Band Gap Formation and Semiconducting Properties of Graphene Adsorbed by Metal Oxide

The band gap research in graphene is still a very important topic for materials application. Here, we report a band gap opening and p-type semiconducting property of the graphene by using an electrochemical doping on graphene surface. The manganese-oxide nanopar-ticles adsorbed on the graphene were used as the dopants in an electrolyte, which induce the band gap opening and the change of electronic structure. In addition, the fabricated graphene FET shows the p-type semiconductor behaviors. The temperature dependent conductivity of the p-type doped graphene at applied potential of 1.5 V during electro-chemical doping shows the formation of band gap of 0.23 eV, which is obtained from the fitting of conductivity equation. The semiconducting properties of manganese-oxide doped graphene is attributed to the formation of manganese-oxide nanoparticle on the surface of graphene.