Onset of the Quantum Hall Effect at 5 mT in Double-Layer Graphene

Onset of the Quantum Hall Effect at 5 mT in Double-Layer Graphene | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Physical Sciences - Article Onset of the Quantum Hall Effect at 5 mT in Double-Layer Graphene Geliang Yu, Alexander S. Mayorov, Ping Wang, Xiaokai Yue, Biao Wu, and 15 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5729962/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 21 Jan, 2026 Read the published version in Nature Communications → Version 1 posted You are reading this latest preprint version Abstract For several decades, research has centered on electronic systems where an electron’s kinetic energy rivals its interaction energy. Although many systems have been proposed, none enable continuous tuning of key parameters, such as doping or work function. By contrast, graphene permits precise carrier density control via gating, but sample inhomogeneities hinder access to the low-density regime where electron-electron interactions dominate. Improving graphene’s carrier mobility remains essential for fundamental studies and device applications. Here, we describe a way to reduce the influence of external inhomogeneity by at least an order of magnitude in graphene, which immediately opens access to the numerous novel effects of this electronic system. This work uses a standard dry-transfer technique to fabricate a double-layer graphene (DLG) device, separated by an ultra-thin hexagonal boron nitride (hBN). The upper and lower graphene layers lie in opposite half-spaces, providing mutual screening that sufficiently reduces scattering from random Coulomb potentials. This architecture yields a residual charge density on the order of 2×10 8 cm -2 , previously achievable only in ultraclean suspended graphene, alongside unprecedented quantum mobility, reaching 5×10 6 cm 2 V -1 s -1 . Shubnikov–de Haas oscillations appear at magnetic fields as low as 2 mT, and well-defined integer quantum Hall features develop by 5 mT, highlighting exceptional carrier transport properties. Notably, a fractional Quantum Hall plateau at a filling factor ν tot = −8/3 emerges at 3 T, underscoring the device’s suitability for probing strongly correlated electronic phases in graphene-based heterostructures. Physical sciences/Materials science/Condensed-matter physics/Quantum Hall Physical sciences/Nanoscience and technology/Graphene/Electronic properties and devices Full Text Additional Declarations There is NO Competing Interest. Supplementary Files SIOnsetoftheQuantumHallEffectat5mTinDoubleLayerGraphenefinal.pdf Supplement Information of “Onset of the Quantum Hall Effect at 5 mT in Double-Layer Graphene” Cite Share Download PDF Status: Published Journal Publication published 21 Jan, 2026 Read the published version in Nature Communications → Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-5729962","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Physical Sciences - Article","associatedPublications":[],"authors":[{"id":403618268,"identity":"8f929f98-8e2f-4cdd-bf1e-2ce1cbdadbf3","order_by":0,"name":"Geliang Yu","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA6ElEQVRIiWNgGAWjYLCCBwZAgr2BAUQxNhClJQGklucASVpAhASYJEKLwY30iw8SCuzy5CPfHijmYbCR3XCA+dkD/Fpyig0SDJKLDW/nJRjzMKQZbzjAZm5AQEuaRIIBc+LG2TkGQC2HEzcc4GGTIKAl/UeCQX3ixplnQFr+E6Ml/RgwxA4nzpfgAWk5QFiL5Jk3zECHHU/cwJNjYDjHINl45mE2M7xa+I6nP/zw4U914vz2M2YGbyrsZPuONz/Dq0XhAA8keAwOMLAZgCOTGZ96IJBvYH8AZTAwPyCgeBSMglEwCkYoAAAqz0xufXXM1QAAAABJRU5ErkJggg==","orcid":"https://orcid.org/0000-0002-0169-7781","institution":"Nanjing University","correspondingAuthor":true,"prefix":"","firstName":"Geliang","middleName":"","lastName":"Yu","suffix":""},{"id":403618269,"identity":"697ec704-3d60-4e76-a2dd-06d8aaba9286","order_by":1,"name":"Alexander S. Mayorov","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Alexander","middleName":"S.","lastName":"Mayorov","suffix":""},{"id":403618270,"identity":"e52c3572-2e53-41db-9c20-d6575f26f9d3","order_by":2,"name":"Ping Wang","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Ping","middleName":"","lastName":"Wang","suffix":""},{"id":403618271,"identity":"9c3cc2f7-a152-4791-992f-bbcb7ee917d3","order_by":3,"name":"Xiaokai Yue","email":"","orcid":"","institution":"Sichuan Normal University","correspondingAuthor":false,"prefix":"","firstName":"Xiaokai","middleName":"","lastName":"Yue","suffix":""},{"id":403618272,"identity":"60450629-aec9-49dc-8d55-6fee294b63ce","order_by":4,"name":"Biao Wu","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Biao","middleName":"","lastName":"Wu","suffix":""},{"id":403618273,"identity":"3b756195-493a-499a-b03b-1c85a101a8a9","order_by":5,"name":"Jianhong