Thickness effect on electro-optical characteristics of MoS 2 /p-Si heterojunction devices fabricated by Aerosol Jet Printing

Thickness effect on electro-optical characteristics of MoS 2 /p-Si heterojunction devices fabricated by Aerosol Jet Printing | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Thickness effect on electro-optical characteristics of MoS 2 /p-Si heterojunction devices fabricated by Aerosol Jet Printing Meltem Donmez Kaya, Suleyman Ozcelik This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-2494423/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 14 Apr, 2023 Read the published version in Silicon → Version 1 posted 8 You are reading this latest preprint version Abstract The main aim of this article has to investigate some electro-optical properties of MoS 2 /p-Si heterojunctions fabricated by an innovative technique, AJP. For this purpose, MoS 2 thin films of different thicknesses were deposited on corning glass and p-type Si substrates by using RF magnetron sputtering. The structural, morphological and optical properties of MoS 2 films were analyzed by different characterization techniques. In addition, the electrical properties of heterojunction devices of MoS 2 /p-Si were examined by I-V measurements. Depending on the film thickness, localized states in the band gap region, which are explained by Urbach energy, electron-phonon interaction and steepness parameter analyses, were considered to be effective on device performance. It was observed that the fabricated MoS 2 /p-Si device with a thickness of 10 nm exhibited a higher rectification ratio and photovoltaic outputs. According to the obtained results, this study offers a new way to make better the performance of electro-optical devices based on MoS 2 . MoS2 heterojunction electrical characteristics Thickness dependence magnetron sputtering Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 14 Apr, 2023 Read the published version in Silicon → Version 1 posted Editorial decision: Major revision 09 Mar, 2023 Reviews received at journal 21 Feb, 2023 Reviewers agreed at journal 17 Feb, 2023 Reviewers agreed at journal 09 Feb, 2023 Reviewers invited by journal 25 Jan, 2023 Editor assigned by journal 25 Jan, 2023 Submission checks completed at journal 25 Jan, 2023 First submitted to journal 19 Jan, 2023 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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