Analysis of GAA-NC-VTFET: Behavioral Study and Reduction of Short Channel Effects

2025 · doi:10.22541/au.174019875.55297088/v1
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The paper analyzes a gate-all-around negative capacitance vertical tunnel FET (GAA-NC-VTFET) using a heterojunction approach that incorporates negative capacitance HfO2 (NC-HfO2), with the goal of reducing short-channel effects for low-power operation. High-level device performance modeling reports steeper characteristics due to the negative capacitance polarization effect, specifically a lower point subthreshold slope of 18 mV/dec and leakage current on the order of 10^-14 A/µm. With a channel length of 18 nm, the authors report an enhanced ION/IOFF ratio around 10^10 and power consumption in the µW range, while explicitly noting that the article is a preprint and not peer reviewed (preliminary data). This paper does not explicitly discuss endometriosis or adenomyosis; it was included in the corpus via a keyword match in the upstream search index.

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Abstract

In this article, performance analysis of gate-all-around negative capacitance vertical tunnel FET (GAA-NC-VTFET) is proposed. The device creates a heterojunction design with negative capacitance HfO 2 (NC-HfO 2 ), and the presented structure is analyzed for the reduce of various short channel effect for minimal power applications. Because of the negative capacitance effect, the presented device shows steeper characteristics and is designed to lower the leakage current while maintaining a high I ON /I OFF ratio. The polarization effect of negative capacitance has provided better outcomes in terms of lower point subthreshold slope (SS) of 18 mV/dec and leakage current of the order of 10 -14 A/µm. An enhanced I ON / I OFF ratio of around 10 10 has been attained having a length of channel of 18 nm. Since I OFF value of the gadget is low, its power consumption is about µW, making it acceptable for low power applications.
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Abstract

In this article, performance analysis of gate-all-around negative capacitance vertical tunnel FET (GAA-NC-VTFET) is proposed. The device creates a heterojunction design with negative capacitance HfO 2 (NC-HfO 2 ), and the presented structure is analyzed for the reduce of various short channel effect for minimal power applications. Because of the negative capacitance effect, the presented device shows steeper characteristics and is designed to lower the leakage current while maintaining a high I ON /I OFF ratio. The polarization effect of negative capacitance has provided better outcomes in terms of lower point subthreshold slope (SS) of 18 mV/dec and leakage current of the order of 10 -14 A/µm. An enhanced I ON / I OFF ratio of around 10 10 has been attained having a length of channel of 18 nm. Since I OFF value of the gadget is low, its power consumption is about µW, making it acceptable for low power applications. Supplementary Material File (paper-1.docx) - Download - 234.03 KB Information & Authors Information Version history Peer review timeline Published International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Version of Record7 Aug 2025Published Copyright This work is licensed under a Non Exclusive No Reuse License. Collection

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Authors Metrics & Citations Metrics Article Usage 327views 159downloads Citations Download citation Vijay Kumar Ram, Tarun Chaudhary. Analysis of GAA-NC-VTFET: Behavioral Study and Reduction of Short Channel Effects. Authorea. 22 February 2025. DOI: https://doi.org/10.22541/au.174019875.55297088/v1 DOI: https://doi.org/10.22541/au.174019875.55297088/v1 If you have the appropriate software installed, you can download article citation data to the citation manager of your choice. Simply select your manager software from the list below and click Download. For more information or tips please see 'Downloading to a citation manager' in the Help menu.

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