He","email":"","orcid":"","institution":"Sichuan University","correspondingAuthor":false,"prefix":"","firstName":"Jianhong","middleName":"","lastName":"He","suffix":""},{"id":403618274,"identity":"8433f8d6-aec4-440f-849e-e3c0c3501295","order_by":6,"name":"Di Zhang","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Di","middleName":"","lastName":"Zhang","suffix":""},{"id":403618275,"identity":"d66b2a15-4789-42f7-9754-d2d95fcf9d09","order_by":7,"name":"Fuzhuo Lian","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Fuzhuo","middleName":"","lastName":"Lian","suffix":""},{"id":403618276,"identity":"43839835-6cd1-43bf-a5dd-15717d4d08ce","order_by":8,"name":"Siqi Jiang","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Siqi","middleName":"","lastName":"Jiang","suffix":""},{"id":403618277,"identity":"66762196-2fb8-4c6a-9a6d-343d5cc09460","order_by":9,"name":"Jiabei Huang","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Jiabei","middleName":"","lastName":"Huang","suffix":""},{"id":403618278,"identity":"18059997-73ba-45fc-8433-64b52f25fb14","order_by":10,"name":"Zihao Wang","email":"","orcid":"https://orcid.org/0000-0003-2169-1456","institution":"Institute for Functional Intelligent Materials, National University of Singapore, NUS, Singapore","correspondingAuthor":false,"prefix":"","firstName":"Zihao","middleName":"","lastName":"Wang","suffix":""},{"id":403618279,"identity":"06a8153f-0cbd-4164-93bb-996e62237e29","order_by":11,"name":"Qian Guo","email":"","orcid":"","institution":"University of Manchester","correspondingAuthor":false,"prefix":"","firstName":"Qian","middleName":"","lastName":"Guo","suffix":""},{"id":403618280,"identity":"f444a6f3-d58c-48f5-9574-2f12fbf9973b","order_by":12,"name":"Kenji Watanabe","email":"","orcid":"https://orcid.org/0000-0003-3701-8119","institution":"National Institute for Materials Science","correspondingAuthor":false,"prefix":"","firstName":"Kenji","middleName":"","lastName":"Watanabe","suffix":""},{"id":403618281,"identity":"cfb735ea-73d4-4861-8287-4c998a6bb88f","order_by":13,"name":"Takashi Taniguchi","email":"","orcid":"https://orcid.org/0000-0002-1467-3105","institution":"National Institute for Materials Science Tsukuba Ibaraki","correspondingAuthor":false,"prefix":"","firstName":"Takashi","middleName":"","lastName":"Taniguchi","suffix":""},{"id":403618282,"identity":"1be7959a-9774-4417-9bd3-721d906747c6","order_by":14,"name":"Renjun Du","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Renjun","middleName":"","lastName":"Du","suffix":""},{"id":403618283,"identity":"4a343fe0-9065-4e51-980a-d9d13e05fe9c","order_by":15,"name":"Rui Wang","email":"","orcid":"https://orcid.org/0000-0002-3636-1399","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Rui","middleName":"","lastName":"Wang","suffix":""},{"id":403618284,"identity":"d6686f72-6427-4e95-b950-2f22e20bbef1","order_by":16,"name":"Jie Gao","email":"","orcid":"","institution":"Sichuan University","correspondingAuthor":false,"prefix":"","firstName":"Jie","middleName":"","lastName":"Gao","suffix":""},{"id":403618285,"identity":"249fec09-ce86-433a-91e4-ad736ba907e7","order_by":17,"name":"Baigeng Wang","email":"","orcid":"https://orcid.org/0009-0006-0931-8527","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Baigeng","middleName":"","lastName":"Wang","suffix":""},{"id":403618286,"identity":"5c11de7a-c75f-4d6b-9009-b3163a9a8f80","order_by":18,"name":"Lei Wang","email":"","orcid":"","institution":"Nanjing University","correspondingAuthor":false,"prefix":"","firstName":"Lei","middleName":"","lastName":"Wang","suffix":""},{"id":403618287,"identity":"cc3c0183-c46d-4121-b482-148df13ca319","order_by":19,"name":"Kostya S. Novoselov","email":"","orcid":"https://orcid.org/0000-0003-4972-5371","institution":"National University of Singapore","correspondingAuthor":false,"prefix":"","firstName":"Kostya","middleName":"S.","lastName":"Novoselov","suffix":""}],"badges":[],"createdAt":"2024-12-29 12:45:09","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-5729962/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-5729962/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1038/s41467-026-68695-8","type":"published","date":"2026-01-21T05:00:00+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":103480971,"identity":"8d75c53b-878a-42e7-a527-4fdf1f2855cb","added_by":"auto","created_at":"2026-02-26 08:08:02","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":2257308,"visible":true,"origin":"","legend":"Article File","description":"","filename":"OnsetoftheQuantumHallEffectat5mTinDoubleLayerGraphenefinal.pdf","url":"https://assets-eu.researchsquare.com/files/rs-5729962/v1_covered_8e7d261d-5f95-45a3-a14e-e742e2f0b209.pdf"},{"id":79084368,"identity":"d0a29f5b-c9ef-4d34-850b-919ce0586df8","added_by":"auto","created_at":"2025-03-24 