Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

The paper describes the solar cell's design, ITO/CdS/Sb 2 Se 3 /CZTSe/Au. Experimental evidence that supports the model's predictions regarding output performance and current-voltage characteristics comes from CdS/Sb 2 Se 3 solar cells with a hole transport layer (HTL). Sb 2 Se 3 could be used in solar cells because it is non-toxic, affordable, and performs well. Because Sb 2 Se 3 has a high-power conversion efficiency (6.5%), it is utilized as the absorber in thin-film solar cells. By simulating a best-practice solar cell configuration, including device optimization and band offset engineering, the SCAPS-1D simulator increased solar cell efficiency. The J-V characteristics of the simulated systems were simulated using SCAPS-1D to confirm the accuracy of the results. Current research focuses on the absorber for antimony selenide photovoltaic solar cells. The solar capacitance simulator was used to evaluate thin Sb 2 Se 3 solar cells using SCAPS-1D software. From all the simulations, the conclusion arises that CZTSe as HTL gave the highest values of open-circuit voltage (V OC ), i.e., 311mV, short circuit current (J SC ), i.e., 28.246%, Fill Factor (FF), i.e., 45.48%, and Power Conversion Efficiency (PCE), i.e., 4%, was obtained through proposed solar cell architecture ITO/CdS/Sb 2 Se 3 /CZTSe/Au.