Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation

Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation Monisha Ghosh, Shilpi Bhattacharya Deb, Dwaipayan Ghosh, Aritra Acharyya, and 3 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-3862866/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the Al x Ga 1− x N/GaN/Al x Ga 1− x N material system, with a fixed Aluminum mole fraction of x = 0.3. Two distinct MQW diode configurations, namely p + -n junction-based and Schottky barrier diode structures, are investigated for their THz potential. To enhance reverse breakdown characteristics, we employ mesa etching and nitrogen ion-implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al 0.3 Ga 0.7 N/GaN/Al 0.3 Ga 0.7 N MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise, improving overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and applications. AlGaN Edge-termination GaN IMPATT multi-quantum well Schottky barrier SDR terahertz Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-3862866","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":267461240,"identity":"77a646ad-9dc4-426f-bc9d-25e0a461e109","order_by":0,"name":"Monisha Ghosh","email":"","orcid":"","institution":"Supreme Knowledge Foundation Group of Institutions","correspondingAuthor":false,"prefix":"","firstName":"Monisha","middleName":"","lastName":"Ghosh","suffix":""},{"id":267461241,"identity":"ea999267-3415-4b5f-96d8-4c1f4771957f","order_by":1,"name":"Shilpi Bhattacharya Deb","email":"","orcid":"","institution":"Kalyani Government Engineering 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terahertz","lastPublishedDoi":"10.21203/rs.3.rs-3862866/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-3862866/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eIn our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the Al\u003csub\u003e\u003cem\u003ex\u003c/em\u003e\u003c/sub\u003eGa\u003csub\u003e1\u0026minus;\u003cem\u003ex\u003c/em\u003e\u003c/sub\u003eN/GaN/Al\u003csub\u003e\u003cem\u003ex\u003c/em\u003e\u003c/sub\u003eGa\u003csub\u003e1\u0026minus;\u003cem\u003ex\u003c/em\u003e\u003c/sub\u003eN material system, with a fixed Aluminum mole fraction of \u003cem\u003ex\u003c/em\u003e\u0026thinsp;=\u0026thinsp;0.3. Two distinct MQW diode configurations, namely \u003cem\u003ep\u003c/em\u003e\u003csup\u003e\u003cem\u003e+\u003c/em\u003e\u003c/sup\u003e\u003cem\u003e-n\u003c/em\u003e junction-based and Schottky barrier diode structures, are investigated for their THz potential. To enhance reverse breakdown characteristics, we employ mesa etching and nitrogen ion-implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al\u003csub\u003e0.3\u003c/sub\u003eGa\u003csub\u003e0.7\u003c/sub\u003eN/GaN/Al\u003csub\u003e0.3\u003c/sub\u003eGa\u003csub\u003e0.7\u003c/sub\u003eN MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise, improving overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and applications.\u003c/p\u003e","manuscriptTitle":"Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2024-01-18 16:38:11","doi":"10.21203/rs.3.rs-3862866/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"5efb4f14-ef7c-49da-b89f-cc2470258aef","owner":[],"postedDate":"January 18th, 2024","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2024-03-19T18:14:40+00:00","versionOfRecord":[],"versionCreatedAt":"2024-01-18 16:38:11","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-3862866","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-3862866","identity":"rs-3862866","version":["v1"]},"buildId":"qtupq5eGEP_6zYnWcrvyt","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}