09:00:25","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"supplement","size":2736396,"visible":true,"origin":"","legend":"Supplement Information of \u0026#x201C;Onset of the Quantum Hall Effect at 5 mT in Double-Layer Graphene\u0026#x201D;","description":"","filename":"SIOnsetoftheQuantumHallEffectat5mTinDoubleLayerGraphenefinal.pdf","url":"https://assets-eu.researchsquare.com/files/rs-5729962/v1/d6bc7993d2890bed3da9b46d.pdf"}],"financialInterests":"There is \u003cb\u003eNO\u003c/b\u003e Competing Interest.","formattedTitle":"Onset of the Quantum Hall Effect at 5 mT in Double-Layer Graphene","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"nature-portfolio","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"","title":"Nature Portfolio","twitterHandle":"","acdcEnabled":false,"dfaEnabled":false,"editorialSystem":"ejp","reportingPortfolio":"","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-5729962/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-5729962/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"For several decades, research has centered on electronic systems where an electron’s kinetic energy rivals its interaction energy. Although many systems have been proposed, none enable continuous tuning of key parameters, such as doping or work function. By contrast, graphene permits precise carrier density control via gating, but sample inhomogeneities hinder access to the low-density regime where electron-electron interactions dominate. Improving graphene’s carrier mobility remains essential for fundamental studies and device applications. Here, we describe a way to reduce the influence of external inhomogeneity by at least an order of magnitude in graphene, which immediately opens access to the numerous novel effects of this electronic system. This work uses a standard dry-transfer technique to fabricate a double-layer graphene (DLG) device, separated by an ultra-thin hexagonal boron nitride (hBN). The upper and lower graphene layers lie in opposite half-spaces, providing mutual screening that sufficiently reduces scattering from random Coulomb potentials. This architecture yields a residual charge density on the order of 2×10\u003csup\u003e8\u003c/sup\u003e cm\u003csup\u003e-2\u003c/sup\u003e, previously achievable only in ultraclean suspended graphene, alongside unprecedented quantum mobility, reaching 5×10\u003csup\u003e6\u003c/sup\u003e cm\u003csup\u003e2\u003c/sup\u003eV\u003csup\u003e-1\u003c/sup\u003es\u003csup\u003e-1\u003c/sup\u003e. Shubnikov–de Haas oscillations appear at magnetic fields as low as 2 mT, and well-defined integer quantum Hall features develop by 5 mT, highlighting exceptional carrier transport properties. Notably, a fractional Quantum Hall plateau at a filling factor ν\u003csub\u003etot\u003c/sub\u003e= −8/3 emerges at 3 T, underscoring the device’s suitability for probing strongly correlated electronic phases in graphene-based heterostructures.","manuscriptTitle":"Onset of the Quantum Hall Effect at 5 mT in Double-Layer Graphene","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-03-24 09:00:20","doi":"10.21203/rs.3.rs-5729962/v1","editorialEvents":[],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"nature-communications","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"NCOMMS","sideBox":"Learn more about [Nature Communications](http://www.nature.com/ncomms/)","snPcode":"","submissionUrl":"https://mts-ncomms.nature.com/","title":"Nature Communications","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature Communications","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"1a79c8b4-3204-45d1-a274-195cd2256264","owner":[],"postedDate":"March 24th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"published-in-journal","subjectAreas":[{"id":43035806,"name":"Physical sciences/Materials science/Condensed-matter physics/Quantum Hall"},{"id":43035807,"name":"Physical sciences/Nanoscience and technology/Graphene/Electronic properties and devices"}],"tags":[],"updatedAt":"2026-02-26T08:07:57+00:00","versionOfRecord":{"articleIdentity":"rs-5729962","link":"https://doi.org/10.1038/s41467-026-68695-8","journal":{"identity":"nature-communications","isVorOnly":false,"title":"Nature Communications"},"publishedOn":"2026-01-21 05:00:00","publishedOnDateReadable":"January 21st, 2026"},"versionCreatedAt":"2025-03-24 09:00:20","video":"","vorDoi":"10.1038/s41467-026-68695-8","vorDoiUrl":"https://doi.org/10.1038/s41467-026-68695-8","workflowStages":[]},"version":"v1","identity":"rs-5729962","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-5729962","identity":"rs-5729962","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}