Ant Lion Optimizer for Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors

A mathematical model and experimental analysis of the effect of oxide thickness on ambient conduction is provided in the Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB-CNTFET). To develop them as the future of IC (integrated circuit) technology, the suppression of ambipolar behaviour in SB-CNTFET is imperative. The ambipolar nature of SB-CNTFET contributes to a high amount of leakage current. tox ≈ 49.91 mm uses a dielectric of gate oxide with a thickness to inhibit the ambipolar behaviour. In an SB-CNTFET, the conductance is regulated by the electrical field at the source/drain contacts and the band bending length at the contacts is determined by t ox . Therefore, the prime parameter t ox that affects the Schottky barrier width and the subthreshold area. The suppression of ambipolar property is presented through experimental analysis. The SB-CNTFET is produced using high-k dielectrics such as Zirconium dioxide. This work discusses the suppression of ambipolar activity in SB-CNTFETs without reducing the I on current using an appropriate dielectric with optimum thickness.