Fully transparent flexible 2D molybdenum disulfide transistors

Fully transparent flexible 2D molybdenum disulfide transistors | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Fully transparent flexible 2D molybdenum disulfide transistors Shenghuang Lin, Yang Li, Lejuan Cai, Nan Cui, Tinghe Yun, Bohan Wei, and 10 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4458942/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Transparent flexible field-effect transistors (FETs) are increasingly desired for cutting-edge electronics. However, the performance of flexible two-dimensional (2D) FETs still lag behind traditional rigid 2D devices, which is largely associated with the electrode contact and manufacture process involved. Organic conductive polymers, such as poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS), are promising electrode candidates due to their solution processability, tunable work function, transparency, and mechanical flexibility. Here, we introduce the lithographically defined PEDOT:PSS electrodes to fabricate the high-performance 2D transistors with excellent electrode/2D contact via a transfer method. Both flexible MoS2 FET and its rigid counterpart, employing PEDOT:PSS electrode, have demonstrated the impressive electron mobility values of 158 ± 26.7 cm2 V-1 s-1 and 155 ± 15.9 cm2 V-1 s-1, respectively. The PEDOT:PSS/MoS2 interface interaction has been meticulously characterized and computationally analyzed to elucidate the operational mechanisms. A fully transparent flexible 2D transistor, with 71% transmittance over the visible spectrum and robust FET performance under mechanical bending, is also demonstrated. Our work highlights the significant potential of integrating organic polymer electrodes with advanced 2D materials for novel high-performance device applications. Physical sciences/Materials science/Materials for devices/Electronic devices Physical sciences/Nanoscience and technology/Nanoscale devices/Electronic devices Full Text Additional Declarations There is NO Competing Interest. Supplementary Files SupplementaryInformation.docx Supplementary Information Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4458942","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":499263095,"identity":"d0b713d8-4ecc-4ba9-8e5b-1868eb5a7fbe","order_by":0,"name":"Shenghuang 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