Multi-level Memristors based on Two-dimensional Electron Gases in Oxide Heterostructures for High Precision Neuromorphic Computing

Abstract Memristors are essential elements for hardware implementation of artificial neural networks. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance limits the number of allowed states. Since actual data for neural network training inherently have a non-uniform distribution, the insufficient number of conductance states and the resultant inaccurate weight quantization may generate significant errors in the memristor-based computation. Herein, we demonstrate a multi-level memristor based on two-dimensional electron gas in a Pt/LaAlO3/SrTiO3 heterostructure. By redistributing oxygen vacancies, we precisely controlled the tunneling conductance of the device, achieving multiple conductance states (more than 27). The multi-level switching capability and the high retention performance allow us to implement a variance-aware weight quantization (VAQ), designed for improved computing accuracy. We verify that the VAQ provides greater accuracy in image classification process, as compared to conventional uniform quantization. These results provide valuable insight into developing high-precision multi-bit memristors for practical neuromorphic processors.