Durability Evaluation of Antistatic Property in Ion-Implanted Materials

Durability Evaluation of Antistatic Property in Ion-Implanted Materials | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Durability Evaluation of Antistatic Property in Ion-Implanted Materials Minkyo Jeong, Jae Seok Lim, Bom Sok Kim, Myeong Jin Kim This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-8492033/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Ion implantation is a widely utilized technique for doping in semiconductor manufacturing, offering the distinct advantage of enabling mechanical and chemical surface modification while preserving the inherent bulk properties of the material. Due to these characteristics, ion implantation technology is applicable across various industrial sectors, including semiconductors, aerospace, and defense. By intentionally imparting electrical conductivity to the surfaces of insulators, it is possible to prevent electrostatic discharge (ESD) and mitigate damage to precision equipment. As the miniaturization of semiconductor processes accelerates, static electricity generated from ceramic and polymer insulator components has become a primary cause of product defects and degraded equipment reliability. While ionizers and carbon-additive materials are currently employed to alleviate these issues, they possess inherent limitations such as potential contamination and performance degradation under extreme environments. To address these challenges, RADPION Inc. has developed an ion-beam-based surface modification technology capable of directly imparting antistatic functionality to insulator surfaces, establishing a process that ensures stable surface conductivity without the risk of impurity incorporation. In semiconductor manufacturing, the use of metallic components is strictly limited to prevent metallic contamination. Consequently, ceramic (Al 2 O 3 ) and polymer (PTFE) materials, characterized by excellent thermal and chemical stability, are widely adopted for core components such as electrostatic chucks and wafer transport arms. However, these insulating materials are prone to accumulating surface charge during processing, and the resulting ESD phenomena serve as a major factor in device failure and reduced yield, making the implementation of effective antistatic technologies essential. In this study, a technology was implemented to simultaneously ensure antistatic functionality and environmental durability under harsh semiconductor process conditions by irradiating 50 kV nitrogen ion beams onto Al 2 O 3 and PTFE substrates to precisely control surface electrical conductivity. To verify the performance, several evaluations were conducted: reliability assessments based on temperature-dependent surface resistance measurements, thermal shock (temperature cycling) tests in accordance with the JEDEC JESD22-A104E:2014 standard, and Temperature-Humidity-Bias (THB) tests at 85°C and 85% RH. This research aims to enhance the functional stability of insulator materials through ion implantation and to establish a technical foundation for novel surface modification methods capable of ensuring reliability under diverse environmental conditions. Ion Implantation Electrostatic Discharge Prevention Functional Stability Thermal Shock Test Temperature and Humidity Test Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 I. INTRODUCTION Electrostatic Discharge (ESD) has emerged as a critical reliability issue in modern semiconductor manufacturing processes. Due to the miniaturization and increased integration of semiconductor devices, even subtle ESD phenomena can cause fatal damage to precision equipment and sensitive electronic components [ 1 , 2 ]. This, in turn, leads to reduced yields and hindered production stability [ 1 , 3 ]. While ceramic and polymer materials are widely used as primary components in semiconductor manufacturing equipment due to their excellent thermal and chemical resistance, their inherently high insulation properties make them susceptible to static accumulation and discharge in dry environments or plasma-based processes[ 4 ]. Various technologies have been applied to mitigate these electrostatic issues. Representative methods include ionizers, antistatic coatings, and carbon-based conductive additives. However, each of these approaches has its own limitations. Coating-based methods can suffer from issues such as contamination or delamination during high-temperature thermal shock or prolonged processing. Meanwhile, methods using conductive additives may compromise the inherent properties of the material or face degradation of conductive characteristics in high-temperature and high-humidity environments[ 5 ]. Therefore, there is a need to develop technologies that can stably control the electrical properties of insulator surfaces without contamination or performance degradation. Ion implantation is a widely utilized technique in semiconductor doping processes, offering the advantage of selectively modifying the mechanical, chemical, and electrical properties of materials by irradiating ions onto the surface. This technology allows for the transformation of only the microscopic regions near the surface while maintaining the bulk properties of the substrate[ 6 ]. However, systematic research regarding its reliability and long-term stability in extreme environments is still insufficient. In this study, an ion-beam-based surface modification process was developed to control the surface conductivity of insulating materials and enhance their functional stability. By irradiating 50 kV nitrogen ion beams onto ceramic (Al 2 O 3 ) and polymer (PTFE) substrates, surface resistances within the antistatic range (10 5 − 10 9 Ω ) were achieved, aiming to simultaneously secure antistatic functionality and environmental durability[ 7 ]. Furthermore, the electrical stability and reliability