Effects of Fitting Parameter on Device Performance and Reliability of Double-Gate n-FinFET by Using Bohm Quantum Potential (BQP) Model

Scaling of devices has been reached a brick wall due to short channel effects (SCEs) and quantum behavior of carriers. At this level, the quantum mechanics became more powerful than classical mechanics. In this paper,3-D Bohm Quantum Potential (BQP) model has been used to evaluate the electrical characteristic of n-FinFET at 300Kfor different high-k materials as gate dielectric. In this work, the numerical tool Silvaco’s Devedit has been used to simulate the device in 3-D.The sub-threshold swing (SS) is evaluated utilizing physics based modeling and numerical simulation, indicating strong dependency of SSon the fitting parameter (α), gate dielectric materials, and physical gate length of n-FinFET. The SS value down to 46.46 mV/decade is achieved using high gate dielectric constant (TiO2, k= 80). Here, drain induced barrier lowering (DIBL), transconductance, unity gain cut-off frequency (f T ), intrinsic gate delay, and off-state power dissipation etc. electrical parameters have been investigated.