented simply by modulating the Si ratio on the channel layer, an excellent voltage gain was obtained using SIZO TFTs. Amorphous oxide semiconductor Thin film transistor Oxgyen suppressor Logic circuits Density of State Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 27 Jun, 2025 Read the published version in Silicon → Version 1 posted Editorial decision: Revision requested 15 May, 2025 Reviews received at journal 14 May, 2025 Reviewers agreed at journal 14 May, 2025 Reviewers invited by journal 14 May, 2025 Editor assigned by journal 09 Apr, 2025 Submission checks completed at journal 09 Apr, 2025 First submitted to journal 31 Mar, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-6344514","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":457007438,"identity":"a885c59e-45aa-47af-970e-265c6e4642ad","order_by":0,"name":"Sunjin Lee","email":"","orcid":"","institution":"Gachon University","correspondingAuthor":false,"prefix":"","firstName":"Sunjin","middleName":"","lastName":"Lee","suffix":""},{"id":457007439,"identity":"d271f008-2789-467f-8648-a37e0b0bf509","order_by":1,"name":"Tae Ho Kim","email":"","orcid":"","institution":"Gachon University","correspondingAuthor":false,"prefix":"","firstName":"Tae","middleName":"Ho","lastName":"Kim","suffix":""},{"id":457007440,"identity":"6b2c42fb-c8a3-4055-a877-308aa2e92e11","order_by":2,"name":"Sang Ji Kim","email":"","orcid":"","institution":"Gachon University","correspondingAuthor":false,"prefix":"","firstName":"Sang","middleName":"Ji","lastName":"Kim","suffix":""},{"id":457007441,"identity":"c5f59fdb-725b-4374-b9c1-acd3727b8ab6","order_by":3,"name":"Sang Yeol Lee","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABBElEQVRIiWNgGAWjYFAC5gYGhgoJOTZ2IM3YABGD0TgASPqMjTE/zwFStDC2pSXOnJFApBb5GYmNDz6wHWbccPP5xQ8/d9jkMbAffsA4cw9uLQY3EpsNZ/AcZja4nVMs2XsmrZiBJ82AccMzPFokEtukeSQOswG1JEgzth1ObGDIYWB8cACvw9p//zE4zGNw80zyb7AW/jf4tTDcSGxjZkhIk5CcwX4MYosE0JYNeLQYnHnYLNlzwMaAnyeHzbIXGHRtEs8MDs7A57D25IMffv6TqG9jP/74xs82m8R+/uSHD3vwOUwgAcbiMQBTbECMTwMDAz9cmv0BXoWjYBSMglEwcgEAGNdcAetE5nQAAAAASUVORK5CYII=","orcid":"","institution":"Gachon University","correspondingAuthor":true,"prefix":"","firstName":"Sang","middleName":"Yeol","lastName":"Lee","suffix":""}],"badges":[],"createdAt":"2025-03-31 11:53:15","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-6344514/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-6344514/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1007/s12633-025-03359-8","type":"published","date":"2025-06-27T15:56:59+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":85686162,"identity":"e275b52f-732f-4899-85af-a904e9e6da08","added_by":"auto","created_at":"2025-06-30 16:04:06","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":3402765,"visible":true,"origin":"","legend":"","description":"","filename":"SiliconSIZOTFT1.pdf","url":"https://assets-eu.researchsquare.com/files/rs-6344514/v1_covered_0ab542a6-ccf5-4482-a58f-70da5fbd391a.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Effect of Si on the performance of amorphous In-Zn-O thin film transistor and logic circuits application Tunability of the performance of SIZO TFT by controlling Si content in IZO system","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"silicon","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scon","sideBox":"Learn more about [Silicon](https://www.springer.com/journal/12633)","snPcode":"12633","submissionUrl":"https://submission.nature.com/new-submission/12633/3","title":"Silicon","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"Amorphous oxide semiconductor, Thin film transistor, Oxgyen suppressor, Logic circuits, Density of State","lastPublishedDoi":"10.21203/rs.3.rs-6344514/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-6344514/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"The effect of silicon (Si) content in the indium-zinc-oxide (IZO) system on the electrical characteristics of thin-film transistors (TFTs) has been investigated depending on various Si ratios. The SiInZnO (SIZO) TFTs exhibited excellent performance, with field-effect mobility exceeding 28cm2V-1s-1, a subthreshold slope of 0.506 V-decade-1, and an on/off current ratio over 108. As Si content increased, the number of defect states decreased, resulting in enhanced threshold voltage stability and reduced subgap states, improving both mobility and bias stability. Amorphous Oxide Semiconductor(AOS) electrical properties are affected by oxygen vacancies(Vo) in the channel layer. These findings suggest that SIZO TFTs are promising for next-generation flexible electronics. NOT, NAND, and NOR logic circuits have been implemented simply by modulating the Si ratio on the channel layer, an excellent voltage gain was obtained using SIZO TFTs.","manuscriptTitle":"Effect of Si on the performance of amorphous In-Zn-O thin film transistor and logic circuits application Tunability of the performance of SIZO TFT by controlling Si content in IZO system","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-05-16 07:25:52","doi":"10.21203/rs.3.rs-6344514/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"Revision requested","date":"2025-05-15T09:55:43+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2025-05-15T03:53:13+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"259384998123715457223949083259677048171","date":"2025-05-14T08:02:22+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2025-05-14T07:19:26+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2025-04-10T00:54:59+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2025-04-10T00:53:35+00:00","index":"","fulltext":""},{"type":"submitted","content":"Silicon","date":"2025-03-31T11:41:04+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"silicon","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scon","sideBox":"Learn more about [Silicon](https://www.springer.com/journal/12633)","snPcode":"12633","submissionUrl":"https://submission.nature.com/new-submission/12633/3","title":"Silicon","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"ac5e6d8c-adc6-419c-b48e-a41ab9fbbd22","owner":[],"postedDate":"May 16th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"published-in-journal","subjectAreas":[],"tags":[],"updatedAt":"2025-06-30T15:59:47+00:00","versionOfRecord":{"articleIdentity":"rs-6344514","link":"https://doi.org/10.1007/s12633-025-03359-8","journal":{"identity":"silicon","isVorOnly":false,"title":"Silicon"},"publishedOn":"2025-06-27 15:56:59","publishedOnDateReadable":"June 27th, 2025"},"versionCreatedAt":"2025-05-16 07:25:52","video":"","vorDoi":"10.1007/s12633-025-03359-8","vorDoiUrl":"https://doi.org/10.1007/s12633-025-03359-8","workflowStages":[]},"version":"v1","identity":"rs-6344514","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-6344514","identity":"rs-6344514","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}