Non-destructive characterization of B + ion implantation at host lattice sites and quantification of strain and its distribution in the n type Silicon by high resolution X-ray diffraction

Non-destructive characterization of B + ion implantation at host lattice sites and quantification of strain and its distribution in the n type Silicon by high resolution X-ray diffraction | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Non-destructive characterization of B + ion implantation at host lattice sites and quantification of strain and its distribution in the n type Silicon by high resolution X-ray diffraction Mahavir Singh, Anshu Goyal, Nanhey Singh, Brajesh Singh Yadav, and 2 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7269750/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract The paper studies the effect of boron implantation in silicon with change of implantation energy and its dose. Dynamic theory based high Resolution X-Ray Diffraction characterization was used for strain quantification (PPM) as well as to study the change in its nature (tensile to compressive strain) after annealing. The magnitude of strain was found to be increasing with implantation dopant concentration and was constant for any variation in implant energy. In given set of substrates the magnitude of the maximum strain was found to be about 230 PPM at 1e15 dose. Further, the R p estimated from strain profiling was verified by simulating the energy of implant by SRIM/TRIM software. The strain profiling findings of R p values corroborated well with those determined by the depth profiles of boron in the n-silicon using Secondary Ion Mass Spectrometry ( SIMS). Post annealing restoration of lattice order manifested as lowering of strain magnitude and change in its character from tensile to compressive (for small size dopants in comparison to host atom) give us a qualitative method to non-destructively probe the activation of dopants after annealing. Annealing Dopant activation Boron implantation oxide coated (100) n-silicon HR-XRD SIMS Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7269750","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":510880243,"identity":"f646c04f-b25e-4c1a-96a5-1213b92bf2a4","order_by":0,"name":"Mahavir Singh","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABCElEQVRIie2RMWvCQBSAnxzE5aVzSgv+gsKDg1OpkL+SIjiFInTJZAsBHV3jv3AS3FJuTenq5BIQQYdIpkKHvoQILkkdHe7j3vE47nu8ewdgMNwkyEEcolxMW8Tn82sVYXlXKBWVgtTY1tPs6zPH8RY6M1sfxjBxuwLz/WkKj90aRSWvwwekNyB9N3qOQL+sQ3vVX0wB+x81SuzTfUTe+1KgkgixR9peSUwAKa5Rvo/yhxXohKUycUnjrlnZ+MrJWAGNMkUQraVGkWLQpBxVr1C4uOJZFW+xVCsKnIbGfLnxfrmxeSJzDHhi7TDNMhq4dcolllP8KZUJOP/fZ0RW7HRODAaDwVDxB9MGTvI1ZorfAAAAAElFTkSuQmCC","orcid":"","institution":"Solid State Physics Laboratory","correspondingAuthor":true,"prefix":"","firstName":"Mahavir","middleName":"","lastName":"Singh","suffix":""},{"id":510880245,"identity":"51fab357-a307-44a9-a412-c98f82300c6e","order_by":1,"name":"Anshu Goyal","email":"","orcid":"","institution":"Solid State Physics Laboratory","correspondingAuthor":false,"prefix":"","firstName":"Anshu","middleName":"","lastName":"Goyal","suffix":""},{"id":510880247,"identity":"47cbfdcf-92ea-40e6-af2f-a6fa87872ed1","order_by":2,"name":"Nanhey Singh","email":"","orcid":"","institution":"Solid State Physics Laboratory","correspondingAuthor":false,"prefix":"","firstName":"Nanhey","middleName":"","lastName":"Singh","suffix":""},{"id":510880249,"identity":"71e532d0-cc4f-41bf-a352-c321b137a3f2","order_by":3,"name":"Brajesh Singh Yadav","email":"","orcid":"","institution":"Solid State Physics Laboratory","correspondingAuthor":false,"prefix":"","firstName":"Brajesh","middleName":"Singh","lastName":"Yadav","suffix":""},{"id":510880250,"identity":"1de8c55d-58c9-4675-9e86-f554b28514e9","order_by":4,"name":"Pritty Rao","email":"","orcid":"","institution":"Solid State Physics Laboratory","correspondingAuthor":false,"prefix":"","firstName":"Pritty","middleName":"","lastName":"Rao","suffix":""},{"id":510880251,"identity":"aed2115a-7f85-47b2-856a-2a8efcb228c3","order_by":5,"name":"O. 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Dynamic theory based high Resolution X-Ray Diffraction characterization was used for strain quantification (PPM) as well as to study the change in its nature (tensile to compressive strain) after annealing. The magnitude of strain was found to be increasing with implantation dopant concentration and was constant for any variation in implant energy. In given set of substrates the magnitude of the maximum strain was found to be about 230 PPM at 1e15 dose. Further, the R\u003csub\u003ep\u003c/sub\u003e estimated from strain profiling was verified by simulating the energy of implant by SRIM/TRIM software. The strain profiling findings of R\u003csub\u003ep\u003c/sub\u003e values corroborated well with those determined by the depth profiles of boron in the n-silicon using Secondary Ion Mass Spectrometry \u003cb\u003e(\u003c/b\u003eSIMS). Post annealing restoration of lattice order manifested as lowering of strain magnitude and change in its character from tensile to compressive (for small size dopants in comparison to host atom) give us a qualitative method to non-destructively probe the activation of dopants after annealing.\u003c/p\u003e","manuscriptTitle":"Non-destructive characterization of B + ion implantation at host lattice sites and quantification of strain and its distribution in the n type Silicon by high resolution X-ray diffraction","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-09-10 13:05:23","doi":"10.21203/rs.3.rs-7269750/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"db5ab600-0819-4099-8cd8-2f634ff4f187","owner":[],"postedDate":"September 10th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2025-10-31T06:23:33+00:00","versionOfRecord":[],"versionCreatedAt":"2025-09-10 13:05:23","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7269750","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7269750","identity":"rs-7269750","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}