of the surface-modified materials were evaluated through temperature-dependent surface resistance measurements, thermal shock (Temperature Cycling) tests in accordance with the JEDEC JESD22-A104E:2014 standard, and Temperature-Humidity-Bias (THB) tests under 85°C and 85% RH conditions. This research aims to establish a foundation for a novel ion-implantation-based surface modification technology capable of ensuring both antistatic functionality and environmental resistance for insulating materials in high-reliability industries such as semiconductors, aerospace, and defense. II. EXPERIMENTS AND DISCUSSION In this study, 50 * 50 * 5 mm Al 2 O 3 (Alumina) and PTFE (Teflon) plates were utilized as specimens [Fig. 1 ]. To impart surface electrical conductivity, nitrogen (N) ions were irradiated using an ion implantation system developed by RADPION Inc. The ion implantation was conducted at an acceleration voltage of 50 kV with a dose of 1.0 * 10 17 ions/cm 2 to induce structural changes on the specimen surface, successfully achieving a sheet resistance of 10 7 Ω which is within the required antistatic range [Fig. 2 ]. For the XPS analysis aimed at observing chemical bonding changes and the depth distribution of implanted ions, a representative specimen with a dose of 2.5 * 10 15 ions/cm 2 at 50 kV was used to clearly identify the bonding mechanism during the initial stages of ion implantation[Fig. 3 ]. In reliability evaluations—such as thermal shock, temperature-dependent resistance, and Temperature-Humidity-Bias (THB) tests designed to simulate harsh semiconductor process environments—it is crucial to ensure a high-reliability surface layer that maintains antistatic functionality over the long term. Therefore, for these reliability tests, a dose of 1.0 * 10 17 ions/cm 2 was selected as the optimized process condition to maximize the density of conductive paths, enhance resistance to external thermal and chemical stresses, and secure the stable sheet resistance of 10 7 Ω required by end-users. To evaluate the electrical reliability of the ion-implanted specimens under varying temperatures, a system consisting of a high-temperature heating chamber and surface resistance measurement equipment was established. Surface resistance was measured using the 4-point probe method. For continuous measurements in high-temperature environments, a specially designed jig capable of withstanding temperatures exceeding 300°C was employed. The test conditions to verify the stability of sheet resistance according to temperature changes were as follows: After mounting the specimen on the dedicated jig within the heating chamber, measurement data were collected while increasing the temperature from room temperature up to 350°C. Starting from a low-temperature range of -15°C, the temperature was sequentially increased to the high-temperature range of 350°C in 50°C intervals, with real-time sheet resistance monitoring performed without removing the specimens from the chamber. The results of the temperature-dependent reliability test confirmed that the antistatic functionality remains effective even in high-temperature environments [Fig. 4 ]. As the temperature was raised from − 15°C to 350°C, the Al 2 O 3 specimen showed a gradual decrease in sheet resistance from 1.69 * 10 8 Ω / sq at -15°C to 6.83 * 10 5 Ω / sq at 300°C. The PTFE specimen also exhibited a slight downward trend, changing from 1.51 * 10 7 Ω / sq at -15°C to 1.49 * 10 6 Ω / sq at 300°C. However, at 350°C, the surface resistance of both specimens rose sharply, reaching 2.39 * 10 8 Ω / sq for Al 2 O 3 and 5.74 * 10 8 Ω / sq for PTFE. To evaluate the mechanical stress tolerance and electrical stability, a thermal shock test was performed in compliance with the JEDEC JESD22-A104E:2014 standard. As shown in [Table 1 ], Test Condition C of the standard was applied, consisting of cycles between a low-temperature extreme of -65°C and a high-temperature extreme of 150°C[ 8 ]. A total of 1,000 cycles were repeated, with a soak time of 30 minutes at each temperature extreme to apply sufficient thermal stress to the specimens. A thermal shock tester capable of rapid temperature control and surface resistance measurement equipment were used. The procedure involved measuring the initial surface resistance at room temperature as a baseline, followed by 1,000 cycles of thermal shock. After completion, the specimens were cooled to room temperature, and the post-test sheet resistance was measured. The total duration of this evaluation was 9 weeks, including 6 weeks for the thermal shock cycles and additional time for pre- and post-test measurements and data analysis. Following the 1,000 cycles, the sheet resistance of the Al 2 O 3 specimen changed from 1.94 * 10 7 Ω / sq to 5.83 * 10 7 Ω / sq, while the PTFE specimen changed from 2.88 * 10 7 Ω / sq to 1.89 * 10 7 Ω / sq [Fig. 5 ]. Finally, a Temperature-Humidity-Bias (THB) test was conducted to observe changes in electrical characteristics during prolonged exposure to high-temperature and high-humidity environments. The test conditions were set to 85°C and 85% R.H., which are harsh conditions typically used for the reliability evaluation of semiconductor devices[ 9 ]. The specimens were placed in a THB chamber and exposed for a total of 100 hours. The objective was to assess the impact of surface oxidation or chemical changes caused by moisture penetration on the sheet resistance of the ion-implanted layer. After the test, the surface condition was visually inspected for corrosion or delamination, and the final measured sheet resistance was compared with the initial data. Through this process, reliability data were secured regarding the long-term maintenance of antistatic functionality in high-temperature, high-humidity operational environments. After 100 hours of exposure at 85°C and 85% R.H., the sheet resistance of the Al 2 