Cross-Platform Experimental Validation of Multi-Stage Adaptive Gate Driving for MOSFET Switching Loss Reduction in Transformer Boost Circuits

Cross-Platform Experimental Validation of Multi-Stage Adaptive Gate Driving for MOSFET Switching Loss Reduction in Transformer Boost Circuits | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Cross-Platform Experimental Validation of Multi-Stage Adaptive Gate Driving for MOSFET Switching Loss Reduction in Transformer Boost Circuits Jiale CHENG, Yabin WANG, Zhongyu WANG, Hao SUN, Haibo ZHANG, Fang GUO This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-9439736/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 8 You are reading this latest preprint version Abstract In high step-up ratio converters for portable battery-powered devices, the switching loss of MOSFETs is a key issue that limits efficiency improvement and thermal management optimization. This paper proposes a thermal-measurement-based equivalent switching resistance ( \(\:{R}_{on-effective}\) ) characterization method to quantitatively evaluate the switching loss suppression effect of a multi-stage adaptive gate driver (MS-AGD) across different topology platforms. The MS-AGD identifies the Miller plateau in real time through differential detection and achieves four-stage adaptive gate current control by means of a cascode current mirror. To verify the cross-platform versatility of the proposed driver, this paper adapted it from the original silicon carbide (SiC) MOSFET flyback platform to a silicon (Si) MOSFET transformer-based boost converter platform, and comparative experiments were conducted at 15 frequency points (23.26–125 kHz) under a unified temperature-controlled environment (± 0.003 K). The experimental results show that the MS-AGD effectively reduces the temperature rise of the MOSFET at all frequency points, with an average temperature rise improvement of approximately 25% over the entire frequency range. The equivalent switching resistance extracted by the \(\:\zeta\:\) coefficient-based linear fitting method decreases from 1.459 Ω under the fixed gate resistor drive to 0.443 Ω under the MS-AGD drive, representing a reduction of approximately 70%. This result validates the loss suppression capability of the MS-AGD from a thermophysical perspective and confirms the applicability of the \(\:\zeta\:\) coefficient method as an evaluation tool for gate drive schemes. Physical sciences/Energy science and technology Physical sciences/Engineering Physical sciences/Physics adaptive gate drive equivalent switching resistance switching loss characterization cross-platform verification MOSFET thermal behavior Full Text Additional Declarations No competing interests reported. Supplementary Files CJLSM.docx Cite Share Download PDF Status: Under Review Version 1 posted Reviewers agreed at journal 06 May, 2026 Reviewers agreed at journal 04 May, 2026 Reviewers agreed at journal 04 May, 2026 Reviewers invited by journal 04 May, 2026 Editor invited by journal 21 Apr, 2026 Editor assigned by journal 17 Apr, 2026 Submission checks completed at journal 17 Apr, 2026 First submitted to journal 16 Apr, 2026 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-9439736","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":635726829,"identity":"69329938-961a-467c-abb8-98ccdb47e3c4","order_by":0,"name":"Jiale CHENG","email":"","orcid":"","institution":"Beijing Institute of Technology","correspondingAuthor":false,"prefix":"","firstName":"Jiale","middleName":"","lastName":"CHENG","suffix":""},{"id":635726830,"identity":"b082f22d-1d1f-406f-82ae-6d69a50cb2e6","order_by":1,"name":"Yabin WANG","email":"","orcid":"","institution":"Beijing Institute of 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equivalent switching resistance, switching loss characterization, cross-platform verification, MOSFET thermal behavior","lastPublishedDoi":"10.21203/rs.3.rs-9439736/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-9439736/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eIn high step-up ratio converters for portable battery-powered devices, the switching loss of MOSFETs is a key issue that limits efficiency improvement and thermal management optimization. This paper proposes a thermal-measurement-based equivalent switching resistance (\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:{R}_{on-effective}\\)\u003c/span\u003e\u003c/span\u003e) characterization method to quantitatively evaluate the switching loss suppression effect of a multi-stage adaptive gate driver (MS-AGD) across different topology platforms. The MS-AGD identifies the Miller plateau in real time through differential detection and achieves four-stage adaptive gate current control by means of a cascode current mirror. To verify the cross-platform versatility of the proposed driver, this paper adapted it from the original silicon carbide (SiC) MOSFET flyback platform to a silicon (Si) MOSFET transformer-based boost converter platform, and comparative experiments were conducted at 15 frequency points (23.26\u0026ndash;125 kHz) under a unified temperature-controlled environment (\u0026plusmn;\u0026thinsp;0.003 K). The experimental results show that the MS-AGD effectively reduces the temperature rise of the MOSFET at all frequency points, with an average temperature rise improvement of approximately 25% over the entire frequency range. The equivalent switching resistance extracted by the \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:\\zeta\\:\\)\u003c/span\u003e\u003c/span\u003e coefficient-based linear fitting method decreases from 1.459 Ω under the fixed gate resistor drive to 0.443 Ω under the MS-AGD drive, representing a reduction of approximately 70%. This result validates the loss suppression capability of the MS-AGD from a thermophysical perspective and confirms the applicability of the \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:\\zeta\\:\\)\u003c/span\u003e\u003c/span\u003e coefficient method as an evaluation tool for gate drive schemes.\u003c/p\u003e","manuscriptTitle":"Cross-Platform Experimental Validation of Multi-Stage Adaptive Gate Driving for MOSFET Switching Loss Reduction in Transformer Boost Circuits","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2026-05-12 05:32:47","doi":"10.21203/rs.3.rs-9439736/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"reviewerAgreed","content":"5855023710787133046216244435661354893","date":"2026-05-06T19:21:57+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"295513433643233774402456711179385002143","date":"2026-05-04T20:31:23+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"151883323059592264743681616150442221691","date":"2026-05-04T18:48:06+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2026-05-04T18:35:38+00:00","index":"","fulltext":""},{"type":"editorInvited","content":"","date":"2026-04-21T17:25:32+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2026-04-17T06:58:59+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2026-04-17T06:58:02+00:00","index":"","fulltext":""},{"type":"submitted","content":"Scientific Reports","date":"2026-04-16T14:48:27+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"scientific-reports","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scirep","sideBox":"Learn more about [Scientific Reports](http://www.nature.com/srep/)","snPcode":"","submissionUrl":"","title":"Scientific Reports","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Scientific Reports","inReviewEnabled":true,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"ce2fd1a1-3e56-4f1b-a688-7fb5f2d86d38","owner":[],"postedDate":"May 12th, 2026","published":true,"recentEditorialEvents":[{"type":"reviewerAgreed","content":"5855023710787133046216244435661354893","date":"2026-05-06T19:21:57+00:00","index":33,"fulltext":""},{"type":"reviewerAgreed","content":"295513433643233774402456711179385002143","date":"2026-05-04T20:31:23+00:00","index":31,"fulltext":""},{"type":"reviewerAgreed","content":"151883323059592264743681616150442221691","date":"2026-05-04T18:48:06+00:00","index":30,"fulltext":""},{"type":"reviewersInvited","content":"4","date":"2026-05-04T18:35:38+00:00","index":"","fulltext":""}],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[{"id":67662301,"name":"Physical sciences/Energy science and technology"},{"id":67662302,"name":"Physical sciences/Engineering"},{"id":67662303,"name":"Physical sciences/Physics"}],"tags":[],"updatedAt":"2026-05-12T05:32:47+00:00","versionOfRecord":[],"versionCreatedAt":"2026-05-12 05:32:47","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-9439736","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-9439736","identity":"rs-9439736","version":["v1"]},"buildId":"XKTyCvWXoU3ODBz1xrDgd","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}