Insight into the Electrical Properties of TiN/Al2O3/p-Si High-K MIS Devices

Insight into the Electrical Properties of TiN/Al2O3/p-Si High-K MIS Devices | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Insight into the Electrical Properties of TiN/Al2O3/p-Si High-K MIS Devices Slah Hlali, Neila Hizem, Adel Kalboussi This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4314295/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract This research presents a study of the electrical characteristics C-V and I-V for the new MIS structure TiN/Al 2 O 3 /P-Si, simulated using Silvaco TCAD software. The analysis reveals the impact of various parameters such as frequency, temperature, oxide thickness, surface of the structure, and doping on the characteristics. The numerical simulations show good agreement with theoretical curves from literature, demonstrating proficiency in simulation techniques. The studies indicate that as temperature rises, there is a decrease in flat band voltage possibly due to reduced total charge density in the oxide and interface defect density. Notably, a weak inversion zone is observed at temperatures between 77 K and 300 K. Furthermore, frequency has a significant impact on the C-V characteristic at 1 GHz. Analysis of I-V reveals an asymmetry in temperature activation, suggesting the presence of two mechanisms of current conduction. The study also highlights that increasing doping values result in higher current density in the negative voltage regime, while simulated leakage currents for TiN/Al 2 O 3 /P-Si capacitors with varying dielectric thicknesses show higher current density for electron injection from the gate compared to the substrate due to band diagram asymmetry, leading to non-uniform leakage current behavior influenced by decreasing oxide thickness. High-K metal/insulator/semiconductor (MIS) Numerical Simulation C-V and I-V characteristics Al2O3/Si interface Full Text Additional Declarations The authors declare no competing interests. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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The analysis reveals the impact of various parameters such as frequency, temperature, oxide thickness, surface of the structure, and doping on the characteristics. The numerical simulations show good agreement with theoretical curves from literature, demonstrating proficiency in simulation techniques. The studies indicate that as temperature rises, there is a decrease in flat band voltage possibly due to reduced total charge density in the oxide and interface defect density. Notably, a weak inversion zone is observed at temperatures between 77 K and 300 K. Furthermore, frequency has a significant impact on the C-V characteristic at 1 GHz.\u003c/p\u003e \u003cp\u003eAnalysis of I-V reveals an asymmetry in temperature activation, suggesting the presence of two mechanisms of current conduction. The study also highlights that increasing doping values result in higher current density in the negative voltage regime, while simulated leakage currents for TiN/Al\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e/P-Si capacitors with varying dielectric thicknesses show higher current density for electron injection from the gate compared to the substrate due to band diagram asymmetry, leading to non-uniform leakage current behavior influenced by decreasing oxide thickness.\u003c/p\u003e","manuscriptTitle":"Insight into the Electrical Properties of TiN/Al2O3/p-Si High-K MIS Devices","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2024-04-25 05:39:07","doi":"10.21203/rs.3.rs-4314295/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"c1dc9e1e-898a-4a61-9c9e-9413fc71235e","owner":[],"postedDate":"April 25th, 2024","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2024-04-25T05:39:08+00:00","versionOfRecord":[],"versionCreatedAt":"2024-04-25 05:39:07","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-4314295","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-4314295","identity":"rs-4314295","version":["v1"]},"buildId":"qtupq5eGEP_6zYnWcrvyt","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}