O 3 specimen remained stable, moving from 4.89 * 10 8 Ω / sq to 4.83 * 10 8 Ω / sq. Similarly, the PTFE specimen measured 1.32 * 10 7 Ω / sq compared to an initial 1.27 * 10 7 Ω / sq, proving that minimal electrical performance degradation occurs due to moisture exposure [Fig. 6 ]. Table 1 JESD22-A104E Test condition C Chamber system Dual chamber system Total cycles 1000 T s(min) / T s(max) Condition C : T s(min) = -65°C, T s(max) = 150°C Temperature tolerance T s(min) : − 10°C ~ + 5°C T s(max) : − 5°C ~ + 10°C Soak Time 25 min Cycles per hour 1 Cycle / hr Ramp Rate 160°C / min III. CONCLUSION The temperature-dependent reliability tests demonstrate that the sheet resistance remains stable within the effective antistatic range from − 15°C to 300°C. This behavior is attributed to the typical semiconductor-like Negative Temperature Coefficient (NTC) characteristics[ 10 ]. However, when the temperature was further increased to 350°C, a phenomenon of increasing surface resistance was observed. The primary cause of this resistance increase is structural deformation resulting from reaching the material's thermal threshold. Specifically, for the PTFE substrate, exceeding its melting point of approximately 327°C leads to a sharp increase in polymer chain mobility and a degradation of mechanical properties[ 11 ]. During this process, the surface conductive network formed by ion implantation is physically severed or structurally collapses, blocking electrical paths and causing a rapid rise in resistance. In the case of ceramic specimens such as Al 2 O 3 , the high temperature of 350°C can lead to micro-cracks caused by the difference in the coefficient of thermal expansion (CTE) between the ion-implanted surface layer and the bulk substrate[ 12 ]. Additionally, contact resistance between the measurement terminals and the specimen surface may become temporarily unstable due to thermal stress. Furthermore, heating at high temperatures in an atmospheric environment induces subtle surface oxidation, which serves as a factor hindering conductive pathways. Consequently, while the excellent reliability of ion implantation technology is confirmed up to 300°C, the extreme environment of 350°C and above is analyzed as a critical threshold region for antistatic performance due to phase changes and thermal degradation of the material itself. The mechanical stress tolerance and electrical stability of the Al 2 O 3 and PTFE materials modified by ion implantation were verified through thermal shock tests in accordance with the JEDEC JESD22-A104E standard. After repeating 1,000 cycles under harsh temperature environments ranging from − 65°C to 150°C, it was confirmed that both materials stably maintained the effective sheet resistance range required for antistatic functionality. For the Al 2 O 3 specimen, the sheet resistance changed from 1.94 * 10 7 Ω / sq before the test to 5.83 * 10 7 Ω / sq after the test, which remains well within the optimized range for antistatic protection. The PTFE specimen also exhibited stable electrical characteristics, changing from an initial 2.88 * 10 7 Ω / sq to 1.89 * 10 7 Ω / sq after the test. These results demonstrate that the surface conductive layer formed by the ion implantation process can maintain antistatic performance without structural failure, thanks to its excellent adhesion to the substrate even under physical stress caused by repeated thermal expansion and contraction. Furthermore, Temperature-Humidity-Bias (THB) tests (85°C, 85% R.H., 100 hours) were conducted to verify stability in high-temperature and high-humidity environments, confirming that electrical characteristics remained highly stable for both Al 2 O 3 and PTFE substrates. The sheet resistance of the Al 2 O 3 specimen was maintained between 4.89 * 10 8 Ω / sq and 4.83 * 10 8 Ω / sq, while the PTFE specimen measured 1.32 * 10 7 Ω / sq compared to an initial 1.27 * 10 7 Ω / sq, proving that minimal electrical performance degradation occurs due to moisture exposure. These findings indicate that the surface conductive layer formed through high-energy nitrogen ion implantation possesses high resistance to chemical degradation factors such as moisture penetration and surface oxidation. Consequently, this technology ensures superior environmental durability, capable of reliably maintaining antistatic functionality over the long term even in extreme process environments with high temperature and humidity. In conclusion, nitrogen ion implantation technology is an effective method for imparting highly reliable antistatic performance to insulating materials used in semiconductor process components, such as electrostatic chucks and wafer transport arms. This approach overcomes the delamination issues associated with conventional coating methods and holds significant value as a high-reliability surface treatment solution capable of ensuring a long service life even under severe thermal stress environments. Declarations ACKNOWLEDGEMENT Funding This work was supported by the Daejeon Metropolitan City Nano-convergence Field-demand-based Demonstration Support Project, supervised by the National NanoFab Center (NNFC). Acknowledgements The authors would like to thank the Korea Sensor Lab for providing the experimental facilities and technical support. References J. E. Vinson and J. J. Liou, Proc. IEEE 88 , 1878 (2000). Y. Yan, W. Lan, Y. Chen, D. Yang, Y. Zhou, Z. Zhu, and J. J. Liou, Adv. Electron. Mater. 8 , 2100886 (2022). A. J. Wallash and D. J. Hughbanks, Proc. SPIE 4695 , 307 (2002). K. S. Kumar and G. S. Gupta, Ceram. Int. 42 , 1085 (2016). J. G. Ganjehyan, J. Mater. Sci. 45 , 4212 (2010). J. F. Ziegler, M. D. Ziegler, and J. P. Biersack, Nucl. Instrum. Methods Phys. Res. B 268 , 1818 (2010). E. H. Lee, G. R. Rao, and L. K. Mansur, J. Mater. Res. 7 , 1900 (1992). JEDEC Standard No. 22-A104E, JEDEC Solid State Technology Association (2014). C. F. Dunn and J. W. McPherson, Proc. IEEE Int. Rel. Phys. Symp. 28 , 252 (1990). D. K. Das-Gupta, IEEE Trans. Dielectr. Electr. Insul. 