Low-voltage dynamic light manipulation with silicon-organic slot metasurfaces

Abstract Active metasurfaces provide the opportunity for fast spatio-temporal control of light. Among various tuning methods, organic electro-optic materials provide some unique advantages due to their fast speed and large nonlinearity, along with the possibility of using fabrication techniques based on infiltration. In this letter, we report a silicon-organic platform where organic electro-optic material is infiltrated into the narrow gaps of slot-mode metasurfaces with high quality factors. The mode confinement into the slot enables the placement of metallic electrodes in close proximity, thus enabling tunability at lower voltages. We demonstrate a tuning sensitivity of 0.16nm/V at telecommunication wavelength. These results provide a path towards tunable silicon-organic hybrid metasurfaces at CMOS-level voltages.