Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation

Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Regular papers Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation Xin Zhang, Liang Zhang, Sergey Mironov, Rongshi Xiao, Liang Guo, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-193694/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 21 Feb, 2021 Read the published version in Applied Physics A → Version 1 posted You are reading this latest preprint version Abstract Femtosecond laser has been widely utilized for modification of crystal structure to achieve desired functions. So far, however, the effect of crystallographic orientation on the induced structure by femtosecond laser processing has yet been comprehensively studied. The present work is undertaken in an attempt to fill this gap in our knowledge. To this end, commercial-purity Si is used as a target material and high-resolution transmission electron microscopy as well as electron backscatter diffraction are applied to examine the irradiation-induced microstructural changes. The structural response of the pulsed material is found to be principally influenced by the crystallographic orientation of the target surface. Specifically, at the surface orientation close to {111}, a pronounced amorphization effect is observed whereas no disordered material is detected at the orientations close to {100}. This phenomenon could be explained by the lowest crystallization speed required by the (111) surface due to its smallest surface energy. Compared with nanosecond laser, non-thermal melting induced by femtosecond laser induces mild thermal gradient and favors recrystallization. Computational Physics Electrophysics femtosecond laser crystallographic orientation amorphization silicon. Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Full Text Declarations Competing interests: The authors declare no competing interests. Cite Share Download PDF Status: Published Journal Publication published 21 Feb, 2021 Read the published version in Applied Physics A → Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-193694","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Regular papers","associatedPublications":[],"authors":[{"id":9916191,"identity":"704e8448-2644-48fc-93ba-72eebc434382","order_by":0,"name":"Xin Zhang","email":"","orcid":"","institution":"Beijing University of Technology","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Xin","middleName":"","lastName":"Zhang","suffix":""},{"id":9916192,"identity":"267fdfef-d8a0-4c68-981a-09173f195219","order_by":1,"name":"Liang Zhang","email":"","orcid":"","institution":"Southern University of Science and Technology","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Liang","middleName":"","lastName":"Zhang","suffix":""},{"id":9916193,"identity":"8193c889-a4a2-4ad3-9d32-7e2b0e3dbc52","order_by":2,"name":"Sergey Mironov","email":"","orcid":"","institution":"Beijing University of Technology","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Sergey","middleName":"","lastName":"Mironov","suffix":""},{"id":9916194,"identity":"7918a868-a79b-45a0-8a9f-ef03cde1f886","order_by":3,"name":"Rongshi Xiao","email":"","orcid":"","institution":"Beijing University of Technology","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Rongshi","middleName":"","lastName":"Xiao","suffix":""},{"id":9916195,"identity":"b40e3835-371e-470d-be51-0a26390c52ff","order_by":4,"name":"Liang Guo","email":"","orcid":"","institution":"Southern University of Science and Technology","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Liang","middleName":"","lastName":"Guo","suffix":""},{"id":9916196,"identity":"70be2838-c86c-4282-970f-943440e34b0f","order_by":5,"name":"Ting Huang","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA70lEQVRIiWNgGAWjYBACAwglwcDA3gPlHCBKSwJQC88ZICeBeC0gi3KgDEJazCWSnz38+sMiTz7y7YFi3h8Mcnw3Ehg/F+DRYjkjzdxYJkGi2PB2XoIxTwKDseSNBGbpGfgcdiPBTFoiQSJx4+wcA5CWxA03EtiYefBqSf8G0TLzDFhLPRFacswkPwC1zJfgAWtJMCCo5cybMmmGNInEDTx5CYZz0iQMZ5552CyNV8vx9G2SP2zqEue3nz1m8MbGRp7vePLBz/i0gADYGQYHGNgMwMmAgbGBgAagkh9AQr6BgfkBQaWjYBSMglEwIgEAmixKM6H00McAAAAASUVORK5CYII=","orcid":"https://orcid.org/0000-0001-7139-0614","institution":"Beijing University of