4 , 149 (1997). S. Ebnesajjad, Fluoroplastics, Vol. 1: Non-Melt Processible Fluoroplastics (William Andrew Publishing, 2000). P. Townsend, Ion Implantation of Insulators (Springer, 1994). Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-8492033","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":581529801,"identity":"307f6e9d-e093-4e3c-932c-155898ae580e","order_by":0,"name":"Minkyo Jeong","email":"","orcid":"","institution":"Radpion Inc.","correspondingAuthor":false,"prefix":"","firstName":"Minkyo","middleName":"","lastName":"Jeong","suffix":""},{"id":581529805,"identity":"9cc88ea6-d13f-4fb1-9e86-1e530f57738e","order_by":1,"name":"Jae Seok Lim","email":"","orcid":"","institution":"Radpion 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15:00:24","extension":"png","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":143536,"visible":true,"origin":"","legend":"\u003cp\u003ePhotographs of ceramic and polymer specimens after ion implantation.\u003c/p\u003e","description":"","filename":"2.png","url":"https://assets-eu.researchsquare.com/files/rs-8492033/v1/31fdcee01c79eb15ac66fb9f.png"},{"id":101752331,"identity":"2b8bc362-1677-4a0b-b665-ea554cafa14b","added_by":"auto","created_at":"2026-02-03 10:26:51","extension":"png","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":17974,"visible":true,"origin":"","legend":"\u003cp\u003eXPS Depth profile in Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e\u003c/p\u003e","description":"","filename":"3.png","url":"https://assets-eu.researchsquare.com/files/rs-8492033/v1/efd0f6fdd93e9e51e8658f9a.png"},{"id":101509740,"identity":"36d5ff3c-310a-4a06-b5cd-dc4fc210731f","added_by":"auto","created_at":"2026-01-30 15:00:24","extension":"png","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":27443,"visible":true,"origin":"","legend":"\u003cp\u003eVariation in surface resistance during reliability testing.\u003c/p\u003e","description":"","filename":"4.png","url":"https://assets-eu.researchsquare.com/files/rs-8492033/v1/6f43434a0a87acc4f2a14f6b.png"},{"id":101509741,"identity":"f6a41813-0577-43bf-bfc8-b45f9fa7c0f9","added_by":"auto","created_at":"2026-01-30 15:00:24","extension":"png","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":21395,"visible":true,"origin":"","legend":"\u003cp\u003eChanges in surface resistance of specimens after the thermal shock test.\u003c/p\u003e","description":"","filename":"5.png","url":"https://assets-eu.researchsquare.com/files/rs-8492033/v1/bc43dbbd6813a1ad48fb4e98.png"},{"id":101509745,"identity":"f129f4d7-583e-43af-afa6-e72b5d66f34f","added_by":"auto","created_at":"2026-01-30 15:00:24","extension":"png","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":21804,"visible":true,"origin":"","legend":"\u003cp\u003eChanges in surface resistance of specimens after the Temperature-Humidity-Bias (THB) test.\u003c/p\u003e","description":"","filename":"6.png","url":"https://assets-eu.researchsquare.com/files/rs-8492033/v1/ba884b75d2d5871d8a3a4a10.png"},{"id":104307504,"identity":"5b86d59b-9733-4232-b04a-65ed437029a2","added_by":"auto","created_at":"2026-03-10 10:12:22","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":703068,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-8492033/v1/865799e4-929b-4e3e-b201-2a3245bad509.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Durability Evaluation of Antistatic Property in Ion-Implanted Materials","fulltext":[{"header":"I. INTRODUCTION","content":"\u003cp\u003eElectrostatic Discharge (ESD) has emerged as a critical reliability issue in modern semiconductor manufacturing processes. Due to the miniaturization and increased integration of semiconductor devices, even subtle ESD phenomena can cause fatal damage to precision equipment and sensitive electronic components [\u003cspan citationid=\"CR1\" class=\"CitationRef\"\u003e1\u003c/span\u003e, \u003cspan citationid=\"CR2\" class=\"CitationRef\"\u003e2\u003c/span\u003e]. This, in turn, leads to reduced yields and hindered production stability [\u003cspan citationid=\"CR1\" class=\"CitationRef\"\u003e1\u003c/span\u003e, \u003cspan citationid=\"CR3\" class=\"CitationRef\"\u003e3\u003c/span\u003e]. While ceramic and polymer materials are widely used as primary components in semiconductor manufacturing equipment due to their excellent thermal and chemical resistance, their inherently high insulation properties make them susceptible to static accumulation and discharge in dry environments or plasma-based processes[\u003cspan citationid=\"CR4\" class=\"CitationRef\"\u003e4\u003c/span\u003e]. Various technologies have been applied to mitigate these electrostatic issues. Representative methods include ionizers, antistatic coatings, and carbon-based conductive additives. However, each of these approaches has its own limitations. Coating-based methods can suffer from issues such as contamination or delamination during high-temperature thermal shock or prolonged processing. Meanwhile, methods using conductive additives may compromise the inherent properties of the material or face degradation of conductive characteristics in high-temperature and high-humidity environments[\u003cspan citationid=\"CR5\" class=\"CitationRef\"\u003e5\u003c/span\u003e]. Therefore, there is a need to develop technologies that can stably control the electrical properties of insulator surfaces without contamination or performance degradation.