High Performance Monolithic Integration of Light Amplifiers in Silicon Photonic Circuits | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article High Performance Monolithic Integration of Light Amplifiers in Silicon Photonic Circuits Ilias Skandalos, Yaonan Hou, Dun Qiao, Huiwen Deng, Xueying Yu, and 12 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7716086/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract Silicon photonics constitutes the cornerstone technology of on-chip optical interconnects. However, the seamless integration of gain elements with passive waveguides on silicon substrates remains a critical challenge. In this work, we demonstrate monolithically integrated III/V gain regions on a silicon wafer interfaced with silicon nitride waveguides exhibiting coupling losses below 1.5 dB and back-reflections close to -13 dB for a normal interface. Continuous-wave lasers with distributed Bragg reflectors were experimentally demonstrated with threshold currents below 215 mA at room temperature and a maximum fibre coupled power exceeding 2 mW. The first monolithically integrated electrically pumped optical amplifiers on silicon substrate are also demonstrated, with net gains greater than 5 dB and a 3-dB optical bandwidth of 46 nm. The proposed strategy effectively addresses the waveguide coupling bottleneck between III/V gain regions and silicon photonic circuits, establishing a scalable, monolithic and CMOS-compatible linked platform. This advance enables the cost-effective co-integration of positive net gain amplifiers and broadband passive components on silicon, paving the way for next-generation data centre interconnects. Physical sciences/Optics and photonics/Lasers, LEDs and light sources/Semiconductor lasers Scientific community and society/Business and industry/Technology Full Text Additional Declarations There is NO Competing Interest. Supplementary Files SupplementarySkandalosNPlaserSOASiN.pdf Supplementary Information: High Performance Monolithic Integration of Light Amplifiers in Silicon Photonic Circuits Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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