Azide-functionalized Ligand Enabling Organic–Inorganic Hybrid Dielectric for High-Performance Solution-Processed Oxide Transistors

Abstract We propose a highly efficient crosslinking strategy for organic–inorganic hybrid dielectric layers using newly synthesized azide-functionalized acetyl acetonate, which covalently connect inorganic particles (ZrO2 NP) to polymers (PMMA), enabling highly efficient inter- and intra-crosslinking of organic and inorganic inclusions, resulting in a dense and defect-free thin-film morphology. From the optimized processing conditions, we obtained an excellent dielectric strength of over 4.0 MV/cm, a high dielectric constant of ~ 14, and a low surface energy of 38 mN/m. We demonstrated the fabrication of exceptionally high-performance, hysteresis-free n-type solution-processed oxide transistors comprising an In2O3/ZnO double layer as an active channel with an electron mobility of over 50 cm2V− 1s− 1, on/off ratio of ~ 107, subthreshold swing of 108 mV dec-1, and outstanding bias stability. From temperature-dependent I–V analyses combined with charge transport mechanism analyses, we demonstrated that the proposed hybrid dielectric layer provides percolation-limited charge transport for the In2O3/ZnO double layer under field-effect conditions.