\u003c/p\u003e \u003cp\u003eIon implantation is a widely utilized technique in semiconductor doping processes, offering the advantage of selectively modifying the mechanical, chemical, and electrical properties of materials by irradiating ions onto the surface. This technology allows for the transformation of only the microscopic regions near the surface while maintaining the bulk properties of the substrate[\u003cspan citationid=\"CR6\" class=\"CitationRef\"\u003e6\u003c/span\u003e]. However, systematic research regarding its reliability and long-term stability in extreme environments is still insufficient. In this study, an ion-beam-based surface modification process was developed to control the surface conductivity of insulating materials and enhance their functional stability. By irradiating 50 kV nitrogen ion beams onto ceramic (Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e) and polymer (PTFE) substrates, surface resistances within the antistatic range (10\u003csup\u003e5\u003c/sup\u003e \u0026minus;\u0026thinsp;10\u003csup\u003e9\u003c/sup\u003e \u003cb\u003eΩ\u003c/b\u003e) were achieved, aiming to simultaneously secure antistatic functionality and environmental durability[\u003cspan citationid=\"CR7\" class=\"CitationRef\"\u003e7\u003c/span\u003e]. Furthermore, the electrical stability and reliability of the surface-modified materials were evaluated through temperature-dependent surface resistance measurements, thermal shock (Temperature Cycling) tests in accordance with the JEDEC JESD22-A104E:2014 standard, and Temperature-Humidity-Bias (THB) tests under 85\u0026deg;C and 85% RH conditions. This research aims to establish a foundation for a novel ion-implantation-based surface modification technology capable of ensuring both antistatic functionality and environmental resistance for insulating materials in high-reliability industries such as semiconductors, aerospace, and defense.\u003c/p\u003e"},{"header":"II. EXPERIMENTS AND DISCUSSION","content":"\u003cp\u003eIn this study, 50 * 50 * 5 mm Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e (Alumina) and PTFE (Teflon) plates were utilized as specimens [Fig. \u003cspan class=\"InternalRef\"\u003e1\u003c/span\u003e]. To impart surface electrical conductivity, nitrogen (N) ions were irradiated using an ion implantation system developed by RADPION Inc. The ion implantation was conducted at an acceleration voltage of 50 kV with a dose of 1.0 * 10\u003csup\u003e17\u003c/sup\u003e ions/cm\u003csup\u003e2\u003c/sup\u003e to induce structural changes on the specimen surface, successfully achieving a sheet resistance of 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ\u003c/strong\u003e which is within the required antistatic range [Fig. \u003cspan class=\"InternalRef\"\u003e2\u003c/span\u003e]. For the XPS analysis aimed at observing chemical bonding changes and the depth distribution of implanted ions, a representative specimen with a dose of 2.5 * 10\u003csup\u003e15\u003c/sup\u003e ions/cm\u003csup\u003e2\u003c/sup\u003e at 50 kV was used to clearly identify the bonding mechanism during the initial stages of ion implantation[Fig. \u003cspan class=\"InternalRef\"\u003e3\u003c/span\u003e]. In reliability evaluations\u0026mdash;such as thermal shock, temperature-dependent resistance, and Temperature-Humidity-Bias (THB) tests designed to simulate harsh semiconductor process environments\u0026mdash;it is crucial to ensure a high-reliability surface layer that maintains antistatic functionality over the long term. Therefore, for these reliability tests, a dose of 1.0 * 10\u003csup\u003e17\u003c/sup\u003e ions/cm\u003csup\u003e2\u003c/sup\u003e was selected as the optimized process condition to maximize the density of conductive paths, enhance resistance to external thermal and chemical stresses, and secure the stable sheet resistance of 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ\u003c/strong\u003e required by end-users. To evaluate the electrical reliability of the ion-implanted specimens under varying temperatures, a system consisting of a high-temperature heating chamber and surface resistance measurement equipment was established. Surface resistance was measured using the 4-point probe method. For continuous measurements in high-temperature environments, a specially designed jig capable of withstanding temperatures exceeding 300\u0026deg;C was employed. The test conditions to verify the stability of sheet resistance according to temperature changes were as follows: After mounting the specimen on the dedicated jig within the heating chamber, measurement data were collected while increasing the temperature from room temperature up to 350\u0026deg;C. Starting from a low-temperature range of -15\u0026deg;C, the temperature was sequentially increased to the high-temperature range of 350\u0026deg;C in 50\u0026deg;C intervals, with real-time sheet resistance monitoring performed without removing the specimens from the chamber. The results of the temperature-dependent reliability test confirmed that the antistatic functionality remains effective even in high-temperature environments [Fig. \u003cspan class=\"InternalRef\"\u003e4\u003c/span\u003e]. As the temperature was raised from \u0026minus;\u0026thinsp;15\u0026deg;C to 350\u0026deg;C, the Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e specimen showed a gradual decrease in sheet resistance from 1.69 * 10\u003csup\u003e8\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq at -15\u0026deg;C to 6.83 * 10\u003csup\u003e5\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq at 300\u0026deg;C. The PTFE specimen also exhibited a slight downward trend, changing from 1.51 * 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq at -15\u0026deg;C to 1.49 * 10\u003csup\u003e6\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq at 300\u0026deg;C. However, at 350\u0026deg;C, the surface resistance of both specimens rose sharply, reaching 2.39 * 10\u003csup\u003e8\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq for Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e and 5.74 * 10\u003csup\u003e8\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq for PTFE. To evaluate the mechanical stress tolerance and electrical stability, a thermal