Electrophysical Properties of Al-pge(P-i-n)-au and Au-nsi-al Structural Detectors Prepared on the Basis of Si and Ge

Electrophysical Properties of Al-pge(P-i-n)-au and Au-nsi-al Structural Detectors Prepared on the Basis of Si and Ge | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Electrophysical Properties of Al-pge(P-i-n)-au and Au-nsi-al Structural Detectors Prepared on the Basis of Si and Ge Maripov Ilhom This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5934998/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract The scientific significance of the research results is that the energetic properties of Si and Ge , which are the main elements for the preparation of semiconductor detectors based on the Al-pGe(p-i-n)-Au and Au-nSi-Al structures that reflect α and β radiation, and the electrophysical characteristics of the detectors were studied. Such results are explained by their importance in the practical application of various semiconductor devices. The practical significance of the research results lies in the development and implementation of detectors with Al-pGe(p-i-n)-Au and Au-nSi-Al structures based on semiconductor monocrystalline silicon and germanium. Hard Condensed-matter Physics detector heterostructure gamma quantum spectrum charge electron semiconductor crystal ionization chamber recombination electric field Full Text Additional Declarations The authors declare no competing interests. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-5934998","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":409463679,"identity":"d039988e-77ad-46dd-85c4-79e591e254c9","order_by":0,"name":"Maripov Ilhom","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAsElEQVRIiWNgGAWjYBACNhCRAMT87IwNJGqRbAZqOUCSdQaHgQRRWvjEDj/78HCHTeLmw8zNnz8w3Esk6Dw26TTjGYln0hK3HWZskzjAUEyMlgRjhsS2w8ZmQC1AhyUQoyX9M1iLcTNj8wciteSAbZEzYGZskCBWSzED0C9yEiC/nDFIMCaoRX52+mbGnztsePjb2x9/qKhIkCWoBQwQ8W5AlHoULaNgFIyCUTAKsAAA+EI5+Er2XfIAAAAASUVORK5CYII=","orcid":"https://orcid.org/0009-0005-1683-2260","institution":"Физика- Техника","correspondingAuthor":true,"prefix":"","firstName":"Maripov","middleName":"","lastName":"Ilhom","suffix":""}],"badges":[],"createdAt":"2025-01-31 09:12:08","currentVersionCode":1,"declarations":{"humanSubjects":false,"vertebrateSubjects":true,"conflictsOfInterestStatement":false,"humanSubjectEthicalGuidelines":false,"humanSubjectConsent":false,"humanSubjectClinicalTrial":false,"humanSubjectCaseReport":false,"vertebrateSubjectEthicalGuidelines":true},"doi":"10.21203/rs.3.rs-5934998/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-5934998/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":75286752,"identity":"762a7508-a6e4-495d-b7b5-d2c3c9d9a4b1","added_by":"auto","created_at":"2025-02-03 04:40:41","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":435067,"visible":true,"origin":"","legend":"","description":"","filename":"TayyorInglizchaMaqola1.pdf","url":"https://assets-eu.researchsquare.com/files/rs-5934998/v1_covered_1ced6869-045a-4e3f-8ec6-40b6a3cf7654.pdf"}],"financialInterests":"The authors declare no competing interests.","formattedTitle":"\u003cp\u003e\u003cstrong\u003eElectrophysical Properties of Al-pge(P-i-n)-au and Au-nsi-al Structural Detectors Prepared on the Basis of Si and Ge\u003c/strong\u003e\u003c/p\u003e","fulltext":[],"fulltextSource":"","fullText":"","funders":[{"identity":"021cdb25-4723-4427-8753-4e19d4eed89b","identifier":"10.13039/100000061","name":"Fogarty International Center","awardNumber":"122","order_by":0}],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"Institutul de Fizică Atomică","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"detector, heterostructure, gamma quantum, spectrum, charge, electron, semiconductor, crystal, ionization chamber, recombination, electric field","lastPublishedDoi":"10.21203/rs.3.rs-5934998/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-5934998/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eThe scientific significance of the research results is that the energetic properties of \u003cstrong\u003eSi\u003c/strong\u003e and \u003cstrong\u003eGe\u003c/strong\u003e, which are the main elements for the preparation of semiconductor detectors based on the \u003cstrong\u003eAl-pGe(p-i-n)-Au\u003c/strong\u003eand \u003cstrong\u003eAu-nSi-Al\u003c/strong\u003e structures that reflect \u003cstrong\u003eα\u003c/strong\u003e and \u003cstrong\u003eβ\u003c/strong\u003e radiation, and the electrophysical characteristics of the detectors were studied. Such results are explained by their importance in the practical application of various semiconductor devices. The practical significance of the research results lies in the development and implementation of detectors with \u003cstrong\u003eAl-pGe(p-i-n)-Au\u003c/strong\u003eand \u003cstrong\u003eAu-nSi-Al\u003c/strong\u003e structures based on semiconductor monocrystalline silicon and germanium.\u003c/p\u003e","manuscriptTitle":"Electrophysical Properties of Al-pge(P-i-n)-au and Au-nsi-al Structural Detectors Prepared on the Basis of Si and Ge","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-02-03 04:24:32","doi":"10.21203/rs.3.rs-5934998/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"41025178-499b-4dc8-947e-a1b265776ad6","owner":[],"postedDate":"February 3rd, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":43739995,"name":"Hard Condensed-matter Physics"}],"tags":[],"updatedAt":"2025-02-03T04:24:32+00:00","versionOfRecord":[],"versionCreatedAt":"2025-02-03 04:24:32","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-5934998","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-5934998","identity":"rs-5934998","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}