Design of Quantum-dot Semiconductor Optical Amplifiers With Near-zero Linewidth Enhancement Factor

Design of Quantum-dot Semiconductor Optical Amplifiers With Near-zero Linewidth Enhancement Factor | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Design of Quantum-dot Semiconductor Optical Amplifiers With Near-zero Linewidth Enhancement Factor Özüm Emre Aşırım, Christian Jirauschek This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4575113/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 16 Sep, 2024 Read the published version in Optical and Quantum Electronics → Version 1 posted 7 You are reading this latest preprint version Abstract The linewidth enhancement factor (LWEF) of a semiconductor optical amplifier (SOA) quantifies refractive index fluctuations in the gain medium, which induce phase distortion in the amplified optical signal. Optoelectronic systems employing SOAs with high LWEFs often exhibit poor device stability and beam coherence. Thus, designing SOAs with low LWEF is imperative. Recently, Quantum-Dot (QD) SOAs have emerged as a solution for LWEF suppression due to quantum-confinement effects enabling tunability of the QD carrier density and emission frequency. In this study, we aim to design a composite active region comprised of a host medium and the embodied QDs, to explore the corresponding LWEF variation and propose the ultimate design strategy to achieve near-zero LWEF in QD SOAs for enhancing device stability and beam coherence. Our approach entails modeling the refractive index of the composite active region using effective medium approximation via Maxwell-Garnett mixing formulation. We then extensively tune key SOA parameters, including QD carrier density, QD emission frequency, and the collision-time constant of the carriers to uncover the optimal configuration for minimizing the LWEF. Based on empirical values, we have developed and validated a simple yet effective algorithm that precisely simulates LWEF behavior in response to changes in key QD SOA parameters. This approach offers a straightforward model for estimating LWEF variation, and its corresponding minimization in QD SOAs without requiring complex experimental measurement techniques. Semiconductor optical amplifier Linewidth enhancement factor Quantum-Dot Semiconductor lasers Optical coherence Fourier domain mode locked lasers Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 16 Sep, 2024 Read the published version in Optical and Quantum Electronics → Version 1 posted Editorial decision: Revision requested 25 Jul, 2024 Reviews received at journal 18 Jul, 2024 Reviewers agreed at journal 26 Jun, 2024 Reviewers invited by journal 26 Jun, 2024 Editor assigned by journal 13 Jun, 2024 Submission checks completed at journal 13 Jun, 2024 First submitted to journal 13 Jun, 2024 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4575113","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":320221438,"identity":"274170e7-cf3c-47fc-bccc-fed5c849ce7d","order_by":0,"name":"Özüm Emre Aşırım","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAxElEQVRIiWNgGAWjYBADHgZmBsYHYOYBErQwGxwgRQsIsEkQpYWf/4zpBoaaOhnzdu606o9t2xj4jjfg1yLZcMbsBsOxwzwyh3m33TjYdptB8gwBawwO9gC1sB3gkWCGajG4kUBAy2EeoJZ/dWAtBWAt9x8Q0HIMqIWxjRmshQFiC34dDJI9bGU3EvsOg7Rsljhz7jaP5BkCDuPnP7ztxodvdfYS/Gc3fqgouy3Hd/wAAWtAANlYHiLUj4JRMApGwSggBACHo0OpOZL1ZwAAAABJRU5ErkJggg==","orcid":"","institution":"Technical University of Munich","correspondingAuthor":true,"prefix":"","firstName":"Özüm","middleName":"Emre","lastName":"Aşırım","suffix":""},{"id":320221439,"identity":"164e93b3-4cfa-462f-9721-eebc9d13950a","order_by":1,"name":"Christian Jirauschek","email":"","orcid":"","institution":"Technical University of Munich","correspondingAuthor":false,"prefix":"","firstName":"Christian","middleName":"","lastName":"Jirauschek","suffix":""}],"badges":[],"createdAt":"2024-06-13 09:31:09","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-4575113/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-4575113/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1007/s11082-024-07423-2","type":"published","date":"2024-09-16T15:57:51+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":65119301,"identity":"0b75fdb8-f5c7-4217-8d13-549e5a62e6a5","added_by":"auto","created_at":"2024-09-23 21:04:31","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":557539,"visible":true,"origin":"","legend":"","description":"","filename":"LWEFOFQDSOAs.pdf","url":"https://assets-eu.researchsquare.com/files/rs-4575113/v1_covered_429d3dc1-26e0-431a-a772-7c2aecb7040d.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"\u003cp\u003eDesign of Quantum-dot Semiconductor Optical Amplifiers With Near-zero Linewidth Enhancement Factor\u003c/p\u003e","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"optical-and-quantum-electronics","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"oqel","sideBox":"Learn more about [Optical and Quantum Electronics](https://www.springer.com/journal/11082)","snPcode":"11082","submissionUrl":"https://submission.nature.com/new-submission/11082/3","title":"Optical and Quantum Electronics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"Semiconductor optical amplifier, Linewidth enhancement factor, Quantum-Dot, Semiconductor lasers, Optical coherence, Fourier domain mode locked lasers","lastPublishedDoi":"10.21203/rs.3.rs-4575113/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-4575113/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"The linewidth enhancement factor (LWEF) of a semiconductor optical amplifier (SOA) quantifies refractive index fluctuations in the gain medium, which induce phase distortion in the amplified optical signal. Optoelectronic systems employing SOAs with high LWEFs often exhibit poor device stability and beam coherence. Thus, designing SOAs with low LWEF is imperative. Recently, Quantum-Dot (QD) SOAs have emerged as a solution for LWEF suppression due to quantum-confinement effects enabling tunability of the QD carrier density and emission frequency. In this study, we aim to design a composite active region comprised of a host medium and the embodied QDs, to explore the corresponding LWEF variation and propose the ultimate design strategy to achieve near-zero LWEF in QD SOAs for enhancing device stability and beam coherence. Our approach entails modeling the refractive index of the composite active region using effective medium approximation via Maxwell-Garnett mixing formulation. We then extensively tune key SOA parameters, including QD carrier density, QD emission frequency, and the collision-time constant of the carriers to uncover the optimal configuration for minimizing the LWEF. Based on empirical values, we have developed and validated a simple yet effective algorithm that precisely simulates LWEF behavior in response to changes in key QD SOA parameters. 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