shock test was performed in compliance with the JEDEC JESD22-A104E:2014 standard. As shown in [Table \u003cspan class=\"InternalRef\"\u003e1\u003c/span\u003e], Test Condition C of the standard was applied, consisting of cycles between a low-temperature extreme of -65\u0026deg;C and a high-temperature extreme of 150\u0026deg;C[\u003cspan class=\"CitationRef\"\u003e8\u003c/span\u003e]. A total of 1,000 cycles were repeated, with a soak time of 30 minutes at each temperature extreme to apply sufficient thermal stress to the specimens. A thermal shock tester capable of rapid temperature control and surface resistance measurement equipment were used. The procedure involved measuring the initial surface resistance at room temperature as a baseline, followed by 1,000 cycles of thermal shock. After completion, the specimens were cooled to room temperature, and the post-test sheet resistance was measured. The total duration of this evaluation was 9 weeks, including 6 weeks for the thermal shock cycles and additional time for pre- and post-test measurements and data analysis. Following the 1,000 cycles, the sheet resistance of the Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e specimen changed from 1.94 * 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq to 5.83 * 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq, while the PTFE specimen changed from 2.88 * 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq to 1.89 * 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq [Fig. \u003cspan class=\"InternalRef\"\u003e5\u003c/span\u003e]. Finally, a Temperature-Humidity-Bias (THB) test was conducted to observe changes in electrical characteristics during prolonged exposure to high-temperature and high-humidity environments. The test conditions were set to 85\u0026deg;C and 85% R.H., which are harsh conditions typically used for the reliability evaluation of semiconductor devices[\u003cspan class=\"CitationRef\"\u003e9\u003c/span\u003e]. The specimens were placed in a THB chamber and exposed for a total of 100 hours. The objective was to assess the impact of surface oxidation or chemical changes caused by moisture penetration on the sheet resistance of the ion-implanted layer. After the test, the surface condition was visually inspected for corrosion or delamination, and the final measured sheet resistance was compared with the initial data. Through this process, reliability data were secured regarding the long-term maintenance of antistatic functionality in high-temperature, high-humidity operational environments. After 100 hours of exposure at 85\u0026deg;C and 85% R.H., the sheet resistance of the Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e specimen remained stable, moving from 4.89 * 10\u003csup\u003e8\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq to 4.83 * 10\u003csup\u003e8\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq. Similarly, the PTFE specimen measured 1.32 * 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq compared to an initial 1.27 * 10\u003csup\u003e7\u003c/sup\u003e \u003cstrong\u003eΩ /\u003c/strong\u003e sq, proving that minimal electrical performance degradation occurs due to moisture exposure [Fig. \u003cspan class=\"InternalRef\"\u003e6\u003c/span\u003e].\u003c/p\u003e\n\u003cdiv class=\"gridtable\"\u003e\u0026nbsp;\u003ctable id=\"Tab1\" border=\"1\"\u003e\n \u003ccaption language=\"En\"\u003e\n \u003cdiv class=\"CaptionNumber\"\u003eTable 1\u003c/div\u003e\n \u003cdiv class=\"CaptionContent\"\u003e\n \u003cp\u003eJESD22-A104E Test condition C\u003c/p\u003e\n \u003c/div\u003e\n \u003c/caption\u003e\n \u003ccolgroup cols=\"2\"\u003e\u003c/colgroup\u003e\n \u003cthead\u003e\n \u003ctr\u003e\n \u003cth align=\"left\"\u003e\n \u003cp\u003eChamber system\u003c/p\u003e\n \u003c/th\u003e\n \u003cth align=\"left\"\u003e\n \u003cp\u003eDual chamber system\u003c/p\u003e\n \u003c/th\u003e\n \u003c/tr\u003e\n \u003c/thead\u003e\n \u003ctbody\u003e\n \u003ctr\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003eTotal cycles\u003c/p\u003e\n \u003c/td\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003e1000\u003c/p\u003e\n \u003c/td\u003e\n \u003c/tr\u003e\n \u003ctr\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003eT\u003csub\u003es(min)\u003c/sub\u003e / T\u003csub\u003es(max)\u003c/sub\u003e\u003c/p\u003e\n \u003c/td\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003eCondition C : T\u003csub\u003es(min)\u003c/sub\u003e = -65\u0026deg;C, T\u003csub\u003es(max)\u003c/sub\u003e\u0026thinsp;=\u0026thinsp;150\u0026deg;C\u003c/p\u003e\n \u003c/td\u003e\n \u003c/tr\u003e\n \u003ctr\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003eTemperature tolerance\u003c/p\u003e\n \u003c/td\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003eT\u003csub\u003es(min)\u003c/sub\u003e : \u0026minus;\u0026thinsp;10\u0026deg;C\u0026thinsp;~\u0026thinsp;+\u0026thinsp;5\u0026deg;C\u003c/p\u003e\n \u003cp\u003eT\u003csub\u003es(max)\u003c/sub\u003e : \u0026minus;\u0026thinsp;5\u0026deg;C\u0026thinsp;~\u0026thinsp;+\u0026thinsp;10\u0026deg;C\u003c/p\u003e\n \u003c/td\u003e\n \u003c/tr\u003e\n \u003ctr\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003eSoak Time\u003c/p\u003e\n \u003c/td\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003e25 min\u003c/p\u003e\n \u003c/td\u003e\n \u003c/tr\u003e\n \u003ctr\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003eCycles per hour\u003c/p\u003e\n \u003c/td\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003e1 Cycle / hr\u003c/p\u003e\n \u003c/td\u003e\n \u003c/tr\u003e\n \u003ctr\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003eRamp Rate\u003c/p\u003e\n \u003c/td\u003e\n \u003ctd align=\"left\"\u003e\n \u003cp\u003e160\u0026deg;C / min\u003c/p\u003e\n \u003c/td\u003e\n \u003c/tr\u003e\n \u003c/tbody\u003e\n \u003c/table\u003e\n\u003c/div\u003e"},{"header":"III. CONCLUSION","content":"\u003cp\u003eThe