Effect of High-Pressure D2 and H2 Annealing on LFN Properties in FD-SOI pTFET

The effect of high-pressure deuterium annealing and hydrogen annealing on the electrical performance and the low-frequency noise properties in fully-depleted silicon-on-insulator p–type tunneling field-effect transistor (pTFET) was investigated. The electrical performance and the low-frequency noise properties were improved by high-pressure deuterium annealing. The typical noise power spectral density without high-pressure annealing exhibited two Lorentzian spectra, which were affected by one fast trap site and one slow trap site. The interface trap density related to the fast trap sites was reduced by using high-pressure deuterium and hydrogen annealing. Because the traps near the tunneling junction that contributed to the LFN were passivated using high-pressure deuterium and hydrogen annealing, high-pressure H 2 and D 2 annealing have the potential to be significant and necessary for future integrated tunneling field-effect transistor technology.