Technology","correspondingAuthor":true,"submittingAuthor":false,"prefix":"","firstName":"Ting","middleName":"","lastName":"Huang","suffix":""}],"badges":[],"createdAt":"2021-01-31 11:38:56","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-193694/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-193694/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1007/s00339-021-04341-y","type":"published","date":"2021-02-21T19:10:14+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":5601868,"identity":"26820dbe-b702-46ce-b184-7e050be581dd","added_by":"auto","created_at":"2021-02-04 01:00:05","extension":"jpg","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":200373,"visible":true,"origin":"","legend":"SEM image (a), EBSD Kikuchi-band-contrast map (b), and EBSD crystallographic orientation map (c) showing anisotropic structural response to femtosecond laser irradiation. In (b), the inset is the magnified view of the laser-induced spot in the (111) surface. In (c), individual grains are colored according to their crystallographic orientation and the color code triangle is shown in the top right corner. Note: The data are taken from polycrystalline Si irradiated at laser peak-fluence of 0.99 J/cm2.","description":"","filename":"1.jpg","url":"https://assets-eu.researchsquare.com/files/rs-193694/v1/87c9a32aaaa3f7abbc0d2ff6.jpg"},{"id":5601777,"identity":"ced722f8-f5e7-4783-b190-7e5f8dc4ef6c","added_by":"auto","created_at":"2021-02-04 00:54:05","extension":"jpg","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":80077,"visible":true,"origin":"","legend":"SEM images and EBSD maps showing structural response of single-crystalline Si with the (111) surface to femtosecond laser peak-fluence of 0.29 J/cm2 (a), 0.57 J/cm2 (b), and 1.43 J/cm2 (c). TEM observation of the microstructure (0.57 J/cm2) in the amorphous-crystalline transition layer (zone D): low magnification (d) and high magnification (e). AFM image of the transition region between Zone C and Zone D, and the radial surface profile of the same region (0.57 J/cm2) (f). Note: in all the EBSD crystallographic orientation maps, regions are colored according to their crystallographic orientations and the color code triangle is given in the bottom right corner of (a).","description":"","filename":"2.jpg","url":"https://assets-eu.researchsquare.com/files/rs-193694/v1/7b3a8cd2eb7068b7993f2d3e.jpg"},{"id":5601869,"identity":"bfe5c5a6-ce91-4527-b9fd-b6df8b89f889","added_by":"auto","created_at":"2021-02-04 01:00:06","extension":"png","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":15938,"visible":true,"origin":"","legend":"Dependence of ablation area (Zone C) and amorphization area (Zone D) on laser peak-fluence. Note: The data were taken from single-crystalline Si with the (111) surface.","description":"","filename":"3.png","url":"https://assets-eu.researchsquare.com/files/rs-193694/v1/e36521cb155c5e71af4cf9b6.png"},{"id":5601827,"identity":"4ef5bfe2-5ea5-4237-93a5-123ad1013212","added_by":"auto","created_at":"2021-02-04 00:57:05","extension":"jpg","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":72581,"visible":true,"origin":"","legend":"SEM images and EBSD maps showing structural response of single-crystalline Si with the (100) surface to femtosecond laser peak-fluence of 0.29 J/cm2 (a), 0.57 J/cm2 (b), and 1.43 J/cm2 (c). TEM observation of the microstructure (0.57 J/cm2) at the spot center (d) and the spot edge (e). AFM image of the transition region between Zone C and Zone D, and the radial surface profile of the same region (0.57 J/cm2) (f). Note: in all the EBSD crystallographic orientation maps, regions are colored according to their crystallographic orientations and the color code triangle is given in the bottom right corner of (a).","description":"","filename":"4.jpg","url":"https://assets-eu.researchsquare.com/files/rs-193694/v1/3553e51ba56251d96e64666d.jpg"},{"id":5601830,"identity":"ae6ea37f-235c-4405-92a5-bf1c6ecd377a","added_by":"auto","created_at":"2021-02-04 00:57:06","extension":"jpg","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":33866,"visible":true,"origin":"","legend":"EBSD kernel-average-misorientation (KAM) map (a), and EBSD KAM profile (b) of the laser irradiated spot produced on the (111) surface. Note: The data were taken from polycrystalline Si irradiated at laser peak-fluence of 0.99 