temperature-dependent reliability tests demonstrate that the sheet resistance remains stable within the effective antistatic range from \u0026minus;\u0026thinsp;15\u0026deg;C to 300\u0026deg;C. This behavior is attributed to the typical semiconductor-like Negative Temperature Coefficient (NTC) characteristics[\u003cspan citationid=\"CR10\" class=\"CitationRef\"\u003e10\u003c/span\u003e]. However, when the temperature was further increased to 350\u0026deg;C, a phenomenon of increasing surface resistance was observed. The primary cause of this resistance increase is structural deformation resulting from reaching the material's thermal threshold. Specifically, for the PTFE substrate, exceeding its melting point of approximately 327\u0026deg;C leads to a sharp increase in polymer chain mobility and a degradation of mechanical properties[\u003cspan citationid=\"CR11\" class=\"CitationRef\"\u003e11\u003c/span\u003e]. During this process, the surface conductive network formed by ion implantation is physically severed or structurally collapses, blocking electrical paths and causing a rapid rise in resistance. In the case of ceramic specimens such as Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e, the high temperature of 350\u0026deg;C can lead to micro-cracks caused by the difference in the coefficient of thermal expansion (CTE) between the ion-implanted surface layer and the bulk substrate[\u003cspan citationid=\"CR12\" class=\"CitationRef\"\u003e12\u003c/span\u003e]. Additionally, contact resistance between the measurement terminals and the specimen surface may become temporarily unstable due to thermal stress. Furthermore, heating at high temperatures in an atmospheric environment induces subtle surface oxidation, which serves as a factor hindering conductive pathways. Consequently, while the excellent reliability of ion implantation technology is confirmed up to 300\u0026deg;C, the extreme environment of 350\u0026deg;C and above is analyzed as a critical threshold region for antistatic performance due to phase changes and thermal degradation of the material itself. The mechanical stress tolerance and electrical stability of the Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e and PTFE materials modified by ion implantation were verified through thermal shock tests in accordance with the JEDEC JESD22-A104E standard. After repeating 1,000 cycles under harsh temperature environments ranging from \u0026minus;\u0026thinsp;65\u0026deg;C to 150\u0026deg;C, it was confirmed that both materials stably maintained the effective sheet resistance range required for antistatic functionality. For the Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e specimen, the sheet resistance changed from 1.94 * 10\u003csup\u003e7\u003c/sup\u003e \u003cb\u003eΩ /\u003c/b\u003e sq before the test to 5.83 * 10\u003csup\u003e7\u003c/sup\u003e \u003cb\u003eΩ /\u003c/b\u003e sq after the test, which remains well within the optimized range for antistatic protection. The PTFE specimen also exhibited stable electrical characteristics, changing from an initial 2.88 * 10\u003csup\u003e7\u003c/sup\u003e \u003cb\u003eΩ /\u003c/b\u003e sq to 1.89 * 10\u003csup\u003e7\u003c/sup\u003e \u003cb\u003eΩ /\u003c/b\u003e sq after the test. These results demonstrate that the surface conductive layer formed by the ion implantation process can maintain antistatic performance without structural failure, thanks to its excellent adhesion to the substrate even under physical stress caused by repeated thermal expansion and contraction. Furthermore, Temperature-Humidity-Bias (THB) tests (85\u0026deg;C, 85% R.H., 100 hours) were conducted to verify stability in high-temperature and high-humidity environments, confirming that electrical characteristics remained highly stable for both Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e and PTFE substrates. The sheet resistance of the Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e specimen was maintained between 4.89 * 10\u003csup\u003e8\u003c/sup\u003e \u003cb\u003eΩ /\u003c/b\u003e sq and 4.83 * 10\u003csup\u003e8\u003c/sup\u003e \u003cb\u003eΩ /\u003c/b\u003e sq, while the PTFE specimen measured 1.32 * 10\u003csup\u003e7\u003c/sup\u003e \u003cb\u003eΩ /\u003c/b\u003e sq compared to an initial 1.27 * 10\u003csup\u003e7\u003c/sup\u003e \u003cb\u003eΩ /\u003c/b\u003e sq, proving that minimal electrical performance degradation occurs due to moisture exposure. These findings indicate that the surface conductive layer formed through high-energy nitrogen ion implantation possesses high resistance to chemical degradation factors such as moisture penetration and surface oxidation. Consequently, this technology ensures superior environmental durability, capable of reliably maintaining antistatic functionality over the long term even in extreme process environments with high temperature and humidity. In conclusion, nitrogen ion implantation technology is an effective method for imparting highly reliable antistatic performance to insulating materials used in semiconductor process components, such as electrostatic chucks and wafer transport arms. This approach overcomes the delamination issues associated with conventional coating methods and holds significant value as a high-reliability surface treatment solution capable of ensuring a long service life even under severe thermal stress environments.\u003c/p\u003e"},{"header":"Declarations","content":"\u003cp\u003eACKNOWLEDGEMENT\u0026nbsp;\u003c/p\u003e\n\u003cp\u003e\u003cstrong\u003eFunding\u003c/strong\u003e This work was supported by the Daejeon Metropolitan City Nano-convergence Field-demand-based Demonstration Support Project, supervised by the National NanoFab Center (NNFC).\u003c/p\u003e\n\u003cp\u003e\u003cstrong\u003eAcknowledgements\u003c/strong\u003e The authors would like to thank the \u003cstrong\u003eKorea Sensor Lab\u0026nbsp;\u003c/strong\u003efor providing the experimental facilities and technical support.