Pressure-Tuned Ideal P-Type Schottky Contacts

Pressure-Tuned Ideal P-Type Schottky Contacts | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Pressure-Tuned Ideal P-Type Schottky Contacts Zhiping Xu, Zhaokuan Yu, Xuanyu Huang, Jinbo Bian, Yuqing He, and 2 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-3999016/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Contact engineering has been widely exploited in integrated circuits and functional devices for high performance and low power consumption. In this work, we develop an in-situ, reversible, and full-device-scale approach to tunable 2D van der Waals contacts. Ideal p-type Schottky contact free from dangling bonding and Fermi-level pinning are constructed at the structural superlubric graphite-MoS 2 interfaces. Electronic tunneling across the interface can then be activated by applying pressure beyond a threshold where a transition in the nature of electronic coupling occurs and further amplified at higher load. A record-high ideality factor approaching 1 and an off-state current of 10 -11 A were reported. We showcase a wearless Schottky generator operating at the 2D contact with an optimized exceptional overall efficiency of 50% in converting weak and random external stimuli into electricity. The device reaches a high current density of 31 A/m 2 and endures over 120,000 cycles, which can find applications in neuromorphic computing and mechanosensing. Physical sciences/Nanoscience and technology/Nanoscale devices/Electronic devices Physical sciences/Materials science/Materials for devices/Electronic devices Full Text Additional Declarations There is NO Competing Interest. Supplementary Files SIpresub.pdf Supplementary information materials Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-3999016","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":275568063,"identity":"2b48d5ea-3c08-4d7b-ae82-de36adc57e9e","order_by":0,"name":"Zhiping 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In this work, we develop an in-situ, reversible, and full-device-scale approach to tunable 2D van der Waals contacts. Ideal p-type Schottky contact free from dangling bonding and Fermi-level pinning are constructed at the structural superlubric graphite-MoS\u003csub\u003e2\u003c/sub\u003e interfaces. Electronic tunneling across the interface can then be activated by applying pressure beyond a threshold where a transition in the nature of electronic coupling occurs and further amplified at higher load. A record-high ideality factor approaching 1 and an off-state current of 10\u003csup\u003e-11\u003c/sup\u003e A were reported. We showcase a wearless Schottky generator operating at the 2D contact with an optimized exceptional overall efficiency of 50% in converting weak and random external stimuli into electricity. 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