J/cm2. ","description":"","filename":"5.jpg","url":"https://assets-eu.researchsquare.com/files/rs-193694/v1/81e7634305b917419d85159b.jpg"},{"id":5601782,"identity":"54ccf89a-bc40-49ea-80f2-309063eefc81","added_by":"auto","created_at":"2021-02-04 00:54:06","extension":"jpg","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":30395,"visible":true,"origin":"","legend":"Calculated relation between the peak lattice temperature and laser fluence (a) and calculated relation between the peak carrier density and laser fluence (b).","description":"","filename":"6.jpg","url":"https://assets-eu.researchsquare.com/files/rs-193694/v1/d85bb9de25d4dcb27cf2567b.jpg"},{"id":13581271,"identity":"b7e15128-58ff-4ad0-b7ce-1b92066d8971","added_by":"auto","created_at":"2021-09-17 04:26:30","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1028767,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscripthuang20210124.pdf","url":"https://assets-eu.researchsquare.com/files/rs-193694/v1_covered.pdf"},{"id":5601903,"identity":"eb4b5fd5-dfe1-4e2a-8fc8-f119724ccb86","added_by":"auto","created_at":"2021-02-04 01:03:10","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":941526,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscripthuang20210124.pdf","url":"https://assets-eu.researchsquare.com/files/rs-193694/v1_stamped.pdf"}],"financialInterests":"","formattedTitle":"Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation","fulltext":[{"header":"Full Text","content":"\u003cp\u003eThis preprint is available for \u003ca href='/article/rs-193694/latest.pdf' target='_blank'\u003edownload as a PDF\u003c/a\u003e.\u003c/p\u003e"},{"header":"Declarations","content":"\u003cp\u003eCompeting interests: The authors declare no competing interests.\u003c/p\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"femtosecond laser, crystallographic orientation, amorphization, silicon.","lastPublishedDoi":"10.21203/rs.3.rs-193694/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-193694/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eFemtosecond laser has been widely utilized for modification of crystal structure to achieve desired functions. So far, however, the effect of crystallographic orientation on the induced structure by femtosecond laser processing has yet been comprehensively studied. The present work is undertaken in an attempt to fill this gap in our knowledge. To this end, commercial-purity Si is used as a target material and high-resolution transmission electron microscopy as well as electron backscatter diffraction are applied to examine the irradiation-induced microstructural changes. The structural response of the pulsed material is found to be principally influenced by the crystallographic orientation of the target surface. Specifically, at the surface orientation close to {111}, a pronounced amorphization effect is observed whereas no disordered material is detected at the orientations close to {100}. This phenomenon could be explained by the lowest crystallization speed required by the (111) surface due to its smallest surface energy. Compared with nanosecond laser, non-thermal melting induced by femtosecond laser induces mild thermal gradient and favors recrystallization.\u003c/p\u003e","manuscriptTitle":"Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2021-02-04 00:54:03","doi":"10.21203/rs.3.rs-193694/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"1437477e-0834-40ea-abee-8b7794fd79cf","owner":[],"postedDate":"February 4th, 2021","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":2232468,"name":"Computational Physics"},{"id":2232469,"name":"Electrophysics"}],"tags":[],"updatedAt":"2021-08-18T19:30:19+00:00","versionOfRecord":{"articleIdentity":"rs-193694","link":"https://doi.org/10.1007/s00339-021-04341-y","journal":{"identity":"applied-physics-a","isVorOnly":false,"title":"Applied Physics A"},"publishedOn":"2021-02-21 19:10:14","publishedOnDateReadable":"February 21st, 2021"},"versionCreatedAt":"2021-02-04 00:54:03","video":"","vorDoi":"10.1007/s00339-021-04341-y","vorDoiUrl":"https://doi.org/10.1007/s00339-021-04341-y","workflowStages":[]},"version":"v1","identity":"rs-193694","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-193694","identity":"rs-193694","version":["v1"]},"buildId":"FbvkV6FR0MCFSLy54lSbu","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}