Propagation of Thermoelastic Waves for a Rotating Semiconductor Material Subjected to Laser Beam and Initial Stress Effect

Propagation of Thermoelastic Waves for a Rotating Semiconductor Material Subjected to Laser Beam and Initial Stress Effect | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Propagation of Thermoelastic Waves for a Rotating Semiconductor Material Subjected to Laser Beam and Initial Stress Effect Rania R. Yahya, AM Abd-Alla This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7586193/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract This study presents a novel photo-thermoelastic-mechanical framework for examining how waves move through elastic semiconductor materials. An elastic silicon (Si) medium is a half space, exposed to rotation, initial stress and laser pulse time photothermal excitation and thermal stress waves. The model incorporates the interaction between plasma and thermoelastic wave phenomena, analyzed within the framework of the Green and Naghdi's model type III of thermoelasticity theory. The proposed formulation is implemented for a semi- infinite half space domain. An eigenvalue approach analysis technique is employed to investigate their influence on the waves. Solving the two- dimensional problem involves employing the normal mode method. Fundamental physical parameters are determined based on mechanical stress, plasma conditions, thermal conditions. We obtain the field variables for a generic semi-conductor material in series form. We utilized MATLAB to plot the variation of physical variables, namely displacement components, the plasma distribution (the phase of carrier density), and temperature distribution with various parameters. The interaction between mechanical and thermal reactions is shown by graphic representations that show the changes in displacement and stress fields. These results offer important new information for the design of sophisticated engineering materials for thermoelastic applications as well as for the investigation of temperature, displacement, and stress. Physical sciences/Engineering Physical sciences/Materials science Physical sciences/Physics Plasma Green and Naghdi’s model (III) relaxation times semi- conductors normal mode method Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7586193","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":524164630,"identity":"200e06da-e2aa-4629-afa5-150954e0f3ad","order_by":0,"name":"Rania R. Yahya","email":"data:image/png;base64,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","orcid":"","institution":"Tanta University","correspondingAuthor":true,"prefix":"","firstName":"Rania","middleName":"R.","lastName":"Yahya","suffix":""},{"id":524164631,"identity":"d3d9a628-8504-4e79-9ed9-41be253ce746","order_by":1,"name":"AM Abd-Alla","email":"","orcid":"","institution":"Sohag University","correspondingAuthor":false,"prefix":"","firstName":"AM","middleName":"","lastName":"Abd-Alla","suffix":""}],"badges":[],"createdAt":"2025-09-10 22:08:06","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-7586193/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7586193/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":92891168,"identity":"eb5b58a5-40c1-49f9-ad3e-12aead5efe17","added_by":"auto","created_at":"2025-10-06 18:00:07","extension":"json","order_by":0,"title":"","display":"","copyAsset":false,"role":"acdc-reference","size":4274,"visible":true,"origin":"","legend":"","description":"","filename":"1d20c70d29234672b1382c66ebac0146.json","url":"https://assets-eu.researchsquare.com/files/rs-7586193/v1/2859c0c0252388be99d0a7b3.json"},{"id":93438145,"identity":"45f7592b-f19d-4cbf-b036-5f69ab6eb8a8","added_by":"auto","created_at":"2025-10-13 21:08:27","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1240765,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7586193/v1_covered_ee9d5ed4-3d6d-477c-bac2-ce24efa18bf4.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Propagation of Thermoelastic Waves for a Rotating Semiconductor Material Subjected to Laser Beam and Initial Stress Effect","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Plasma, Green and Naghdi’s model (III), relaxation times, semi- conductors, normal mode method","lastPublishedDoi":"10.21203/rs.3.rs-7586193/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7586193/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":" This study presents a novel photo-thermoelastic-mechanical framework for examining how waves move through elastic semiconductor materials.\n An elastic silicon (Si) medium is a half space, exposed to rotation, initial stress and laser pulse time photothermal excitation and thermal stress waves. The model incorporates the interaction between plasma and thermoelastic wave phenomena, analyzed within the framework of the Green and Naghdi's model type III of thermoelasticity theory. The proposed formulation is implemented for a semi- infinite half space domain. An eigenvalue approach analysis technique is employed to investigate their influence on the waves. Solving the two- dimensional problem involves employing the normal mode method. Fundamental physical parameters are determined based on mechanical stress, plasma conditions, thermal conditions. We obtain the field variables for a generic semi-conductor material in series form.\n We utilized MATLAB to plot the variation of physical variables, namely displacement components, the plasma distribution (the phase of carrier density), and temperature distribution with various parameters. \n The interaction between mechanical and thermal reactions is \nshown by graphic representations that show the changes in \ndisplacement and stress fields.\n These results offer important new information for the design of sophisticated engineering materials for thermoelastic \n applications as well as for the investigation of temperature, \n displacement, and stress.","manuscriptTitle":"Propagation of Thermoelastic Waves for a Rotating Semiconductor Material Subjected to Laser Beam and Initial Stress Effect","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-10-06 18:00:02","doi":"10.21203/rs.3.rs-7586193/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"ce0ef56c-0b72-4294-a4b0-5b7885e344b3","owner":[],"postedDate":"October 6th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":55713532,"name":"Physical sciences/Engineering"},{"id":55713533,"name":"Physical sciences/Materials science"},{"id":55713534,"name":"Physical sciences/Physics"}],"tags":[],"updatedAt":"2025-10-13T21:08:13+00:00","versionOfRecord":[],"versionCreatedAt":"2025-10-06 18:00:02","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7586193","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7586193","identity":"rs-7586193","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}