\u003c/p\u003e"},{"header":"References","content":"\u003col\u003e\n\u003cli\u003eJ. E. Vinson and J. J. Liou, Proc. IEEE \u003cstrong\u003e88\u003c/strong\u003e, 1878 (2000).\u003c/li\u003e\n\u003cli\u003eY. Yan, W. Lan, Y. Chen, D. Yang, Y. Zhou, Z. Zhu, and J. J. Liou, Adv. Electron. Mater. \u003cstrong\u003e8\u003c/strong\u003e, 2100886 (2022).\u003c/li\u003e\n\u003cli\u003eA. J. Wallash and D. J. Hughbanks, Proc. SPIE \u003cstrong\u003e4695\u003c/strong\u003e, 307 (2002).\u003c/li\u003e\n\u003cli\u003eK. S. Kumar and G. S. Gupta, Ceram. Int. \u003cstrong\u003e42\u003c/strong\u003e, 1085 (2016).\u003c/li\u003e\n\u003cli\u003eJ. G. Ganjehyan, J. Mater. Sci. \u003cstrong\u003e45\u003c/strong\u003e, 4212 (2010).\u003c/li\u003e\n\u003cli\u003eJ. F. Ziegler, M. D. Ziegler, and J. P. Biersack, Nucl. Instrum. Methods Phys. Res. B \u003cstrong\u003e268\u003c/strong\u003e, 1818 (2010).\u003c/li\u003e\n\u003cli\u003eE. H. Lee, G. R. Rao, and L. K. Mansur, J. Mater. Res. \u003cstrong\u003e7\u003c/strong\u003e, 1900 (1992).\u003c/li\u003e\n\u003cli\u003eJEDEC Standard No. 22-A104E, JEDEC Solid State Technology Association (2014).\u003c/li\u003e\n\u003cli\u003eC. F. Dunn and J. W. McPherson, Proc. IEEE Int. Rel. Phys. Symp. \u003cstrong\u003e28\u003c/strong\u003e, 252 (1990).\u003c/li\u003e\n\u003cli\u003eD. K. Das-Gupta, IEEE Trans. Dielectr. Electr. Insul. \u003cstrong\u003e4\u003c/strong\u003e, 149 (1997).\u003c/li\u003e\n\u003cli\u003eS. Ebnesajjad, \u003cem\u003eFluoroplastics, Vol. 1: Non-Melt Processible Fluoroplastics\u003c/em\u003e (William Andrew Publishing, 2000).\u003c/li\u003e\n\u003cli\u003eP. Townsend, \u003cem\u003eIon Implantation of Insulators\u003c/em\u003e (Springer, 1994).\u003c/li\u003e\n\u003c/ol\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":true,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":false,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Ion Implantation, Electrostatic Discharge Prevention, Functional Stability, Thermal Shock Test, Temperature and Humidity Test","lastPublishedDoi":"10.21203/rs.3.rs-8492033/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-8492033/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eIon implantation is a widely utilized technique for doping in semiconductor manufacturing, offering the distinct advantage of enabling mechanical and chemical surface modification while preserving the inherent bulk properties of the material. Due to these characteristics, ion implantation technology is applicable across various industrial sectors, including semiconductors, aerospace, and defense. By intentionally imparting electrical conductivity to the surfaces of insulators, it is possible to prevent electrostatic discharge (ESD) and mitigate damage to precision equipment. As the miniaturization of semiconductor processes accelerates, static electricity generated from ceramic and polymer insulator components has become a primary cause of product defects and degraded equipment reliability. While ionizers and carbon-additive materials are currently employed to alleviate these issues, they possess inherent limitations such as potential contamination and performance degradation under extreme environments. To address these challenges, RADPION Inc. has developed an ion-beam-based surface modification technology capable of directly imparting antistatic functionality to insulator surfaces, establishing a process that ensures stable surface conductivity without the risk of impurity incorporation. In semiconductor manufacturing, the use of metallic components is strictly limited to prevent metallic contamination. Consequently, ceramic (Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e) and polymer (PTFE) materials, characterized by excellent thermal and chemical stability, are widely adopted for core components such as electrostatic chucks and wafer transport arms. However, these insulating materials are prone to accumulating surface charge during processing, and the resulting ESD phenomena serve as a major factor in device failure and reduced yield, making the implementation of effective antistatic technologies essential. In this study, a technology was implemented to simultaneously ensure antistatic functionality and environmental durability under harsh semiconductor process conditions by irradiating 50 kV nitrogen ion beams onto Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e and PTFE substrates to precisely control surface electrical conductivity. To verify the performance, several evaluations were conducted: reliability assessments based on temperature-dependent surface resistance measurements, thermal shock (temperature cycling) tests in accordance with the JEDEC JESD22-A104E:2014 standard, and Temperature-Humidity-Bias (THB) tests at 85\u0026deg;C and 85% RH. This research aims to enhance the functional stability of insulator materials through ion implantation and to establish a technical foundation for novel surface modification methods capable of ensuring reliability under diverse environmental conditions.\u003c/p\u003e","manuscriptTitle":"Durability Evaluation of Antistatic Property in Ion-Implanted Materials","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2026-01-30 15:00:19","doi":"10.21203/rs.3.rs-8492033/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"3ad5114f-a3e8-4de7-b45f-82267d927f13","owner":[],"postedDate":"January 30th, 2026","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2026-03-10T10:11:04+00:00","versionOfRecord":[],"versionCreatedAt":"2026-01-30 15:00:19","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-8492033","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-8492033","identity":"rs-8492033","version":["v1"]},"buildId":"XKTyCvWXoU3ODBz1xrDgd","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}